Tunable zero-field Kondo splitting in a quantum dot

We present detailed low-temperature transport measurements of a single quantum dot formed in an InGaAs/InP heterostructure with a strong tunnel coupling to the source and drain leads. The conventional spin-1/2 Kondo effect is observed for the quantum dot in the N=9 charge state. By changing the volt...

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Detalles Bibliográficos
Autores: Larsson, M., Lim, Jong-Soo, López, Rosa, Xu, H. Q.
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2013
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:dnet:digitalcsic_::a8e5b745bc158ad3556eab7089b5b8fa
Acceso en línea:http://hdl.handle.net/10261/116561
Access Level:acceso abierto
Descripción
Sumario:We present detailed low-temperature transport measurements of a single quantum dot formed in an InGaAs/InP heterostructure with a strong tunnel coupling to the source and drain leads. The conventional spin-1/2 Kondo effect is observed for the quantum dot in the N=9 charge state. By changing the voltages applied to the quantum dot barrier gates, we find a zero-field splitting of the Kondo resonance and a zero-bias differential conductance, which shows a nonmonotonic in-plane magnetic field and temperature dependence. Using a two-site Hubbard model, we show that the main observed features can be explained in terms of Kondo correlation effects resulting from the exchange interaction between two localized spins. © 2013 American Physical Society.

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