Cathodoluminescence study of ytterbium doped GaSb

b-doped GaSb ingots have been grown by the Bridgman method. The defect structure and compositional homogeneity of the crystals have been investigated by cathodoluminescence and X-ray microanalysis in the scanning electron microscope. The nature of the point defects has been found to depend on the po...

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Detalles Bibliográficos
Autores: Hidalgo Alcalde, Pedro, Méndez Martín, María Bianchi, Ruiz, C., Bermudez, V., Piqueras De Noriega, Francisco Javier, Dieguez, E.
Tipo de recurso: artículo
Fecha de publicación:2005
País:España
Institución:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/50949
Acceso en línea:https://hdl.handle.net/20.500.14352/50949
Access Level:acceso abierto
Palabra clave:538.9
Electrical-Properties
Gallium Antimonide
Crystals
Epitaxy
Física de materiales
id ES_f2a26fd2ee3fe85c506211ed7151fb83
oai_identifier_str oai:docta.ucm.es:20.500.14352/50949
network_acronym_str ES
network_name_str España
repository_id_str
spelling Cathodoluminescence study of ytterbium doped GaSbHidalgo Alcalde, PedroMéndez Martín, María BianchiRuiz, C.Bermudez, V.Piqueras De Noriega, Francisco JavierDieguez, E.538.9Electrical-PropertiesGallium AntimonideCrystalsEpitaxyFísica de materialesb-doped GaSb ingots have been grown by the Bridgman method. The defect structure and compositional homogeneity of the crystals have been investigated by cathodoluminescence and X-ray microanalysis in the scanning electron microscope. The nature of the point defects has been found to depend on the position along the growth axis. Doping with Yb has been found to reduce the luminescence intensity of GaSb and no infrared emission related to intra-ionic transitions of the Yb_(3+) ions has been detectedElsevier Science SaUniversidad Complutense de Madrid20052005-07-2520052005-07-25journal articlehttp://purl.org/coar/resource_type/c_6501info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/50949reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/509492026-06-02T12:44:21Z
dc.title.none.fl_str_mv Cathodoluminescence study of ytterbium doped GaSb
title Cathodoluminescence study of ytterbium doped GaSb
spellingShingle Cathodoluminescence study of ytterbium doped GaSb
Hidalgo Alcalde, Pedro
538.9
Electrical-Properties
Gallium Antimonide
Crystals
Epitaxy
Física de materiales
title_short Cathodoluminescence study of ytterbium doped GaSb
title_full Cathodoluminescence study of ytterbium doped GaSb
title_fullStr Cathodoluminescence study of ytterbium doped GaSb
title_full_unstemmed Cathodoluminescence study of ytterbium doped GaSb
title_sort Cathodoluminescence study of ytterbium doped GaSb
dc.creator.none.fl_str_mv Hidalgo Alcalde, Pedro
Méndez Martín, María Bianchi
Ruiz, C.
Bermudez, V.
Piqueras De Noriega, Francisco Javier
Dieguez, E.
author Hidalgo Alcalde, Pedro
author_facet Hidalgo Alcalde, Pedro
Méndez Martín, María Bianchi
Ruiz, C.
Bermudez, V.
Piqueras De Noriega, Francisco Javier
Dieguez, E.
author_role author
author2 Méndez Martín, María Bianchi
Ruiz, C.
Bermudez, V.
Piqueras De Noriega, Francisco Javier
Dieguez, E.
author2_role author
author
author
author
author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 538.9
Electrical-Properties
Gallium Antimonide
Crystals
Epitaxy
Física de materiales
topic 538.9
Electrical-Properties
Gallium Antimonide
Crystals
Epitaxy
Física de materiales
description b-doped GaSb ingots have been grown by the Bridgman method. The defect structure and compositional homogeneity of the crystals have been investigated by cathodoluminescence and X-ray microanalysis in the scanning electron microscope. The nature of the point defects has been found to depend on the position along the growth axis. Doping with Yb has been found to reduce the luminescence intensity of GaSb and no infrared emission related to intra-ionic transitions of the Yb_(3+) ions has been detected
publishDate 2005
dc.date.none.fl_str_mv 2005
2005-07-25
2005
2005-07-25
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/50949
url https://hdl.handle.net/20.500.14352/50949
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Elsevier Science Sa
publisher.none.fl_str_mv Elsevier Science Sa
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869424300111429632
score 15,301603

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