Desarrollo de modelos del memristor para aplicaciones en circuitos electrónicos
In this dissertation, analytical models for the memristor have been developed. The resulting models can be coded in the hardware description language VERILOG-A to be incorporated into HSPICE input files (netlist), or encoded in the description language in MATLAB, in order to carry out the simulation...
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| Tipo de recurso: | tesis de maestría |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 2018 |
| País: | México |
| Institución: | Instituto Nacional de Astrofísica, Óptica y Electrónica |
| Repositorio: | Repositorio Institucional del INAOE |
| Idioma: | español |
| OAI Identifier: | oai:inaoe.repositorioinstitucional.mx:1009/1335 |
| Acceso en línea: | http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1335 |
| Access Level: | acceso abierto |
| Palabra clave: | info:eu-repo/classification/Inspec/Memristor info:eu-repo/classification/Inspec/Chaos models info:eu-repo/classification/cti/1 info:eu-repo/classification/cti/22 info:eu-repo/classification/cti/2203 |
| Sumario: | In this dissertation, analytical models for the memristor have been developed. The resulting models can be coded in the hardware description language VERILOG-A to be incorporated into HSPICE input files (netlist), or encoded in the description language in MATLAB, in order to carry out the simulation of memristive circuits. We introduce three different models. The first one is a fully analytical model of the HP memristor that is recast in a family of harmonic time-dependent functions. The second model is also associated to the HP memristor and it consists in a constitutive branch relationship that relates the electric charge with the magnetic ux linkage. Special mention deserves the third model, because it comes from device that was actually fabricated at the facilities of the Department of Materials Science and Engineering, of the Federal University of ABC (UFABC), in Sao Paulo, Brazil. Measurements, characterization and the extracted model show excellent agreement. The main contribution of the research resides in the fact it has been demonstrated that analytical memristor models are suitable for the simulation of chaotic circuits. |
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