Universal Spin Diffusion Length in Polycrystalline Graphene

Graphene grown by chemical vapor deposition (CVD) is the most promising material for industrial-scale applications based on graphene monolayers. It also holds promise for spintronics; despite being polycrystalline, spin transport in CVD graphene has been measured over lengths up to 30 μm, which is o...

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Autores: Cummings, Aron|||0000-0003-2307-497X, Dubois, Simon M.M.|||0000-0003-2565-859X, Charlier, Jean Christophe|||0000-0002-5749-1328, Roche, Stephan|||0000-0003-0323-4665
Tipo de recurso: artículo
Fecha de publicación:2019
País:España
Institución:Universitat Autònoma de Barcelona
Repositorio:Dipòsit Digital de Documents de la UAB
Idioma:inglés
OAI Identifier:oai:ddd.uab.cat:230708
Acceso en línea:https://ddd.uab.cat/record/230708
https://dx.doi.org/urn:doi:10.1021/acs.nanolett.9b03112
Access Level:acceso abierto
Palabra clave:Graphene
CVD
Polycrystalline
Grain boundaries
Spin relaxation
Spintronics
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spelling Universal Spin Diffusion Length in Polycrystalline GrapheneCummings, Aron|||0000-0003-2307-497XDubois, Simon M.M.|||0000-0003-2565-859XCharlier, Jean Christophe|||0000-0002-5749-1328Roche, Stephan|||0000-0003-0323-4665GrapheneCVDPolycrystallineGrain boundariesSpin relaxationSpintronicsGraphene grown by chemical vapor deposition (CVD) is the most promising material for industrial-scale applications based on graphene monolayers. It also holds promise for spintronics; despite being polycrystalline, spin transport in CVD graphene has been measured over lengths up to 30 μm, which is on par with the best measurements made in single-crystal graphene. These results suggest that grain boundaries (GBs) in CVD graphene, while impeding charge transport, may have little effect on spin transport. However, to date very little is known about the true impact of disordered networks of GBs on spin relaxation. Here, by using first-principles simulations, we derive an effective tight-binding model of graphene GBs in the presence of spin-orbit coupling (SOC), which we then use to evaluate spin transport in realistic morphologies of polycrystalline graphene. The spin diffusion length is found to be independent of the grain size, and it is determined only by the strength of the substrate-induced SOC. This result is consistent with the D'yakonov-Perel' mechanism of spin relaxation in the diffusive regime, but we find that it also holds in the presence of quantum interference. These results clarify the role played by GBs and demonstrate that the average grain size does not dictate the upper limit for spin transport in CVD-grown graphene, a result of fundamental importance for optimizing large-scale graphene-based spintronic devices. 22019-01-0120192019-01-01Articlehttp://purl.org/coar/resource_type/c_6501AMhttp://purl.org/coar/version/c_ab4af688f83e57aainfo:eu-repo/semantics/articleapplication/pdfhttps://ddd.uab.cat/record/230708https://dx.doi.org/urn:doi:10.1021/acs.nanolett.9b03112reponame:Dipòsit Digital de Documents de la UABinstname:Universitat Autònoma de BarcelonaInglésengEuropean Commission https://doi.org/10.13039/501100000780 785219European Commission https://doi.org/10.13039/501100000780 696656Ministerio de Economía y Competitividad https://doi.org/10.13039/501100003329 SEV-2017-0706open accesshttp://purl.org/coar/access_right/c_abf2Aquest material està protegit per drets d'autor i/o drets afins. Podeu utilitzar aquest material en funció del que permet la legislació de drets d'autor i drets afins d'aplicació al vostre cas. Per a d'altres usos heu d'obtenir permís del(s) titular(s) de drets.https://rightsstatements.org/vocab/InC/1.0/info:eu-repo/semantics/openAccessoai:ddd.uab.cat:2307082026-06-06T12:50:31Z
dc.title.none.fl_str_mv Universal Spin Diffusion Length in Polycrystalline Graphene
title Universal Spin Diffusion Length in Polycrystalline Graphene
spellingShingle Universal Spin Diffusion Length in Polycrystalline Graphene
Cummings, Aron|||0000-0003-2307-497X
Graphene
CVD
Polycrystalline
Grain boundaries
Spin relaxation
Spintronics
title_short Universal Spin Diffusion Length in Polycrystalline Graphene
title_full Universal Spin Diffusion Length in Polycrystalline Graphene
title_fullStr Universal Spin Diffusion Length in Polycrystalline Graphene
title_full_unstemmed Universal Spin Diffusion Length in Polycrystalline Graphene
title_sort Universal Spin Diffusion Length in Polycrystalline Graphene
dc.creator.none.fl_str_mv Cummings, Aron|||0000-0003-2307-497X
Dubois, Simon M.M.|||0000-0003-2565-859X
Charlier, Jean Christophe|||0000-0002-5749-1328
Roche, Stephan|||0000-0003-0323-4665
author Cummings, Aron|||0000-0003-2307-497X
author_facet Cummings, Aron|||0000-0003-2307-497X
Dubois, Simon M.M.|||0000-0003-2565-859X
Charlier, Jean Christophe|||0000-0002-5749-1328
Roche, Stephan|||0000-0003-0323-4665
author_role author
author2 Dubois, Simon M.M.|||0000-0003-2565-859X
Charlier, Jean Christophe|||0000-0002-5749-1328
Roche, Stephan|||0000-0003-0323-4665
author2_role author
author
author
dc.subject.none.fl_str_mv Graphene
CVD
Polycrystalline
Grain boundaries
Spin relaxation
Spintronics
topic Graphene
CVD
Polycrystalline
Grain boundaries
Spin relaxation
Spintronics
description Graphene grown by chemical vapor deposition (CVD) is the most promising material for industrial-scale applications based on graphene monolayers. It also holds promise for spintronics; despite being polycrystalline, spin transport in CVD graphene has been measured over lengths up to 30 μm, which is on par with the best measurements made in single-crystal graphene. These results suggest that grain boundaries (GBs) in CVD graphene, while impeding charge transport, may have little effect on spin transport. However, to date very little is known about the true impact of disordered networks of GBs on spin relaxation. Here, by using first-principles simulations, we derive an effective tight-binding model of graphene GBs in the presence of spin-orbit coupling (SOC), which we then use to evaluate spin transport in realistic morphologies of polycrystalline graphene. The spin diffusion length is found to be independent of the grain size, and it is determined only by the strength of the substrate-induced SOC. This result is consistent with the D'yakonov-Perel' mechanism of spin relaxation in the diffusive regime, but we find that it also holds in the presence of quantum interference. These results clarify the role played by GBs and demonstrate that the average grain size does not dictate the upper limit for spin transport in CVD-grown graphene, a result of fundamental importance for optimizing large-scale graphene-based spintronic devices.
publishDate 2019
dc.date.none.fl_str_mv 2
2019-01-01
2019
2019-01-01
dc.type.none.fl_str_mv Article
http://purl.org/coar/resource_type/c_6501
AM
http://purl.org/coar/version/c_ab4af688f83e57aa
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://ddd.uab.cat/record/230708
https://dx.doi.org/urn:doi:10.1021/acs.nanolett.9b03112
url https://ddd.uab.cat/record/230708
https://dx.doi.org/urn:doi:10.1021/acs.nanolett.9b03112
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.relation.none.fl_str_mv European Commission https://doi.org/10.13039/501100000780 785219
European Commission https://doi.org/10.13039/501100000780 696656
Ministerio de Economía y Competitividad https://doi.org/10.13039/501100003329 SEV-2017-0706
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
https://rightsstatements.org/vocab/InC/1.0/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
https://rightsstatements.org/vocab/InC/1.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Dipòsit Digital de Documents de la UAB
instname:Universitat Autònoma de Barcelona
instname_str Universitat Autònoma de Barcelona
reponame_str Dipòsit Digital de Documents de la UAB
collection Dipòsit Digital de Documents de la UAB
repository.name.fl_str_mv
repository.mail.fl_str_mv
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