Analytical dead-band compensation for ZCS modulation applied to hybrid Si-SiC dual active bridge
© 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to s...
| Autores: | , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2020 |
| País: | España |
| Institución: | Universitat Politècnica de Catalunya (UPC) |
| Repositorio: | UPCommons. Portal del coneixement obert de la UPC |
| Idioma: | inglés |
| OAI Identifier: | oai:upcommons.upc.edu:2117/330552 |
| Acceso en línea: | https://hdl.handle.net/2117/330552 https://dx.doi.org/10.1109/ACCESS.2020.3028317 |
| Access Level: | acceso abierto |
| Palabra clave: | Electric current converters Power electronics Power semiconductors Dual active bridge (DAB Dead-band (DB) Hybrid Si-SiC Triangular modulation Zero current switching (ZCS) Convertidors de corrent elèctric Electrònica de potència Semiconductors de potència Àrees temàtiques de la UPC::Enginyeria elèctrica Àrees temàtiques de la UPC::Enginyeria electrònica::Electrònica de potència |
| Sumario: | © 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works |
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