Ag-N dual acceptor doped p-type ZnO thin films by DC reactive magnetron co-sputtering
ZnO p-type thin films were deposited by dual acceptor co-doping using nitrogen and silver via DC reactive magnetron co-sputtering. As precursor material were used a Zn and an Ag metallic targets with a purity of 99.99%. X-ray energy dispersive spectroscopy (EDX) confirmed the presence of Ag and N in...
| Autores: | , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2016 |
| País: | España |
| Institución: | Universidad de Sevilla (US) |
| Repositorio: | idUS. Depósito de Investigación de la Universidad de Sevilla |
| OAI Identifier: | oai:idus.us.es:11441/147158 |
| Acceso en línea: | https://hdl.handle.net/11441/147158 https://doi.org/10.1016/j.matlet.2016.06.005 |
| Access Level: | acceso abierto |
| Palabra clave: | P-type zno Ag-n doping zno High hole concentration Co-sputtering |
| Sumario: | ZnO p-type thin films were deposited by dual acceptor co-doping using nitrogen and silver via DC reactive magnetron co-sputtering. As precursor material were used a Zn and an Ag metallic targets with a purity of 99.99%. X-ray energy dispersive spectroscopy (EDX) confirmed the presence of Ag and N in ZnO: Ag,N films. The electrical properties were explored by Hall Effect measurement and showed a low hole concentration for the as-deposited ZnO: Ag,N film. However, after annealing treatment, the films remained p-type and the electrical properties were improved significantly. The best electrical properties showed a low resistivity of 8.56 x 103 Ωcm, Hall mobility of 23 cm2 /Vs and a very high hole concentration of 3.17 x 1019 cm-3. |
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