Ion beam analysis of CH/Si layers deposited by ECR-CVD
We present in this study the characteristics of CH layers deposited on Si substrates using an electron cyclotron resonance (ECR) microwaveplasma source with different H2/CH4 mixtures. Quantification of the hydrogen and carbon content and the thickness of the films wasdetermined by Forward Elastic Sc...
| Autores: | , , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2007 |
| País: | México |
| Institución: | Universidad Nacional Autónoma de México |
| Repositorio: | Redalyc-UNAM |
| OAI Identifier: | oai:redalyc.org:57066315 |
| Acceso en línea: | https://www.redalyc.org/articulo.oa?id=57066315 https://www.redalyc.org/journal/570/57066315/ https://www.redalyc.org/journal/570/57066315/html/ https://www.redalyc.org/journal/570/57066315/57066315.epub https://www.redalyc.org/journal/570/57066315/movil |
| Access Level: | acceso abierto |
| Palabra clave: | Física, Astronomía y Matemáticas thin films IBA methods Plasma enhanced chemical vapor deposition |
| Sumario: | We present in this study the characteristics of CH layers deposited on Si substrates using an electron cyclotron resonance (ECR) microwaveplasma source with different H2/CH4 mixtures. Quantification of the hydrogen and carbon content and the thickness of the films wasdetermined by Forward Elastic Scattering with a 8.45 MeV 12C3+ beam. The oxygen concentration in the films was measure by NuclearReaction Analysis (NRA) using a 1.040 MeV deuterium. |
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