High Performance Seesaw Torsional CMOS-MEMS Relay Using Tungsten VIA Layer

In this paper, a seesaw torsional relay monolithically integrated in a standard 0.35 μm complementary metal oxide semiconductor (CMOS) technology is presented. The seesaw relay is fabricated using the Back-End-Of-Line (BEOL) layers available, specifically using the tungsten VIA3 layer of a 0.35 μm C...

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Autores: Riverola, Martín|||0000-0002-6844-3014, Torres, Francesc|||0000-0002-9360-0034, Uranga del Monte, Aránzazu|||0000-0002-3593-4060, Barniol i Beumala, Núria|||0000-0001-6325-2166
Tipo de recurso: artículo
Fecha de publicación:2018
País:España
Institución:Universitat Autònoma de Barcelona
Repositorio:Dipòsit Digital de Documents de la UAB
Idioma:inglés
OAI Identifier:oai:ddd.uab.cat:228068
Acceso en línea:https://ddd.uab.cat/record/228068
https://dx.doi.org/urn:doi:10.3390/mi9110579
Access Level:acceso abierto
Palabra clave:MEMS relays
MEMS switches
Mechanical relays
CMOS-MEMS
MEMS
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spelling High Performance Seesaw Torsional CMOS-MEMS Relay Using Tungsten VIA LayerRiverola, Martín|||0000-0002-6844-3014Torres, Francesc|||0000-0002-9360-0034Uranga del Monte, Aránzazu|||0000-0002-3593-4060Barniol i Beumala, Núria|||0000-0001-6325-2166MEMS relaysMEMS switchesMechanical relaysCMOS-MEMSMEMSIn this paper, a seesaw torsional relay monolithically integrated in a standard 0.35 μm complementary metal oxide semiconductor (CMOS) technology is presented. The seesaw relay is fabricated using the Back-End-Of-Line (BEOL) layers available, specifically using the tungsten VIA3 layer of a 0.35 μm CMOS technology. Three different contact materials are studied to discriminate which is the most adequate as a mechanical relay. The robustness of the relay is proved, and its main characteristics as a relay for the three different contact interfaces are provided. The seesaw relay is capable of a double hysteretic switching cycle, providing compactness for mechanical logic processing. The low contact resistance achieved with the TiN/W mechanical contact with high cycling life time is competitive in comparison with the state-of-the art. 22018-01-0120182018-01-01Articlehttp://purl.org/coar/resource_type/c_6501VoRhttp://purl.org/coar/version/c_970fb48d4fbd8a85info:eu-repo/semantics/articleapplication/pdfhttps://ddd.uab.cat/record/228068https://dx.doi.org/urn:doi:10.3390/mi9110579reponame:Dipòsit Digital de Documents de la UABinstname:Universitat Autònoma de BarcelonaInglésengMinisterio de Economía y Competitividad https://doi.org/10.13039/501100003329 TEC2015-66337-Ropen accesshttp://purl.org/coar/access_right/c_abf2Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original.https://creativecommons.org/licenses/by/4.0/info:eu-repo/semantics/openAccessoai:ddd.uab.cat:2280682026-06-06T12:50:31Z
dc.title.none.fl_str_mv High Performance Seesaw Torsional CMOS-MEMS Relay Using Tungsten VIA Layer
title High Performance Seesaw Torsional CMOS-MEMS Relay Using Tungsten VIA Layer
spellingShingle High Performance Seesaw Torsional CMOS-MEMS Relay Using Tungsten VIA Layer
Riverola, Martín|||0000-0002-6844-3014
MEMS relays
MEMS switches
Mechanical relays
CMOS-MEMS
MEMS
title_short High Performance Seesaw Torsional CMOS-MEMS Relay Using Tungsten VIA Layer
title_full High Performance Seesaw Torsional CMOS-MEMS Relay Using Tungsten VIA Layer
title_fullStr High Performance Seesaw Torsional CMOS-MEMS Relay Using Tungsten VIA Layer
title_full_unstemmed High Performance Seesaw Torsional CMOS-MEMS Relay Using Tungsten VIA Layer
title_sort High Performance Seesaw Torsional CMOS-MEMS Relay Using Tungsten VIA Layer
dc.creator.none.fl_str_mv Riverola, Martín|||0000-0002-6844-3014
Torres, Francesc|||0000-0002-9360-0034
Uranga del Monte, Aránzazu|||0000-0002-3593-4060
Barniol i Beumala, Núria|||0000-0001-6325-2166
author Riverola, Martín|||0000-0002-6844-3014
author_facet Riverola, Martín|||0000-0002-6844-3014
Torres, Francesc|||0000-0002-9360-0034
Uranga del Monte, Aránzazu|||0000-0002-3593-4060
Barniol i Beumala, Núria|||0000-0001-6325-2166
author_role author
author2 Torres, Francesc|||0000-0002-9360-0034
Uranga del Monte, Aránzazu|||0000-0002-3593-4060
Barniol i Beumala, Núria|||0000-0001-6325-2166
author2_role author
author
author
dc.subject.none.fl_str_mv MEMS relays
MEMS switches
Mechanical relays
CMOS-MEMS
MEMS
topic MEMS relays
MEMS switches
Mechanical relays
CMOS-MEMS
MEMS
description In this paper, a seesaw torsional relay monolithically integrated in a standard 0.35 μm complementary metal oxide semiconductor (CMOS) technology is presented. The seesaw relay is fabricated using the Back-End-Of-Line (BEOL) layers available, specifically using the tungsten VIA3 layer of a 0.35 μm CMOS technology. Three different contact materials are studied to discriminate which is the most adequate as a mechanical relay. The robustness of the relay is proved, and its main characteristics as a relay for the three different contact interfaces are provided. The seesaw relay is capable of a double hysteretic switching cycle, providing compactness for mechanical logic processing. The low contact resistance achieved with the TiN/W mechanical contact with high cycling life time is competitive in comparison with the state-of-the art.
publishDate 2018
dc.date.none.fl_str_mv 2
2018-01-01
2018
2018-01-01
dc.type.none.fl_str_mv Article
http://purl.org/coar/resource_type/c_6501
VoR
http://purl.org/coar/version/c_970fb48d4fbd8a85
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://ddd.uab.cat/record/228068
https://dx.doi.org/urn:doi:10.3390/mi9110579
url https://ddd.uab.cat/record/228068
https://dx.doi.org/urn:doi:10.3390/mi9110579
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.relation.none.fl_str_mv Ministerio de Economía y Competitividad https://doi.org/10.13039/501100003329 TEC2015-66337-R
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
https://creativecommons.org/licenses/by/4.0/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
https://creativecommons.org/licenses/by/4.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Dipòsit Digital de Documents de la UAB
instname:Universitat Autònoma de Barcelona
instname_str Universitat Autònoma de Barcelona
reponame_str Dipòsit Digital de Documents de la UAB
collection Dipòsit Digital de Documents de la UAB
repository.name.fl_str_mv
repository.mail.fl_str_mv
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