Design, fabrication, characterization and reliability study of CMOS-MEMS Lorentz-force magnetometers
This article presents several design techniques to fabricate micro-electro-mechanical systems (MEMS) using standard complementary metal-oxide semiconductor (CMOS) processes. They were applied to fabricate high yield CMOS-MEMS shielded Lorentz-force magnetometers (LFM). The multilayered metals and ox...
| Authors: | , , , |
|---|---|
| Format: | article |
| Publication Date: | 2022 |
| Country: | España |
| Institution: | Universitat Politècnica de Catalunya (UPC) |
| Repository: | UPCommons. Portal del coneixement obert de la UPC |
| Language: | English |
| OAI Identifier: | oai:upcommons.upc.edu:2117/378948 |
| Online Access: | https://hdl.handle.net/2117/378948 https://dx.doi.org/10.1038/s41378-022-00423-w |
| Access Level: | Open access |
| Keyword: | Metal oxide semiconductors, Complementary Digital electronics Metall-òxid-semiconductors complementaris Electrònica digital Àrees temàtiques de la UPC::Enginyeria electrònica::Circuits electrònics Àrees temàtiques de la UPC::Enginyeria electrònica::Components electrònics |
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Design, fabrication, characterization and reliability study of CMOS-MEMS Lorentz-force magnetometersValle Fraga, Juan JoséSánchez Chiva, José María|||0000-0002-1101-6804Fernández, DanielMadrenas Boadas, Jordi|||0000-0001-5905-9179Metal oxide semiconductors, ComplementaryDigital electronicsMetall-òxid-semiconductors complementarisElectrònica digitalÀrees temàtiques de la UPC::Enginyeria electrònica::Circuits electrònicsÀrees temàtiques de la UPC::Enginyeria electrònica::Components electrònicsThis article presents several design techniques to fabricate micro-electro-mechanical systems (MEMS) using standard complementary metal-oxide semiconductor (CMOS) processes. They were applied to fabricate high yield CMOS-MEMS shielded Lorentz-force magnetometers (LFM). The multilayered metals and oxides of the back-end-of-line (BEOL), normally used for electronic routing, comprise the structural part of the MEMS. The most important fabrication challenges, modeling approaches and design solutions are discussed. Equations that predict the Q factor, sensitivity, Brownian noise and resonant frequency as a function of temperature, gas pressure and design parameters are presented and validated in characterization tests. A number of the fabricated magnetometers were packaged into Quad Flat No-leads (QFN) packages. We show this process can achieve yields above 95¿% when the proper design techniques are adopted. Despite CMOS not being a process for MEMS manufacturing, estimated performance (sensitivity and noise level) is similar or superior to current commercial magnetometers and others built with MEMS processes. Additionally, typical offsets present in Lorentz-force magnetometers were prevented with a shielding electrode, whose efficiency is quantified. Finally, several reliability test results are presented, which demonstrate the robustness against high temperatures, magnetic fields and acceleration shocks.The authors would like to thank Laura Barrachina and Sandra Aguilar from Baolab Microsystems for assistance during the measurements. This work was supported by Baolab Microsystems and by the Spanish Ministry of Science, Innovation and Universities, the State Research Agency (AEI), and the European Social Fund (ESF) under project RTI2018-099766-B-I00.Peer Reviewed20222022-09-1620222022-12-20journal articlehttp://purl.org/coar/resource_type/c_6501VoRhttp://purl.org/coar/version/c_970fb48d4fbd8a85info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/2117/378948https://dx.doi.org/10.1038/s41378-022-00423-wreponame:UPCommons. Portal del coneixement obert de la UPCinstname:Universitat Politècnica de Catalunya (UPC)InglésengAgencia Estatal de Investigación http://doi.org/10.13039/501100011033 Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020 RTI2018-099766-B-I00 INTEGRACION DE CMOS-MEMS AVANZADOS PARA SISTEMAS DE NUEVA GENERACION A ESCALA MILIMETRICAopen accesshttp://purl.org/coar/access_right/c_abf2Attribution 4.0 Internationalhttps://creativecommons.org/licenses/by/4.0/info:eu-repo/semantics/openAccessoai:upcommons.upc.edu:2117/3789482026-05-27T15:37:01Z |
| dc.title.none.fl_str_mv |
Design, fabrication, characterization and reliability study of CMOS-MEMS Lorentz-force magnetometers |
| title |
Design, fabrication, characterization and reliability study of CMOS-MEMS Lorentz-force magnetometers |
| spellingShingle |
Design, fabrication, characterization and reliability study of CMOS-MEMS Lorentz-force magnetometers Valle Fraga, Juan José Metal oxide semiconductors, Complementary Digital electronics Metall-òxid-semiconductors complementaris Electrònica digital Àrees temàtiques de la UPC::Enginyeria electrònica::Circuits electrònics Àrees temàtiques de la UPC::Enginyeria electrònica::Components electrònics |
| title_short |
Design, fabrication, characterization and reliability study of CMOS-MEMS Lorentz-force magnetometers |
| title_full |
Design, fabrication, characterization and reliability study of CMOS-MEMS Lorentz-force magnetometers |
| title_fullStr |
Design, fabrication, characterization and reliability study of CMOS-MEMS Lorentz-force magnetometers |
| title_full_unstemmed |
Design, fabrication, characterization and reliability study of CMOS-MEMS Lorentz-force magnetometers |
| title_sort |
Design, fabrication, characterization and reliability study of CMOS-MEMS Lorentz-force magnetometers |
| dc.creator.none.fl_str_mv |
Valle Fraga, Juan José Sánchez Chiva, José María|||0000-0002-1101-6804 Fernández, Daniel Madrenas Boadas, Jordi|||0000-0001-5905-9179 |
| author |
Valle Fraga, Juan José |
| author_facet |
Valle Fraga, Juan José Sánchez Chiva, José María|||0000-0002-1101-6804 Fernández, Daniel Madrenas Boadas, Jordi|||0000-0001-5905-9179 |
| author_role |
author |
| author2 |
Sánchez Chiva, José María|||0000-0002-1101-6804 Fernández, Daniel Madrenas Boadas, Jordi|||0000-0001-5905-9179 |
| author2_role |
author author author |
| dc.subject.none.fl_str_mv |
Metal oxide semiconductors, Complementary Digital electronics Metall-òxid-semiconductors complementaris Electrònica digital Àrees temàtiques de la UPC::Enginyeria electrònica::Circuits electrònics Àrees temàtiques de la UPC::Enginyeria electrònica::Components electrònics |
| topic |
Metal oxide semiconductors, Complementary Digital electronics Metall-òxid-semiconductors complementaris Electrònica digital Àrees temàtiques de la UPC::Enginyeria electrònica::Circuits electrònics Àrees temàtiques de la UPC::Enginyeria electrònica::Components electrònics |
| description |
This article presents several design techniques to fabricate micro-electro-mechanical systems (MEMS) using standard complementary metal-oxide semiconductor (CMOS) processes. They were applied to fabricate high yield CMOS-MEMS shielded Lorentz-force magnetometers (LFM). The multilayered metals and oxides of the back-end-of-line (BEOL), normally used for electronic routing, comprise the structural part of the MEMS. The most important fabrication challenges, modeling approaches and design solutions are discussed. Equations that predict the Q factor, sensitivity, Brownian noise and resonant frequency as a function of temperature, gas pressure and design parameters are presented and validated in characterization tests. A number of the fabricated magnetometers were packaged into Quad Flat No-leads (QFN) packages. We show this process can achieve yields above 95¿% when the proper design techniques are adopted. Despite CMOS not being a process for MEMS manufacturing, estimated performance (sensitivity and noise level) is similar or superior to current commercial magnetometers and others built with MEMS processes. Additionally, typical offsets present in Lorentz-force magnetometers were prevented with a shielding electrode, whose efficiency is quantified. Finally, several reliability test results are presented, which demonstrate the robustness against high temperatures, magnetic fields and acceleration shocks. |
| publishDate |
2022 |
| dc.date.none.fl_str_mv |
2022 2022-09-16 2022 2022-12-20 |
| dc.type.none.fl_str_mv |
journal article http://purl.org/coar/resource_type/c_6501 VoR http://purl.org/coar/version/c_970fb48d4fbd8a85 |
| dc.type.openaire.fl_str_mv |
info:eu-repo/semantics/article |
| format |
article |
| dc.identifier.none.fl_str_mv |
https://hdl.handle.net/2117/378948 https://dx.doi.org/10.1038/s41378-022-00423-w |
| url |
https://hdl.handle.net/2117/378948 https://dx.doi.org/10.1038/s41378-022-00423-w |
| dc.language.none.fl_str_mv |
Inglés eng |
| language_invalid_str_mv |
Inglés |
| language |
eng |
| dc.relation.none.fl_str_mv |
Agencia Estatal de Investigación http://doi.org/10.13039/501100011033 Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020 RTI2018-099766-B-I00 INTEGRACION DE CMOS-MEMS AVANZADOS PARA SISTEMAS DE NUEVA GENERACION A ESCALA MILIMETRICA |
| dc.rights.none.fl_str_mv |
open access http://purl.org/coar/access_right/c_abf2 Attribution 4.0 International https://creativecommons.org/licenses/by/4.0/ |
| dc.rights.openaire.fl_str_mv |
info:eu-repo/semantics/openAccess |
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open access http://purl.org/coar/access_right/c_abf2 Attribution 4.0 International https://creativecommons.org/licenses/by/4.0/ |
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openAccess |
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application/pdf |
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reponame:UPCommons. Portal del coneixement obert de la UPC instname:Universitat Politècnica de Catalunya (UPC) |
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