Investigation of split CoFeB/Ta/CoFeB/MgO stacks for magnetic memories applications
We report on the static and dynamic magnetic properties of W/CoFeB/Ta/CoFeB/MgO stacks, where the CoFeB layer is split in two by a 0.3 nm-thick Ta “dusting” layer. A total CoFeB thickness between 1.2 and 2.4 nm is studied. Perpendicular magnetic anisotropy is obtained for thickness below 1.8 nm even...
| Autores: | , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 2019 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/187613 |
| Acceso en línea: | http://hdl.handle.net/10261/187613 |
| Access Level: | acceso abierto |
| Palabra clave: | Perpendicular magnetic anisotropy Spin-orbit torques MRAMs CoFeB W underlayers |
| Sumario: | We report on the static and dynamic magnetic properties of W/CoFeB/Ta/CoFeB/MgO stacks, where the CoFeB layer is split in two by a 0.3 nm-thick Ta “dusting” layer. A total CoFeB thickness between 1.2 and 2.4 nm is studied. Perpendicular magnetic anisotropy is obtained for thickness below 1.8 nm even at the as-deposited stacks, and it is enhanced after annealing. Saturation magnetization is 1520 (1440) kA/m before (after) annealing, increased compared to non-split CoFeB layers. Ferromagnetic resonance measurements show that high magnetic anisotropy energy may be achieved (effective anisotropy field 0.571 ± 0.003 T), combined to a moderate Gilbert damping (0.030 ± 0.001). We argue that the above characteristics make the split-CoFeB system advantageous for spintronics applications. |
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