Infrared thermal emission in macroporous silicon three-dimensional photonic crystals
In this paper we investigate the infrared thermal emission properties of macroporous silicon with modulated pore diameter. Samples with different pore modulation periodicities but fixed in-plane lattice constant are fabricated. Normal emission of these samples is measured between 373 and 673K673K. R...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2007 |
| País: | España |
| Institución: | Universitat Politècnica de Catalunya (UPC) |
| Repositorio: | UPCommons. Portal del coneixement obert de la UPC |
| Idioma: | inglés |
| OAI Identifier: | oai:upcommons.upc.edu:2117/118010 |
| Acceso en línea: | https://hdl.handle.net/2117/118010 https://dx.doi.org/10.1063/1.2804002 |
| Access Level: | acceso abierto |
| Palabra clave: | Silicon Photonic bandgap materials Emissivity Photonics Emission spectra Silici Àrees temàtiques de la UPC::Física::Física de l'estat sòlid::Semiconductors |
| Sumario: | In this paper we investigate the infrared thermal emission properties of macroporous silicon with modulated pore diameter. Samples with different pore modulation periodicities but fixed in-plane lattice constant are fabricated. Normal emission of these samples is measured between 373 and 673K673K. Room-temperature normal-incidence reflectance and transmission spectra are also measured and compared with the photonicband structure simulation. It is shown that thermal emission is suppressed due to photonic band gap effect along the pore axis in excellent agreement with the numerical calculations. |
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