Photoconduction in silicon rich oxide films

Photoconduction of silicon rich oxide (SRO) thin films were studied by current-voltage (I-V) measurements, where ultraviolet (UV) and white (Vis) light illumination were applied. SRO thin films were deposited by low pressure chemical vapour deposition (LPCVD) technique, using SiH4 (silane) and N2O (...

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Autores: JORGE ALBERTO LUNA LOPEZ, MARIANO ACEVES MIJARES, ALFREDO MORALES SANCHEZ, JOSE FRANCISCO JAVIER FLORES GRACIA, GODOFREDO GARCIA SALGADO
Tipo de recurso: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:2009
País:México
Institución:Instituto Nacional de Astrofísica, Óptica y Electrónica
Repositorio:Repositorio Institucional del INAOE
Idioma:inglés
OAI Identifier:oai:inaoe.repositorioinstitucional.mx:1009/1269
Acceso en línea:http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1269
Access Level:acceso abierto
Palabra clave:info:eu-repo/classification/cti/1
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info:eu-repo/classification/cti/2203
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spelling Photoconduction in silicon rich oxide filmsJORGE ALBERTO LUNA LOPEZMARIANO ACEVES MIJARESALFREDO MORALES SANCHEZJOSE FRANCISCO JAVIER FLORES GRACIAGODOFREDO GARCIA SALGADOinfo:eu-repo/classification/cti/1info:eu-repo/classification/cti/22info:eu-repo/classification/cti/2203info:eu-repo/classification/cti/2203Photoconduction of silicon rich oxide (SRO) thin films were studied by current-voltage (I-V) measurements, where ultraviolet (UV) and white (Vis) light illumination were applied. SRO thin films were deposited by low pressure chemical vapour deposition (LPCVD) technique, using SiH4 (silane) and N2O (nitrous oxide) as reactive gases at 700 °. The gas flow ratio, Ro = [N2O]/[SiH4] was used to control the silicon excess. The thickness and refractive index of the SRO films were 72.0 nm, 75.5 nm, 59.1 nm, 73.4 nm and 1.7, 1.5, 1.46, 1.45, corresponding to Ro = 10, 20, 30 and 50, respectively. These results were obtained by null ellipsometry. Si nanoparticles (Si-nps) and defects within SRO films permit to obtain interesting photoelectric properties as a high photocurrent and photoconduction. These effects strongly depend on the silicon excess, thickness and structure type. Two different structures (Al/SRO/Si and Al/SRO/SRO/Si metal-oxide-semiconductor (MOS)-like structures) were fabricated and used as devices. The photocurrent in these structures is dominated by the generation of carriers due to the incident photon energies (~3.0-1.6 eV and 5 eV). These structures showed large photoconductive response at room temperature. Therefore, these structures have potential applications in optoelectronics devices.IOP Publishing2009info:eu-repo/semantics/articleinfo:eu-repo/semantics/acceptedVersionapplication/pdfhttp://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1269reponame:Repositorio Institucional del INAOEinstname:Instituto Nacional de Astrofísica, Óptica y Electrónicainstacron:INAOEengcitation:Luna-López, J.A., et al., (2009). Photoconduction in silicon rich oxide films, XIX Latin American Symposium on Solid State Physics (SLAFES XIX) Journal of Physics: Conference Series 167 (012017): 1-5info:eu-repo/semantics/openAccesshttp://creativecommons.org/licenses/by-nc-nd/4.0oai:inaoe.repositorioinstitucional.mx:1009/12692024-08-28T03:22:54Z
dc.title.none.fl_str_mv Photoconduction in silicon rich oxide films
title Photoconduction in silicon rich oxide films
spellingShingle Photoconduction in silicon rich oxide films
JORGE ALBERTO LUNA LOPEZ
info:eu-repo/classification/cti/1
info:eu-repo/classification/cti/22
info:eu-repo/classification/cti/2203
info:eu-repo/classification/cti/2203
title_short Photoconduction in silicon rich oxide films
title_full Photoconduction in silicon rich oxide films
title_fullStr Photoconduction in silicon rich oxide films
title_full_unstemmed Photoconduction in silicon rich oxide films
title_sort Photoconduction in silicon rich oxide films
dc.creator.none.fl_str_mv JORGE ALBERTO LUNA LOPEZ
MARIANO ACEVES MIJARES
ALFREDO MORALES SANCHEZ
JOSE FRANCISCO JAVIER FLORES GRACIA
GODOFREDO GARCIA SALGADO
author JORGE ALBERTO LUNA LOPEZ
author_facet JORGE ALBERTO LUNA LOPEZ
MARIANO ACEVES MIJARES
ALFREDO MORALES SANCHEZ
JOSE FRANCISCO JAVIER FLORES GRACIA
GODOFREDO GARCIA SALGADO
author_role author
author2 MARIANO ACEVES MIJARES
ALFREDO MORALES SANCHEZ
JOSE FRANCISCO JAVIER FLORES GRACIA
GODOFREDO GARCIA SALGADO
author2_role author
author
author
author
dc.subject.none.fl_str_mv info:eu-repo/classification/cti/1
info:eu-repo/classification/cti/22
info:eu-repo/classification/cti/2203
info:eu-repo/classification/cti/2203
topic info:eu-repo/classification/cti/1
info:eu-repo/classification/cti/22
info:eu-repo/classification/cti/2203
info:eu-repo/classification/cti/2203
description Photoconduction of silicon rich oxide (SRO) thin films were studied by current-voltage (I-V) measurements, where ultraviolet (UV) and white (Vis) light illumination were applied. SRO thin films were deposited by low pressure chemical vapour deposition (LPCVD) technique, using SiH4 (silane) and N2O (nitrous oxide) as reactive gases at 700 °. The gas flow ratio, Ro = [N2O]/[SiH4] was used to control the silicon excess. The thickness and refractive index of the SRO films were 72.0 nm, 75.5 nm, 59.1 nm, 73.4 nm and 1.7, 1.5, 1.46, 1.45, corresponding to Ro = 10, 20, 30 and 50, respectively. These results were obtained by null ellipsometry. Si nanoparticles (Si-nps) and defects within SRO films permit to obtain interesting photoelectric properties as a high photocurrent and photoconduction. These effects strongly depend on the silicon excess, thickness and structure type. Two different structures (Al/SRO/Si and Al/SRO/SRO/Si metal-oxide-semiconductor (MOS)-like structures) were fabricated and used as devices. The photocurrent in these structures is dominated by the generation of carriers due to the incident photon energies (~3.0-1.6 eV and 5 eV). These structures showed large photoconductive response at room temperature. Therefore, these structures have potential applications in optoelectronics devices.
publishDate 2009
dc.date.none.fl_str_mv 2009
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/acceptedVersion
format article
status_str acceptedVersion
dc.identifier.none.fl_str_mv http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1269
url http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1269
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv citation:Luna-López, J.A., et al., (2009). Photoconduction in silicon rich oxide films, XIX Latin American Symposium on Solid State Physics (SLAFES XIX) Journal of Physics: Conference Series 167 (012017): 1-5
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
http://creativecommons.org/licenses/by-nc-nd/4.0
eu_rights_str_mv openAccess
rights_invalid_str_mv http://creativecommons.org/licenses/by-nc-nd/4.0
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv IOP Publishing
publisher.none.fl_str_mv IOP Publishing
dc.source.none.fl_str_mv reponame:Repositorio Institucional del INAOE
instname:Instituto Nacional de Astrofísica, Óptica y Electrónica
instacron:INAOE
instname_str Instituto Nacional de Astrofísica, Óptica y Electrónica
instacron_str INAOE
institution INAOE
reponame_str Repositorio Institucional del INAOE
collection Repositorio Institucional del INAOE
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,812429

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