On the influence of interface charging dynamics and stressing conditions in strained silicon devices
[EN] The performance of strained silicon devices based on the deposition of a top silicon nitride layer with high stress have been thoroughly analyzed by means of simulations and experimental results. Results clearly indicate that the electro-optic static response is basically governed by carrier ef...
| Autores: | , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2017 |
| País: | España |
| Institución: | Universitat Politècnica de València (UPV) |
| Repositorio: | RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia |
| Idioma: | inglés |
| OAI Identifier: | oai:riunet.upv.es:10251/103772 |
| Acceso en línea: | https://riunet.upv.es/handle/10251/103772 |
| Access Level: | acceso abierto |
| Palabra clave: | Strained silicon Silicon photonics TEORIA DE LA SEÑAL Y COMUNICACIONES |
| Sumario: | [EN] The performance of strained silicon devices based on the deposition of a top silicon nitride layer with high stress have been thoroughly analyzed by means of simulations and experimental results. Results clearly indicate that the electro-optic static response is basically governed by carrier efects. A frst evidence is the appearance of a variable optical absorption with the applied voltage that should not occur in case of having a purely electro-optic Pockels efect. However, hysteresis and saturation efects are also observed. We demonstrate that such efects are mainly due to the carrier trapping dynamics at the interface between the silicon and the silicon nitride and their infuence on the silicon nitride charge. This theory is further confrmed by analyzing identical devices but with the silicon nitride cladding layer optimized to have intrinsic stresses of opposite sign and magnitude. The latter is achieved by a post annealing process which produces a defect healing and consequently a reduction of the silicon nitride charge. Raman measurements are also carried out to confrm the obtained results. |
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