Influence of a gold seed in transparent V<sub>2</sub>O<sub>x</sub>/Ag/V<sub>2</sub>O<sub>x</sub> selective contacts for dopant-free silicon solar cells
Dielectric/metal/dielectric structures based on vanadium pentoxide with a thin silver interlayer have been optimized to replace traditional transparent electrodes. As would be expected, there is a trade-off in the metal thickness to achieve simultaneously high transparency and low sheet resistance....
| Autores: | , , , , , , , , , , , |
|---|---|
| Formato: | artículo |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 2018 |
| País: | España |
| Recursos: | Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya) |
| Repositorio: | Recercat. Dipósit de la Recerca de Catalunya |
| OAI Identifier: | oai:recercat.cat:2445/127122 |
| Acesso em linha: | https://hdl.handle.net/2445/127122 |
| Access Level: | acceso abierto |
| Palavra-chave: | Cèl·lules solars Cèl·lules fotovoltaiques Silici Conductivitat elèctrica Solar cells Photovoltaic cells Silicon Electric conductivity |
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Influence of a gold seed in transparent V<sub>2</sub>O<sub>x</sub>/Ag/V<sub>2</sub>O<sub>x</sub> selective contacts for dopant-free silicon solar cellsNguyen, Hieu TrungRos Costals, EloiTom, ThomasBertomeu i Balagueró, JoanAsensi López, José MiguelAndreu i Batallé, JordiMartin Garcia, IsidroOrtega Villasclaras, Pablo RafaelGarin Escriva, MoisesPuigdollers i González, JoaquimVoz Sánchez, CristóbalAlcubilla González, RamónCèl·lules solarsCèl·lules fotovoltaiquesSiliciConductivitat elèctricaSolar cellsPhotovoltaic cellsSiliconElectric conductivityDielectric/metal/dielectric structures based on vanadium pentoxide with a thin silver interlayer have been optimized to replace traditional transparent electrodes. As would be expected, there is a trade-off in the metal thickness to achieve simultaneously high transparency and low sheet resistance. It has been demonstrated that an ultrathin gold seed prevents the tendency of silver to form clusters. This wetting effect reduces the metal thickness needed to form a continuous film, which leads to a higher averaged transmittance and very low sheet resistance. On the other hand, vanadium pentoxide on silicon forms a high quality hole-selective contact. Thus, these structures can be used as an all-in-one transparent electrode and selective contact for a new kind of heterojunction solar cells. This concept has been proved in a 13.3% efficient solar cell fabricated on n-type silicon wafers. Besides dopant-free, the complete fabrication route did not require any sputtered transparent electrode.Institute of Electrical and Electronics Engineers (IEEE)2019201920182019info:eu-repo/semantics/articleinfo:eu-repo/semantics/acceptedVersion7 p.application/pdfhttps://hdl.handle.net/2445/127122Articles publicats en revistes (Física Aplicada)reponame:Recercat. Dipósit de la Recerca de Catalunyainstname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)InglésVersió postprint del document publicat a: https://doi.org/10.1109/JPHOTOV.2018.2875876IEEE Journal of Photovoltaics, 2018, vol. 9, num. 1, p. 72-77https://doi.org/10.1109/JPHOTOV.2018.2875876(c) Institute of Electrical and Electronics Engineers (IEEE), 2018info:eu-repo/semantics/openAccessoai:recercat.cat:2445/1271222026-05-29T05:05:01Z |
| dc.title.none.fl_str_mv |
Influence of a gold seed in transparent V<sub>2</sub>O<sub>x</sub>/Ag/V<sub>2</sub>O<sub>x</sub> selective contacts for dopant-free silicon solar cells |
| title |
Influence of a gold seed in transparent V<sub>2</sub>O<sub>x</sub>/Ag/V<sub>2</sub>O<sub>x</sub> selective contacts for dopant-free silicon solar cells |
| spellingShingle |
Influence of a gold seed in transparent V<sub>2</sub>O<sub>x</sub>/Ag/V<sub>2</sub>O<sub>x</sub> selective contacts for dopant-free silicon solar cells Nguyen, Hieu Trung Cèl·lules solars Cèl·lules fotovoltaiques Silici Conductivitat elèctrica Solar cells Photovoltaic cells Silicon Electric conductivity |
| title_short |
Influence of a gold seed in transparent V<sub>2</sub>O<sub>x</sub>/Ag/V<sub>2</sub>O<sub>x</sub> selective contacts for dopant-free silicon solar cells |
| title_full |
Influence of a gold seed in transparent V<sub>2</sub>O<sub>x</sub>/Ag/V<sub>2</sub>O<sub>x</sub> selective contacts for dopant-free silicon solar cells |
| title_fullStr |
Influence of a gold seed in transparent V<sub>2</sub>O<sub>x</sub>/Ag/V<sub>2</sub>O<sub>x</sub> selective contacts for dopant-free silicon solar cells |
| title_full_unstemmed |
Influence of a gold seed in transparent V<sub>2</sub>O<sub>x</sub>/Ag/V<sub>2</sub>O<sub>x</sub> selective contacts for dopant-free silicon solar cells |
| title_sort |
Influence of a gold seed in transparent V<sub>2</sub>O<sub>x</sub>/Ag/V<sub>2</sub>O<sub>x</sub> selective contacts for dopant-free silicon solar cells |
| dc.creator.none.fl_str_mv |
Nguyen, Hieu Trung Ros Costals, Eloi Tom, Thomas Bertomeu i Balagueró, Joan Asensi López, José Miguel Andreu i Batallé, Jordi Martin Garcia, Isidro Ortega Villasclaras, Pablo Rafael Garin Escriva, Moises Puigdollers i González, Joaquim Voz Sánchez, Cristóbal Alcubilla González, Ramón |
| author |
Nguyen, Hieu Trung |
| author_facet |
Nguyen, Hieu Trung Ros Costals, Eloi Tom, Thomas Bertomeu i Balagueró, Joan Asensi López, José Miguel Andreu i Batallé, Jordi Martin Garcia, Isidro Ortega Villasclaras, Pablo Rafael Garin Escriva, Moises Puigdollers i González, Joaquim Voz Sánchez, Cristóbal Alcubilla González, Ramón |
| author_role |
author |
| author2 |
Ros Costals, Eloi Tom, Thomas Bertomeu i Balagueró, Joan Asensi López, José Miguel Andreu i Batallé, Jordi Martin Garcia, Isidro Ortega Villasclaras, Pablo Rafael Garin Escriva, Moises Puigdollers i González, Joaquim Voz Sánchez, Cristóbal Alcubilla González, Ramón |
| author2_role |
author author author author author author author author author author author |
| dc.subject.none.fl_str_mv |
Cèl·lules solars Cèl·lules fotovoltaiques Silici Conductivitat elèctrica Solar cells Photovoltaic cells Silicon Electric conductivity |
| topic |
Cèl·lules solars Cèl·lules fotovoltaiques Silici Conductivitat elèctrica Solar cells Photovoltaic cells Silicon Electric conductivity |
| description |
Dielectric/metal/dielectric structures based on vanadium pentoxide with a thin silver interlayer have been optimized to replace traditional transparent electrodes. As would be expected, there is a trade-off in the metal thickness to achieve simultaneously high transparency and low sheet resistance. It has been demonstrated that an ultrathin gold seed prevents the tendency of silver to form clusters. This wetting effect reduces the metal thickness needed to form a continuous film, which leads to a higher averaged transmittance and very low sheet resistance. On the other hand, vanadium pentoxide on silicon forms a high quality hole-selective contact. Thus, these structures can be used as an all-in-one transparent electrode and selective contact for a new kind of heterojunction solar cells. This concept has been proved in a 13.3% efficient solar cell fabricated on n-type silicon wafers. Besides dopant-free, the complete fabrication route did not require any sputtered transparent electrode. |
| publishDate |
2018 |
| dc.date.none.fl_str_mv |
2018 2019 2019 2019 |
| dc.type.none.fl_str_mv |
info:eu-repo/semantics/article info:eu-repo/semantics/acceptedVersion |
| format |
article |
| status_str |
acceptedVersion |
| dc.identifier.none.fl_str_mv |
https://hdl.handle.net/2445/127122 |
| url |
https://hdl.handle.net/2445/127122 |
| dc.language.none.fl_str_mv |
Inglés |
| language_invalid_str_mv |
Inglés |
| dc.relation.none.fl_str_mv |
Versió postprint del document publicat a: https://doi.org/10.1109/JPHOTOV.2018.2875876 IEEE Journal of Photovoltaics, 2018, vol. 9, num. 1, p. 72-77 https://doi.org/10.1109/JPHOTOV.2018.2875876 |
| dc.rights.none.fl_str_mv |
(c) Institute of Electrical and Electronics Engineers (IEEE), 2018 info:eu-repo/semantics/openAccess |
| rights_invalid_str_mv |
(c) Institute of Electrical and Electronics Engineers (IEEE), 2018 |
| eu_rights_str_mv |
openAccess |
| dc.format.none.fl_str_mv |
7 p. application/pdf |
| dc.publisher.none.fl_str_mv |
Institute of Electrical and Electronics Engineers (IEEE) |
| publisher.none.fl_str_mv |
Institute of Electrical and Electronics Engineers (IEEE) |
| dc.source.none.fl_str_mv |
Articles publicats en revistes (Física Aplicada) reponame:Recercat. Dipósit de la Recerca de Catalunya instname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya) |
| instname_str |
Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya) |
| reponame_str |
Recercat. Dipósit de la Recerca de Catalunya |
| collection |
Recercat. Dipósit de la Recerca de Catalunya |
| repository.name.fl_str_mv |
|
| repository.mail.fl_str_mv |
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1869425683845873664 |
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15,812429 |