Electronic structure of (001) AlN/GaN quantum wells by means of a sp(3)sd(5) empirical tight-binding Hamiltonian
We have studied the electronic band structure of (0 0 1) AIN/GaN quantum wells by means of a sp(3)sd(5) empirical tight-binding Hamiltonian with nearest-neighbor interactions, including spin-orbit coupling and the effects of strain together with the surface Green function matching method. We have an...
| Autores: | , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2007 |
| País: | México |
| Institución: | Universidad Nacional Autónoma de México |
| Repositorio: | Sistema de Información de la Facultad de Ciencias, UNAM |
| OAI Identifier: | oai:repositorio.fciencias.unam.mx:11154/1192 |
| Acceso en línea: | http://hdl.handle.net/11154/1192 |
| Access Level: | acceso abierto |
| Palabra clave: | Chemistry, Physical Physics, Condensed Matter surfaces electron states |
| Sumario: | We have studied the electronic band structure of (0 0 1) AIN/GaN quantum wells by means of a sp(3)sd(5) empirical tight-binding Hamiltonian with nearest-neighbor interactions, including spin-orbit coupling and the effects of strain together with the surface Green function matching method. We have analyzed quantum wells with a thickness in the range 2 <= n <= 50, n being the number of principal layers of GaN in the well region. Results are presented for the (Gamma) over bar point and the Gamma K direction of the 2D Brillouin zone. The orbital character and the spatial localization of the different states have been also studied. (c) 2006 Elsevier B.V. All rights reserved. |
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