Thermal Emission of Silicon at Near-Infrared Frequencies Mediated by Mie Resonances
[EN] Planck's law constitutes one of the cornerstones in physics. It explains the well-known spectrum of an ideal blackbody consisting of a smooth curve, whose peak wavelength and intensity depend on the temperature of the body. This scenario changes drastically, however, when the size of t...
| Autores: | , , , |
|---|---|
| Tipo de recurso: | artículo |
| Fecha de publicación: | 2019 |
| País: | España |
| Institución: | Universitat Politècnica de València (UPV) |
| Repositorio: | RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia |
| Idioma: | inglés |
| OAI Identifier: | oai:riunet.upv.es:10251/150637 |
| Acceso en línea: | https://riunet.upv.es/handle/10251/150637 |
| Access Level: | acceso abierto |
| Palabra clave: | Microsphere Silicon Nanocavity Whispering gallery modes Super-Planckian Light source |
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Thermal Emission of Silicon at Near-Infrared Frequencies Mediated by Mie ResonancesFenollosa Esteve, Roberto|||0000-0003-2758-9823RAMIRO MANZANO, FERNANDOGARÍN ESCRIVÁ, MOISÉSAlcubilla, R.MicrosphereSiliconNanocavityWhispering gallery modesSuper-PlanckianLight source[EN] Planck's law constitutes one of the cornerstones in physics. It explains the well-known spectrum of an ideal blackbody consisting of a smooth curve, whose peak wavelength and intensity depend on the temperature of the body. This scenario changes drastically, however, when the size of the emitting object is comparable to the wavelength of the emitted radiation. Here we show that a silicon microsphere (2-3 mu m in diameter) heated to around 800 degrees C yields a thermal emission spectrum consisting of pronounced peaks that are associated with Mie resonances. We experimentally demonstrate in the near-infrared the existence of modes with an ultrahigh quality factor, Q, of 400, which is substantially higher than values reported so far, and set a new benchmark in the field of thermal emission. Simulations predict that the thermal response of the microspheres is very fast, about 15 mu s. Additionally, the possibility of achieving light emission above the Planck limit at some frequency ranges is envisaged.This work was supported by several projects of the Spanish Ministry of Economy and Competitiveness (MINECO), Severo Ochoa program for Centers of Excellence (SEV-2016-0683), MAT2015-69669-PM, ENE2013-49984-EXP, ENE2015-74009-JIN (cofunded by the European Regional Development Fund), and of the Spanish Science, Innovation and Universities, PGC2018-099744-B-100. F.R.-M. thanks the financial contribution of MINECO through the program for young researchers support, TEC 2015 2015-74405-JIN. The authors greatly acknowledge the contribution of Prof. Francisco Meseguer for both the fruitful discussions and the revision of the manuscript, and Prof. Marie Louise McCarrey for careful proofreading of the manuscript.American Chemical SocietyInstituto Universitario Mixto de Tecnología QuímicaEuropean Regional Development FundMinisterio de Economía y CompetitividadAgencia Estatal de InvestigaciónRepositorio Institucional de la Universitat Politècnica de València Riunet20192019-12-18journal articlehttp://purl.org/coar/resource_type/c_6501VoRhttp://purl.org/coar/version/c_970fb48d4fbd8a85info:eu-repo/semantics/articleapplication/pdfapplication/pdfhttps://riunet.upv.es/handle/10251/150637reponame:RiuNet. Repositorio Institucional de la Universitat Politécnica de Valénciainstname:Universitat Politècnica de València (UPV)InglésengAgencia Estatal de Investigación http://dx.doi.org/10.13039/501100011033 Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020 PGC2018-099744-B-I00 AMPLIFICACION DE LOS FENOMENOS OPTOELECTRONICOS EN MICROCAVIDADESMinisterio de Economía y Competitividad http://dx.doi.org/10.13039/501100003329 MAT2015-69669-P OPTOLECTRONICA EN NANOCAVIDADES DE ALTO INDICE DE REFRACCION. DEL SILICIO A LA PEROVSKITAMinisterio de Economía y Competitividad http://dx.doi.org/10.13039/501100003329 TEC2015-74405-JIN MICRO- Y NANO-CAVIDADES BASADAS EN PEROVSKITA HALOGENADA. CELULAS SOLARES Y EMISORES DE LUZMinisterio de Economía y Competitividad http://dx.doi.org/10.13039/501100003329 ENE2013-49984-EXP SUPERANDO EL CUERPO NEGRO. ABSORCION Y EMISION DE LUZ EN UNA MICROESFERA DE SILICIO.Ministerio de Economía y Competitividad http://dx.doi.org/10.13039/501100003329 ENE2015-74009-JIN HACIA LA OBTENCION DE MULTIPLES CELULAS MONOCRISTALINAS DE SILICIO CON 20% DE EFICIENCIA Y MENOS DE 20 µM DE GROSOR A PARTIR DE UNA UNICA OBLEA.Ministerio de Economía y Competitividad http://dx.doi.org/10.13039/501100003329 SEV-2016-0683open accesshttp://purl.org/coar/access_right/c_abf2Reserva de todos los derechoshttp://rightsstatements.org/vocab/InC/1.0/info:eu-repo/semantics/openAccessoai:riunet.upv.es:10251/1506372026-06-13T07:49:27Z |
| dc.title.none.fl_str_mv |
Thermal Emission of Silicon at Near-Infrared Frequencies Mediated by Mie Resonances |
| title |
Thermal Emission of Silicon at Near-Infrared Frequencies Mediated by Mie Resonances |
| spellingShingle |
Thermal Emission of Silicon at Near-Infrared Frequencies Mediated by Mie Resonances Fenollosa Esteve, Roberto|||0000-0003-2758-9823 Microsphere Silicon Nanocavity Whispering gallery modes Super-Planckian Light source |
| title_short |
Thermal Emission of Silicon at Near-Infrared Frequencies Mediated by Mie Resonances |
| title_full |
Thermal Emission of Silicon at Near-Infrared Frequencies Mediated by Mie Resonances |
| title_fullStr |
Thermal Emission of Silicon at Near-Infrared Frequencies Mediated by Mie Resonances |
| title_full_unstemmed |
Thermal Emission of Silicon at Near-Infrared Frequencies Mediated by Mie Resonances |
| title_sort |
Thermal Emission of Silicon at Near-Infrared Frequencies Mediated by Mie Resonances |
| dc.creator.none.fl_str_mv |
Fenollosa Esteve, Roberto|||0000-0003-2758-9823 RAMIRO MANZANO, FERNANDO GARÍN ESCRIVÁ, MOISÉS Alcubilla, R. |
| author |
Fenollosa Esteve, Roberto|||0000-0003-2758-9823 |
| author_facet |
Fenollosa Esteve, Roberto|||0000-0003-2758-9823 RAMIRO MANZANO, FERNANDO GARÍN ESCRIVÁ, MOISÉS Alcubilla, R. |
| author_role |
author |
| author2 |
RAMIRO MANZANO, FERNANDO GARÍN ESCRIVÁ, MOISÉS Alcubilla, R. |
| author2_role |
author author author |
| dc.contributor.none.fl_str_mv |
Instituto Universitario Mixto de Tecnología Química European Regional Development Fund Ministerio de Economía y Competitividad Agencia Estatal de Investigación Repositorio Institucional de la Universitat Politècnica de València Riunet |
| dc.subject.none.fl_str_mv |
Microsphere Silicon Nanocavity Whispering gallery modes Super-Planckian Light source |
| topic |
Microsphere Silicon Nanocavity Whispering gallery modes Super-Planckian Light source |
| description |
[EN] Planck's law constitutes one of the cornerstones in physics. It explains the well-known spectrum of an ideal blackbody consisting of a smooth curve, whose peak wavelength and intensity depend on the temperature of the body. This scenario changes drastically, however, when the size of the emitting object is comparable to the wavelength of the emitted radiation. Here we show that a silicon microsphere (2-3 mu m in diameter) heated to around 800 degrees C yields a thermal emission spectrum consisting of pronounced peaks that are associated with Mie resonances. We experimentally demonstrate in the near-infrared the existence of modes with an ultrahigh quality factor, Q, of 400, which is substantially higher than values reported so far, and set a new benchmark in the field of thermal emission. Simulations predict that the thermal response of the microspheres is very fast, about 15 mu s. Additionally, the possibility of achieving light emission above the Planck limit at some frequency ranges is envisaged. |
| publishDate |
2019 |
| dc.date.none.fl_str_mv |
2019 2019-12-18 |
| dc.type.none.fl_str_mv |
journal article http://purl.org/coar/resource_type/c_6501 VoR http://purl.org/coar/version/c_970fb48d4fbd8a85 |
| dc.type.openaire.fl_str_mv |
info:eu-repo/semantics/article |
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article |
| dc.identifier.none.fl_str_mv |
https://riunet.upv.es/handle/10251/150637 |
| url |
https://riunet.upv.es/handle/10251/150637 |
| dc.language.none.fl_str_mv |
Inglés eng |
| language_invalid_str_mv |
Inglés |
| language |
eng |
| dc.relation.none.fl_str_mv |
Agencia Estatal de Investigación http://dx.doi.org/10.13039/501100011033 Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020 PGC2018-099744-B-I00 AMPLIFICACION DE LOS FENOMENOS OPTOELECTRONICOS EN MICROCAVIDADES Ministerio de Economía y Competitividad http://dx.doi.org/10.13039/501100003329 MAT2015-69669-P OPTOLECTRONICA EN NANOCAVIDADES DE ALTO INDICE DE REFRACCION. DEL SILICIO A LA PEROVSKITA Ministerio de Economía y Competitividad http://dx.doi.org/10.13039/501100003329 TEC2015-74405-JIN MICRO- Y NANO-CAVIDADES BASADAS EN PEROVSKITA HALOGENADA. CELULAS SOLARES Y EMISORES DE LUZ Ministerio de Economía y Competitividad http://dx.doi.org/10.13039/501100003329 ENE2013-49984-EXP SUPERANDO EL CUERPO NEGRO. ABSORCION Y EMISION DE LUZ EN UNA MICROESFERA DE SILICIO. Ministerio de Economía y Competitividad http://dx.doi.org/10.13039/501100003329 ENE2015-74009-JIN HACIA LA OBTENCION DE MULTIPLES CELULAS MONOCRISTALINAS DE SILICIO CON 20% DE EFICIENCIA Y MENOS DE 20 µM DE GROSOR A PARTIR DE UNA UNICA OBLEA. Ministerio de Economía y Competitividad http://dx.doi.org/10.13039/501100003329 SEV-2016-0683 |
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open access http://purl.org/coar/access_right/c_abf2 Reserva de todos los derechos http://rightsstatements.org/vocab/InC/1.0/ |
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info:eu-repo/semantics/openAccess |
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open access http://purl.org/coar/access_right/c_abf2 Reserva de todos los derechos http://rightsstatements.org/vocab/InC/1.0/ |
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openAccess |
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application/pdf application/pdf |
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American Chemical Society |
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American Chemical Society |
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