Development of nitrides based on InN for sensor applications

Premio Extraordinario de Doctorado de la UAH en el año académico 2016-2017

Detalhes bibliográficos
Autor: Núñez Cascajero, Arántzazu
Formato: tesis doctoral
Fecha de publicación:2017
País:España
Recursos:Universidad de Alcalá (UAH)
Repositorio:e_Buah Biblioteca Digital Universidad de Alcalá
Idioma:inglés
OAI Identifier:oai:ebuah.uah.es:10017/38166
Acesso em linha:http://hdl.handle.net/10017/38166
Access Level:acceso abierto
Palavra-chave:Nitruros
Detectores
Electrónica
Electronics
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spelling Development of nitrides based on InN for sensor applicationsNúñez Cascajero, ArántzazuNitrurosDetectoresElectrónicaElectronicsPremio Extraordinario de Doctorado de la UAH en el año académico 2016-2017The unique properties of the III nitrides, their high radiation hardness, high thermal stability and wide direct band gap makes them interesting for its application in electronic and opto-electronic devices. AlInN is of particular interest because its band gap energy can be tuned between 0.7 to 6.2 eV depending on the alloy composition so that it is possible to engineer the electronic structure for each specific application.It has been grown by different techniques, among them, radio frequency reactive sputtering allows deposition in a wide range of substrate types and temperatures, these advantages together with the low cost of the technique are the reasons for which sputtering technique has been selected for this Thesis.Several substrates such as sapphire, p silicon (111), glass and optical fibers have been used for growing AlInN by radio frequency reactive sputtering. The growth conditions of AlInN have been optimized for the different substrates by studying its structural, chemical, morphological, electrical and optical properties. AlInN layers grown with the best growth conditions were processed into devices. The layers grown on sapphire substrates were processed into photoconductors. Their characterization shows a strongly sublinear response with the optical power and a smooth drop of the responsivity for excitation below the band gap. Also these devices present persistent photoconductivity effects. On the other hand, the layers grown on p silicon (111) have been processed as solar cells, it has been demonstrated that the devices change their behavior when they are irradiated with light, the IV characteristics and external quantum efficiency are presented and show that the use of a 4 nm AlN buffer layer improves the device properties. The layers grown at low substrate temperature on optical fibers have been studied as surface plasmon resonance sensors. It has been demonstrated that the homogeneity of the ternary compound acting as dielectric layer is very important to obtain better sensitivities and narrower transmittance dips. The use of different compositions in the dielectric layer allows the selection of the transmittance resonance dip. The metal layer thickness effect has also been studied showing that higher metal thicknesses increase the sensitivity with an increase in the full width at half maximum of the transmittance dip, so it has to be chosen taking into account the use of the sensor.Naranjo Vega, Fernando BernabéGonzález Herráez, Miguel20172017-01-01doctoral thesishttp://purl.org/coar/resource_type/c_db06NAhttp://purl.org/coar/version/c_be7fb7dd8ff6fe43info:eu-repo/semantics/doctoralThesisapplication/pdfhttp://hdl.handle.net/10017/38166reponame:e_Buah Biblioteca Digital Universidad de Alcaláinstname:Universidad de Alcalá (UAH)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2Attribution-NonCommercial-NoDerivatives 4.0 Internationalhttp://creativecommons.org/licenses/by-nc-nd/4.0/info:eu-repo/semantics/openAccessoai:ebuah.uah.es:10017/381662026-06-18T11:13:07Z
dc.title.none.fl_str_mv Development of nitrides based on InN for sensor applications
title Development of nitrides based on InN for sensor applications
spellingShingle Development of nitrides based on InN for sensor applications
Núñez Cascajero, Arántzazu
Nitruros
Detectores
Electrónica
Electronics
title_short Development of nitrides based on InN for sensor applications
title_full Development of nitrides based on InN for sensor applications
title_fullStr Development of nitrides based on InN for sensor applications
title_full_unstemmed Development of nitrides based on InN for sensor applications
title_sort Development of nitrides based on InN for sensor applications
dc.creator.none.fl_str_mv Núñez Cascajero, Arántzazu
author Núñez Cascajero, Arántzazu
author_facet Núñez Cascajero, Arántzazu
author_role author
dc.contributor.none.fl_str_mv Naranjo Vega, Fernando Bernabé
González Herráez, Miguel
dc.subject.none.fl_str_mv Nitruros
Detectores
Electrónica
Electronics
topic Nitruros
Detectores
Electrónica
Electronics
description Premio Extraordinario de Doctorado de la UAH en el año académico 2016-2017
publishDate 2017
dc.date.none.fl_str_mv 2017
2017-01-01
dc.type.none.fl_str_mv doctoral thesis
http://purl.org/coar/resource_type/c_db06
NA
http://purl.org/coar/version/c_be7fb7dd8ff6fe43
dc.type.openaire.fl_str_mv info:eu-repo/semantics/doctoralThesis
format doctoralThesis
dc.identifier.none.fl_str_mv http://hdl.handle.net/10017/38166
url http://hdl.handle.net/10017/38166
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
Attribution-NonCommercial-NoDerivatives 4.0 International
http://creativecommons.org/licenses/by-nc-nd/4.0/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
Attribution-NonCommercial-NoDerivatives 4.0 International
http://creativecommons.org/licenses/by-nc-nd/4.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:e_Buah Biblioteca Digital Universidad de Alcalá
instname:Universidad de Alcalá (UAH)
instname_str Universidad de Alcalá (UAH)
reponame_str e_Buah Biblioteca Digital Universidad de Alcalá
collection e_Buah Biblioteca Digital Universidad de Alcalá
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15.300719

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