Modelling of novel-structured copper barium tin sulphide thin film solar cells

[EN] In this work, a novel structured Cu2BaSnS4 (CBTS)/ZnS/Zn(O, S) photovoltaic device is proposed. A nontoxic, earth-abundant and auspicious quaternary semiconductor compound copper barium tin sulphide (Cu2BaSnS4) is used as an absorber layer. We propose a novel Zn(O, S) buffer layer for a high-po...

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Detalhes bibliográficos
Autores: Hameed, K. Yousaf, Baig, Faisal, Toura, Hanae, Beg, Saira, Khani, Naveed Ali Kaim, Marí, B.|||0000-0003-0001-419X
Formato: artículo
Fecha de publicación:2019
País:España
Recursos:Universitat Politècnica de València (UPV)
Repositorio:RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
Idioma:inglés
OAI Identifier:oai:riunet.upv.es:10251/156666
Acesso em linha:https://riunet.upv.es/handle/10251/156666
Access Level:acceso abierto
Palavra-chave:Numerical analysis
SCAPS
Photovoltaics
Cu2BaSnS4
CBTS
Solar cell
FISICA APLICADA
Descrição
Resumo:[EN] In this work, a novel structured Cu2BaSnS4 (CBTS)/ZnS/Zn(O, S) photovoltaic device is proposed. A nontoxic, earth-abundant and auspicious quaternary semiconductor compound copper barium tin sulphide (Cu2BaSnS4) is used as an absorber layer. We propose a novel Zn(O, S) buffer layer for a high-power conversion efficiency (PCE) of CBTS-based thin film photovoltaic cells. Solar cell capacitance simulator software is used for device modelling and simulations are performed under a 1.5 AM illumination spectrum. The proposed device is investigated by means of numerical modelling and optimized the parameters to maximize its efficiency. Promising optimized functional parameters had been achieved from the proposed structure with back surface field layer with a PCE of 18.18%, a fill factor of 83.45%, a short-circuit current of 16.13 mA cm¿2 and an open-circuit voltage of 1.3 V. The promising results give an imperative standard for possible manufacturing of high efficiency, eco-friendly inorganic CBTS-based photovoltaic cells.