Design, fabrication, characterization and reliability study of CMOS-MEMS Lorentz-force magnetometers

This article presents several design techniques to fabricate micro-electro-mechanical systems (MEMS) using standard complementary metal-oxide semiconductor (CMOS) processes. They were applied to fabricate high yield CMOS-MEMS shielded Lorentz-force magnetometers (LFM). The multilayered metals and ox...

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Authors: Valle Fraga, Juan José, Sánchez Chiva, José María|||0000-0002-1101-6804, Fernández, Daniel, Madrenas Boadas, Jordi|||0000-0001-5905-9179
Format: article
Publication Date:2022
Country:España
Institution:Universitat Politècnica de Catalunya (UPC)
Repository:UPCommons. Portal del coneixement obert de la UPC
Language:English
OAI Identifier:oai:upcommons.upc.edu:2117/378948
Online Access:https://hdl.handle.net/2117/378948
https://dx.doi.org/10.1038/s41378-022-00423-w
Access Level:Open access
Keyword:Metal oxide semiconductors, Complementary
Digital electronics
Metall-òxid-semiconductors complementaris
Electrònica digital
Àrees temàtiques de la UPC::Enginyeria electrònica::Circuits electrònics
Àrees temàtiques de la UPC::Enginyeria electrònica::Components electrònics
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spelling Design, fabrication, characterization and reliability study of CMOS-MEMS Lorentz-force magnetometersValle Fraga, Juan JoséSánchez Chiva, José María|||0000-0002-1101-6804Fernández, DanielMadrenas Boadas, Jordi|||0000-0001-5905-9179Metal oxide semiconductors, ComplementaryDigital electronicsMetall-òxid-semiconductors complementarisElectrònica digitalÀrees temàtiques de la UPC::Enginyeria electrònica::Circuits electrònicsÀrees temàtiques de la UPC::Enginyeria electrònica::Components electrònicsThis article presents several design techniques to fabricate micro-electro-mechanical systems (MEMS) using standard complementary metal-oxide semiconductor (CMOS) processes. They were applied to fabricate high yield CMOS-MEMS shielded Lorentz-force magnetometers (LFM). The multilayered metals and oxides of the back-end-of-line (BEOL), normally used for electronic routing, comprise the structural part of the MEMS. The most important fabrication challenges, modeling approaches and design solutions are discussed. Equations that predict the Q factor, sensitivity, Brownian noise and resonant frequency as a function of temperature, gas pressure and design parameters are presented and validated in characterization tests. A number of the fabricated magnetometers were packaged into Quad Flat No-leads (QFN) packages. We show this process can achieve yields above 95¿% when the proper design techniques are adopted. Despite CMOS not being a process for MEMS manufacturing, estimated performance (sensitivity and noise level) is similar or superior to current commercial magnetometers and others built with MEMS processes. Additionally, typical offsets present in Lorentz-force magnetometers were prevented with a shielding electrode, whose efficiency is quantified. Finally, several reliability test results are presented, which demonstrate the robustness against high temperatures, magnetic fields and acceleration shocks.The authors would like to thank Laura Barrachina and Sandra Aguilar from Baolab Microsystems for assistance during the measurements. This work was supported by Baolab Microsystems and by the Spanish Ministry of Science, Innovation and Universities, the State Research Agency (AEI), and the European Social Fund (ESF) under project RTI2018-099766-B-I00.Peer Reviewed20222022-09-1620222022-12-20journal articlehttp://purl.org/coar/resource_type/c_6501VoRhttp://purl.org/coar/version/c_970fb48d4fbd8a85info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/2117/378948https://dx.doi.org/10.1038/s41378-022-00423-wreponame:UPCommons. Portal del coneixement obert de la UPCinstname:Universitat Politècnica de Catalunya (UPC)InglésengAgencia Estatal de Investigación http://doi.org/10.13039/501100011033 Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020 RTI2018-099766-B-I00 INTEGRACION DE CMOS-MEMS AVANZADOS PARA SISTEMAS DE NUEVA GENERACION A ESCALA MILIMETRICAopen accesshttp://purl.org/coar/access_right/c_abf2Attribution 4.0 Internationalhttps://creativecommons.org/licenses/by/4.0/info:eu-repo/semantics/openAccessoai:upcommons.upc.edu:2117/3789482026-05-27T15:37:01Z
dc.title.none.fl_str_mv Design, fabrication, characterization and reliability study of CMOS-MEMS Lorentz-force magnetometers
title Design, fabrication, characterization and reliability study of CMOS-MEMS Lorentz-force magnetometers
spellingShingle Design, fabrication, characterization and reliability study of CMOS-MEMS Lorentz-force magnetometers
Valle Fraga, Juan José
Metal oxide semiconductors, Complementary
Digital electronics
Metall-òxid-semiconductors complementaris
Electrònica digital
Àrees temàtiques de la UPC::Enginyeria electrònica::Circuits electrònics
Àrees temàtiques de la UPC::Enginyeria electrònica::Components electrònics
title_short Design, fabrication, characterization and reliability study of CMOS-MEMS Lorentz-force magnetometers
title_full Design, fabrication, characterization and reliability study of CMOS-MEMS Lorentz-force magnetometers
title_fullStr Design, fabrication, characterization and reliability study of CMOS-MEMS Lorentz-force magnetometers
title_full_unstemmed Design, fabrication, characterization and reliability study of CMOS-MEMS Lorentz-force magnetometers
title_sort Design, fabrication, characterization and reliability study of CMOS-MEMS Lorentz-force magnetometers
dc.creator.none.fl_str_mv Valle Fraga, Juan José
Sánchez Chiva, José María|||0000-0002-1101-6804
Fernández, Daniel
Madrenas Boadas, Jordi|||0000-0001-5905-9179
author Valle Fraga, Juan José
author_facet Valle Fraga, Juan José
Sánchez Chiva, José María|||0000-0002-1101-6804
Fernández, Daniel
Madrenas Boadas, Jordi|||0000-0001-5905-9179
author_role author
author2 Sánchez Chiva, José María|||0000-0002-1101-6804
Fernández, Daniel
Madrenas Boadas, Jordi|||0000-0001-5905-9179
author2_role author
author
author
dc.subject.none.fl_str_mv Metal oxide semiconductors, Complementary
Digital electronics
Metall-òxid-semiconductors complementaris
Electrònica digital
Àrees temàtiques de la UPC::Enginyeria electrònica::Circuits electrònics
Àrees temàtiques de la UPC::Enginyeria electrònica::Components electrònics
topic Metal oxide semiconductors, Complementary
Digital electronics
Metall-òxid-semiconductors complementaris
Electrònica digital
Àrees temàtiques de la UPC::Enginyeria electrònica::Circuits electrònics
Àrees temàtiques de la UPC::Enginyeria electrònica::Components electrònics
description This article presents several design techniques to fabricate micro-electro-mechanical systems (MEMS) using standard complementary metal-oxide semiconductor (CMOS) processes. They were applied to fabricate high yield CMOS-MEMS shielded Lorentz-force magnetometers (LFM). The multilayered metals and oxides of the back-end-of-line (BEOL), normally used for electronic routing, comprise the structural part of the MEMS. The most important fabrication challenges, modeling approaches and design solutions are discussed. Equations that predict the Q factor, sensitivity, Brownian noise and resonant frequency as a function of temperature, gas pressure and design parameters are presented and validated in characterization tests. A number of the fabricated magnetometers were packaged into Quad Flat No-leads (QFN) packages. We show this process can achieve yields above 95¿% when the proper design techniques are adopted. Despite CMOS not being a process for MEMS manufacturing, estimated performance (sensitivity and noise level) is similar or superior to current commercial magnetometers and others built with MEMS processes. Additionally, typical offsets present in Lorentz-force magnetometers were prevented with a shielding electrode, whose efficiency is quantified. Finally, several reliability test results are presented, which demonstrate the robustness against high temperatures, magnetic fields and acceleration shocks.
publishDate 2022
dc.date.none.fl_str_mv 2022
2022-09-16
2022
2022-12-20
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
VoR
http://purl.org/coar/version/c_970fb48d4fbd8a85
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/2117/378948
https://dx.doi.org/10.1038/s41378-022-00423-w
url https://hdl.handle.net/2117/378948
https://dx.doi.org/10.1038/s41378-022-00423-w
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.relation.none.fl_str_mv Agencia Estatal de Investigación http://doi.org/10.13039/501100011033 Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020 RTI2018-099766-B-I00 INTEGRACION DE CMOS-MEMS AVANZADOS PARA SISTEMAS DE NUEVA GENERACION A ESCALA MILIMETRICA
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
Attribution 4.0 International
https://creativecommons.org/licenses/by/4.0/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
Attribution 4.0 International
https://creativecommons.org/licenses/by/4.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:UPCommons. Portal del coneixement obert de la UPC
instname:Universitat Politècnica de Catalunya (UPC)
instname_str Universitat Politècnica de Catalunya (UPC)
reponame_str UPCommons. Portal del coneixement obert de la UPC
collection UPCommons. Portal del coneixement obert de la UPC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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