Angle-dependent bandgap engineering in gated graphene superlattices
Graphene Superlattices (GSs) have attracted a lot of attention due to its peculiar properties as well as its possible technological implications. Among these characteristics we can mention: the extra Dirac points in the dispersion relation and the highly anisotropic propagation of the charge carrier...
| Autores: | , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2016 |
| País: | México |
| Institución: | Universidad Autónoma de Zacatecas |
| Repositorio: | Repositorio Institucional Caxcán |
| Idioma: | inglés |
| OAI Identifier: | oai:http://ricaxcan.uaz.edu.mx:20.500.11845/684 |
| Acceso en línea: | http://localhost/xmlui/handle/20.500.11845/684 https://doi.org/10.48779/54bg-c883 |
| Access Level: | acceso abierto |
| Palabra clave: | CIENCIAS FISICO MATEMATICAS Y CIENCIAS DE LA TIERRA [1] Graphene Superlattices (GSs) Transmission Gap (TG) Electrostatic GS (EGS) |
| Sumario: | Graphene Superlattices (GSs) have attracted a lot of attention due to its peculiar properties as well as its possible technological implications. Among these characteristics we can mention: the extra Dirac points in the dispersion relation and the highly anisotropic propagation of the charge carriers. However, despite the intense research that is carried out in GSs, so far there is no report about the angular dependence of the Transmission Gap (TG) in GSs. Here, we report the dependence of TG as a function of the angle of the incident Dirac electrons in a rather simple Electrostatic GS (EGS). Our results show that the angular dependence of the TG is intricate, since for moderated angles the dependence is parabolic, while for large angles an exponential dependence is registered. We also find that the TG can be modulated from meV to eV, by changing the structural parameters of the GS. These characteristics open the possibility for an angle-dependent bandgap engineering in graphene. |
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