Thermal Emission of Silicon at Near-Infrared Frequencies Mediated by Mie Resonances

[EN] Planck's law constitutes one of the cornerstones in physics. It explains the well-known spectrum of an ideal blackbody consisting of a smooth curve, whose peak wavelength and intensity depend on the temperature of the body. This scenario changes drastically, however, when the size of t...

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Autores: Fenollosa Esteve, Roberto|||0000-0003-2758-9823, RAMIRO MANZANO, FERNANDO, GARÍN ESCRIVÁ, MOISÉS, Alcubilla, R.
Tipo de recurso: artículo
Fecha de publicación:2019
País:España
Institución:Universitat Politècnica de València (UPV)
Repositorio:RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
Idioma:inglés
OAI Identifier:oai:riunet.upv.es:10251/150637
Acceso en línea:https://riunet.upv.es/handle/10251/150637
Access Level:acceso abierto
Palabra clave:Microsphere
Silicon
Nanocavity
Whispering gallery modes
Super-Planckian
Light source
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spelling Thermal Emission of Silicon at Near-Infrared Frequencies Mediated by Mie ResonancesFenollosa Esteve, Roberto|||0000-0003-2758-9823RAMIRO MANZANO, FERNANDOGARÍN ESCRIVÁ, MOISÉSAlcubilla, R.MicrosphereSiliconNanocavityWhispering gallery modesSuper-PlanckianLight source[EN] Planck's law constitutes one of the cornerstones in physics. It explains the well-known spectrum of an ideal blackbody consisting of a smooth curve, whose peak wavelength and intensity depend on the temperature of the body. This scenario changes drastically, however, when the size of the emitting object is comparable to the wavelength of the emitted radiation. Here we show that a silicon microsphere (2-3 mu m in diameter) heated to around 800 degrees C yields a thermal emission spectrum consisting of pronounced peaks that are associated with Mie resonances. We experimentally demonstrate in the near-infrared the existence of modes with an ultrahigh quality factor, Q, of 400, which is substantially higher than values reported so far, and set a new benchmark in the field of thermal emission. Simulations predict that the thermal response of the microspheres is very fast, about 15 mu s. Additionally, the possibility of achieving light emission above the Planck limit at some frequency ranges is envisaged.This work was supported by several projects of the Spanish Ministry of Economy and Competitiveness (MINECO), Severo Ochoa program for Centers of Excellence (SEV-2016-0683), MAT2015-69669-PM, ENE2013-49984-EXP, ENE2015-74009-JIN (cofunded by the European Regional Development Fund), and of the Spanish Science, Innovation and Universities, PGC2018-099744-B-100. F.R.-M. thanks the financial contribution of MINECO through the program for young researchers support, TEC 2015 2015-74405-JIN. The authors greatly acknowledge the contribution of Prof. Francisco Meseguer for both the fruitful discussions and the revision of the manuscript, and Prof. Marie Louise McCarrey for careful proofreading of the manuscript.American Chemical SocietyInstituto Universitario Mixto de Tecnología QuímicaEuropean Regional Development FundMinisterio de Economía y CompetitividadAgencia Estatal de InvestigaciónRepositorio Institucional de la Universitat Politècnica de València Riunet20192019-12-18journal articlehttp://purl.org/coar/resource_type/c_6501VoRhttp://purl.org/coar/version/c_970fb48d4fbd8a85info:eu-repo/semantics/articleapplication/pdfapplication/pdfhttps://riunet.upv.es/handle/10251/150637reponame:RiuNet. Repositorio Institucional de la Universitat Politécnica de Valénciainstname:Universitat Politècnica de València (UPV)InglésengAgencia Estatal de Investigación http://dx.doi.org/10.13039/501100011033 Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020 PGC2018-099744-B-I00 AMPLIFICACION DE LOS FENOMENOS OPTOELECTRONICOS EN MICROCAVIDADESMinisterio de Economía y Competitividad http://dx.doi.org/10.13039/501100003329 MAT2015-69669-P OPTOLECTRONICA EN NANOCAVIDADES DE ALTO INDICE DE REFRACCION. DEL SILICIO A LA PEROVSKITAMinisterio de Economía y Competitividad http://dx.doi.org/10.13039/501100003329 TEC2015-74405-JIN MICRO- Y NANO-CAVIDADES BASADAS EN PEROVSKITA HALOGENADA. CELULAS SOLARES Y EMISORES DE LUZMinisterio de Economía y Competitividad http://dx.doi.org/10.13039/501100003329 ENE2013-49984-EXP SUPERANDO EL CUERPO NEGRO. ABSORCION Y EMISION DE LUZ EN UNA MICROESFERA DE SILICIO.Ministerio de Economía y Competitividad http://dx.doi.org/10.13039/501100003329 ENE2015-74009-JIN HACIA LA OBTENCION DE MULTIPLES CELULAS MONOCRISTALINAS DE SILICIO CON 20% DE EFICIENCIA Y MENOS DE 20 µM DE GROSOR A PARTIR DE UNA UNICA OBLEA.Ministerio de Economía y Competitividad http://dx.doi.org/10.13039/501100003329 SEV-2016-0683open accesshttp://purl.org/coar/access_right/c_abf2Reserva de todos los derechoshttp://rightsstatements.org/vocab/InC/1.0/info:eu-repo/semantics/openAccessoai:riunet.upv.es:10251/1506372026-06-13T07:49:27Z
dc.title.none.fl_str_mv Thermal Emission of Silicon at Near-Infrared Frequencies Mediated by Mie Resonances
title Thermal Emission of Silicon at Near-Infrared Frequencies Mediated by Mie Resonances
spellingShingle Thermal Emission of Silicon at Near-Infrared Frequencies Mediated by Mie Resonances
Fenollosa Esteve, Roberto|||0000-0003-2758-9823
Microsphere
Silicon
Nanocavity
Whispering gallery modes
Super-Planckian
Light source
title_short Thermal Emission of Silicon at Near-Infrared Frequencies Mediated by Mie Resonances
title_full Thermal Emission of Silicon at Near-Infrared Frequencies Mediated by Mie Resonances
title_fullStr Thermal Emission of Silicon at Near-Infrared Frequencies Mediated by Mie Resonances
title_full_unstemmed Thermal Emission of Silicon at Near-Infrared Frequencies Mediated by Mie Resonances
title_sort Thermal Emission of Silicon at Near-Infrared Frequencies Mediated by Mie Resonances
dc.creator.none.fl_str_mv Fenollosa Esteve, Roberto|||0000-0003-2758-9823
RAMIRO MANZANO, FERNANDO
GARÍN ESCRIVÁ, MOISÉS
Alcubilla, R.
author Fenollosa Esteve, Roberto|||0000-0003-2758-9823
author_facet Fenollosa Esteve, Roberto|||0000-0003-2758-9823
RAMIRO MANZANO, FERNANDO
GARÍN ESCRIVÁ, MOISÉS
Alcubilla, R.
author_role author
author2 RAMIRO MANZANO, FERNANDO
GARÍN ESCRIVÁ, MOISÉS
Alcubilla, R.
author2_role author
author
author
dc.contributor.none.fl_str_mv Instituto Universitario Mixto de Tecnología Química
European Regional Development Fund
Ministerio de Economía y Competitividad
Agencia Estatal de Investigación
Repositorio Institucional de la Universitat Politècnica de València Riunet
dc.subject.none.fl_str_mv Microsphere
Silicon
Nanocavity
Whispering gallery modes
Super-Planckian
Light source
topic Microsphere
Silicon
Nanocavity
Whispering gallery modes
Super-Planckian
Light source
description [EN] Planck's law constitutes one of the cornerstones in physics. It explains the well-known spectrum of an ideal blackbody consisting of a smooth curve, whose peak wavelength and intensity depend on the temperature of the body. This scenario changes drastically, however, when the size of the emitting object is comparable to the wavelength of the emitted radiation. Here we show that a silicon microsphere (2-3 mu m in diameter) heated to around 800 degrees C yields a thermal emission spectrum consisting of pronounced peaks that are associated with Mie resonances. We experimentally demonstrate in the near-infrared the existence of modes with an ultrahigh quality factor, Q, of 400, which is substantially higher than values reported so far, and set a new benchmark in the field of thermal emission. Simulations predict that the thermal response of the microspheres is very fast, about 15 mu s. Additionally, the possibility of achieving light emission above the Planck limit at some frequency ranges is envisaged.
publishDate 2019
dc.date.none.fl_str_mv 2019
2019-12-18
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
VoR
http://purl.org/coar/version/c_970fb48d4fbd8a85
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://riunet.upv.es/handle/10251/150637
url https://riunet.upv.es/handle/10251/150637
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.relation.none.fl_str_mv Agencia Estatal de Investigación http://dx.doi.org/10.13039/501100011033 Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020 PGC2018-099744-B-I00 AMPLIFICACION DE LOS FENOMENOS OPTOELECTRONICOS EN MICROCAVIDADES
Ministerio de Economía y Competitividad http://dx.doi.org/10.13039/501100003329 MAT2015-69669-P OPTOLECTRONICA EN NANOCAVIDADES DE ALTO INDICE DE REFRACCION. DEL SILICIO A LA PEROVSKITA
Ministerio de Economía y Competitividad http://dx.doi.org/10.13039/501100003329 TEC2015-74405-JIN MICRO- Y NANO-CAVIDADES BASADAS EN PEROVSKITA HALOGENADA. CELULAS SOLARES Y EMISORES DE LUZ
Ministerio de Economía y Competitividad http://dx.doi.org/10.13039/501100003329 ENE2013-49984-EXP SUPERANDO EL CUERPO NEGRO. ABSORCION Y EMISION DE LUZ EN UNA MICROESFERA DE SILICIO.
Ministerio de Economía y Competitividad http://dx.doi.org/10.13039/501100003329 ENE2015-74009-JIN HACIA LA OBTENCION DE MULTIPLES CELULAS MONOCRISTALINAS DE SILICIO CON 20% DE EFICIENCIA Y MENOS DE 20 µM DE GROSOR A PARTIR DE UNA UNICA OBLEA.
Ministerio de Economía y Competitividad http://dx.doi.org/10.13039/501100003329 SEV-2016-0683
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
Reserva de todos los derechos
http://rightsstatements.org/vocab/InC/1.0/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
Reserva de todos los derechos
http://rightsstatements.org/vocab/InC/1.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Chemical Society
publisher.none.fl_str_mv American Chemical Society
dc.source.none.fl_str_mv reponame:RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
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instname_str Universitat Politècnica de València (UPV)
reponame_str RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
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