Low-voltage polymer transistors on hydrophobic dielectrics and surfaces

A set of unique features, including large-area solution processing on flexible and stretchable substrates, make polymer semiconductors a promising material choice for a range of state-of-the-art applications in electronics, optoelectronics and sensing. Yet, an inherent weakness of polymer semiconduc...

Descripción completa

Detalles Bibliográficos
Autores: Kraft, Ulrike, Nikolka, Mark, Wang, Ging‐Ji Nathan, Kim, Yeongin, Pfattner, Raphael, Alsufyani, Maryam, McCulloch, Iain, Murmann, Boris, Bao, Zhenan
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2023
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/331366
Acceso en línea:http://hdl.handle.net/10261/331366
https://api.elsevier.com/content/abstract/scopus_id/85149658774
Access Level:acceso abierto
Palabra clave:Dielectric
OFET
Polymer transistor
Self-assembled monolayer
id ES_ff795c49d36e33d02aaaeb8655de6eb6
oai_identifier_str oai:digital.csic.es:10261/331366
network_acronym_str ES
network_name_str España
repository_id_str
spelling Low-voltage polymer transistors on hydrophobic dielectrics and surfacesKraft, UlrikeNikolka, MarkWang, Ging‐Ji NathanKim, YeonginPfattner, RaphaelAlsufyani, MaryamMcCulloch, IainMurmann, BorisBao, ZhenanDielectricOFETPolymer transistorSelf-assembled monolayerA set of unique features, including large-area solution processing on flexible and stretchable substrates, make polymer semiconductors a promising material choice for a range of state-of-the-art applications in electronics, optoelectronics and sensing. Yet, an inherent weakness of polymer semiconductors remains their low dielectric constants, increasing their susceptibility toward unscreened dipoles. These dipoles are particularly prevalent at polymer-dielectric interfaces with high-k dielectrics, which are essential for the operation of devices such as low-voltage field-effect transistors. This shortcoming can be addressed by using self-assembled monolayers (SAMs) to passivate surfaces that impact charge transport. However, SAM-treatment also increases the hydrophobicity of surfaces and therefore poses a challenge for subsequent solution processing steps and complex packaging of devices. Here, we report low-voltage polymer transistors processed by spin coating of the polymer semiconductors on highly hydrophobic SAM-treated aluminum and hafnium oxide dielectrics (contact angles >100) through fine-tuning of the interfacial tension at the polymer-dielectric interface. This approach enables the processing and detailed characterization of near-amorphous (indacenodithiophene-cobenzothiadiazole) as well as semicrystalline (poly(2,5-bis(2-octyldodecyl)-3,6-di(thiophen-2-yl)diketopyrrolo[3,4-c]pyrrole-1,4-dione-alt-thieno[3,2-b]thiophen)) polymer semiconductors. We demonstrate polymer transistors that exhibit high on-currents and field-independent, charge carrier mobilities of 0.8 cm2 V−1s−1 at low operating voltages (<3 V).U. K. acknowledges funding from the Alexander von Humboldt foundation (Feodor Lynen Research Fellowship). M.N. acknowledges financial support from the European Commission through a Marie-Curie Individual Fellowship (EC Grant Agreement Number: 747461).With funding from the Spanish government through the ‘Severo Ochoa Centre of Excellence’ accreditation (CEX2019-000917-S).Peer reviewedInstitute of Physics PublishingAlexander von Humboldt FoundationEuropean CommissionAgencia Estatal de Investigación (España)Kraft, Ulrike [0000-0002-2104-9706]Pfattner, Raphael [0000-0002-7232-1845]Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]202320232023info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Publisher's versioninfo:eu-repo/semantics/publishedVersionhttp://hdl.handle.net/10261/331366https://api.elsevier.com/content/abstract/scopus_id/85149658774reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Inglés#PLACEHOLDER_PARENT_METADATA_VALUE#info:eu-repo/grantAgreement/EC/H2020/747461JPhys Materialshttp://doi.org/10.1088/2515-7639/acb7a1Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/3313662026-05-22T06:33:51Z
dc.title.none.fl_str_mv Low-voltage polymer transistors on hydrophobic dielectrics and surfaces
title Low-voltage polymer transistors on hydrophobic dielectrics and surfaces
spellingShingle Low-voltage polymer transistors on hydrophobic dielectrics and surfaces
Kraft, Ulrike
Dielectric
OFET
Polymer transistor
Self-assembled monolayer
title_short Low-voltage polymer transistors on hydrophobic dielectrics and surfaces
title_full Low-voltage polymer transistors on hydrophobic dielectrics and surfaces
title_fullStr Low-voltage polymer transistors on hydrophobic dielectrics and surfaces
title_full_unstemmed Low-voltage polymer transistors on hydrophobic dielectrics and surfaces
title_sort Low-voltage polymer transistors on hydrophobic dielectrics and surfaces
dc.creator.none.fl_str_mv Kraft, Ulrike
Nikolka, Mark
Wang, Ging‐Ji Nathan
Kim, Yeongin
Pfattner, Raphael
Alsufyani, Maryam
McCulloch, Iain
Murmann, Boris
Bao, Zhenan
author Kraft, Ulrike
author_facet Kraft, Ulrike
Nikolka, Mark
Wang, Ging‐Ji Nathan
Kim, Yeongin
Pfattner, Raphael
Alsufyani, Maryam
McCulloch, Iain
Murmann, Boris
Bao, Zhenan
author_role author
author2 Nikolka, Mark
Wang, Ging‐Ji Nathan
Kim, Yeongin
Pfattner, Raphael
Alsufyani, Maryam
McCulloch, Iain
Murmann, Boris
Bao, Zhenan
author2_role author
author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Alexander von Humboldt Foundation
European Commission
Agencia Estatal de Investigación (España)
Kraft, Ulrike [0000-0002-2104-9706]
Pfattner, Raphael [0000-0002-7232-1845]
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
dc.subject.none.fl_str_mv Dielectric
OFET
Polymer transistor
Self-assembled monolayer
topic Dielectric
OFET
Polymer transistor
Self-assembled monolayer
description A set of unique features, including large-area solution processing on flexible and stretchable substrates, make polymer semiconductors a promising material choice for a range of state-of-the-art applications in electronics, optoelectronics and sensing. Yet, an inherent weakness of polymer semiconductors remains their low dielectric constants, increasing their susceptibility toward unscreened dipoles. These dipoles are particularly prevalent at polymer-dielectric interfaces with high-k dielectrics, which are essential for the operation of devices such as low-voltage field-effect transistors. This shortcoming can be addressed by using self-assembled monolayers (SAMs) to passivate surfaces that impact charge transport. However, SAM-treatment also increases the hydrophobicity of surfaces and therefore poses a challenge for subsequent solution processing steps and complex packaging of devices. Here, we report low-voltage polymer transistors processed by spin coating of the polymer semiconductors on highly hydrophobic SAM-treated aluminum and hafnium oxide dielectrics (contact angles >100) through fine-tuning of the interfacial tension at the polymer-dielectric interface. This approach enables the processing and detailed characterization of near-amorphous (indacenodithiophene-cobenzothiadiazole) as well as semicrystalline (poly(2,5-bis(2-octyldodecyl)-3,6-di(thiophen-2-yl)diketopyrrolo[3,4-c]pyrrole-1,4-dione-alt-thieno[3,2-b]thiophen)) polymer semiconductors. We demonstrate polymer transistors that exhibit high on-currents and field-independent, charge carrier mobilities of 0.8 cm2 V−1s−1 at low operating voltages (<3 V).
publishDate 2023
dc.date.none.fl_str_mv 2023
2023
2023
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
Publisher's version
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/331366
https://api.elsevier.com/content/abstract/scopus_id/85149658774
url http://hdl.handle.net/10261/331366
https://api.elsevier.com/content/abstract/scopus_id/85149658774
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv #PLACEHOLDER_PARENT_METADATA_VALUE#
info:eu-repo/grantAgreement/EC/H2020/747461
JPhys Materials
http://doi.org/10.1088/2515-7639/acb7a1
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv Institute of Physics Publishing
publisher.none.fl_str_mv Institute of Physics Publishing
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869425777789894656
score 15,81155

Similares en LA Referencia