Effect of thermal processing on optical and electrical properties of copper selenide thin films
We report on the structural, optical and electrical properties of thin films of copper selenide obtained from chemical bath deposition and the changes brought about in these properties during thermal treatment at 200ºC 400ºC in air and vacuum. CuSe thin films deposited using N,N-dimethylselenourea...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 1999 |
| País: | México |
| Institución: | Universidad Nacional Autónoma de México |
| Repositorio: | Redalyc-UNAM |
| OAI Identifier: | oai:redalyc.org:94200956 |
| Acceso en línea: | https://www.redalyc.org/articulo.oa?id=94200956 |
| Access Level: | acceso abierto |
| Palabra clave: | Física, Astronomía y Matemáticas copper selenide films Chemical bath deposition |
| Sumario: | We report on the structural, optical and electrical properties of thin films of copper selenide obtained from chemical bath deposition and the changes brought about in these properties during thermal treatment at 200ºC 400ºC in air and vacuum. CuSe thin films deposited using N,N-dimethylselenourea transform to Cu2-xSe during vacuum annealing at 400ºC, where as, the composition of chemically deposited Cu1.85Se films obtained using sodium selenosulfate remains practically stable during such annealing. The high near infrared reflectance (30-80%) and low transmittance of the films are related to a high p-type electrical conductivity ~ (1-5)x103 W 1cm-1 of these films. A theoretical analysis of experimental transmittance and reflectance curves is made, based on free carrier optical absorption. Thermal processing of Cu2-xSe-In and CuSe-In films, with vacuum evaporated In film (20 40 nm) results in partial conversion of the films to CuxInySez. Applications of the films in automotive window coatings and photovoltaic conversion are suggested |
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