Sub-10 nm resistless nanolithography for directed self-assembly of block copolymers
The creation of highly efficient guiding patterns for the directed self-Assembly of block copolymers by resistless nanolithography using atomic force microscopy (AFM) is demonstrated. It is shown that chemical patterns consisting of arrays of lines defined on a brush layer by AFM allow the alignment...
| Autores: | , , , , |
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| Formato: | artículo |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 2014 |
| País: | España |
| Recursos: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/131452 |
| Acesso em linha: | http://hdl.handle.net/10261/131452 |
| Access Level: | acceso abierto |
| Palavra-chave: | Atomic force microscopy Chemical guiding patterns Block copolymer self-assembly |
| Resumo: | The creation of highly efficient guiding patterns for the directed self-Assembly of block copolymers by resistless nanolithography using atomic force microscopy (AFM) is demonstrated. It is shown that chemical patterns consisting of arrays of lines defined on a brush layer by AFM allow the alignment of the blocks of lamella-forming polymers. The main advantage of this method relies on the capability to create high-resolution (sub-10 nm line-width) guiding patterns and the reduction of the number of process steps compared to the state-of-the-Art methods for creating guiding patterns by chemical surface modification. It is found that the guiding patterns induce the block alignment very efficiently, allowing the achievement of a density multiplication factor of 7 for block copolymers of 14 nm half-pitch, which is attributed to the combined effect of topographical and chemical modification. |
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