Out-of-Plane Transport of 1T-TaS2/Graphene-Based van der Waals Heterostructures
Due to their anisotropy, layered materials are excellent candidates for studying the interplay between the inplane and out-of-plane entanglement in strongly correlated systems. A relevant example is provided by 1T-TaS2, which exhibits a multifaceted electronic and magnetic scenario due to the existe...
| Autores: | , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2021 |
| País: | España |
| Institución: | Universidad del País Vasco |
| Repositorio: | Addi. Archivo Digital para la Docencia y la Investigación |
| OAI Identifier: | oai:addi.ehu.eus:10810/53494 |
| Acceso en línea: | http://hdl.handle.net/10810/53494 |
| Access Level: | acceso abierto |
| Palabra clave: | 2D materials Van der Waals heterostructures quantum materials electrical properties DFT calculations charge-density waves transition-metal dichalcogenides phase-transitions 1T-TAS2 statemodel |
| Sumario: | Due to their anisotropy, layered materials are excellent candidates for studying the interplay between the inplane and out-of-plane entanglement in strongly correlated systems. A relevant example is provided by 1T-TaS2, which exhibits a multifaceted electronic and magnetic scenario due to the existence of several charge density wave (CDW) configurations. It includes quantum hidden phases, super-conductivity and exotic quantum spin liquid (QSL) states, which are highly dependent on the out-of-plane stacking of the CDW. In this system, the interlayer stacking of the CDW is crucial for interpreting the underlying electronic and magnetic phase diagram. Here, atomically thin-layers of 1T-TaS2 are integrated in vertical van der Waals heterostructures based on few-layers graphene contacts and their electrical transport properties are measured. Different activation energies in the conductance and a gap at the Fermi level are clearly observed. Our experimental findings are supported by fully self-consistent DFT+U calculations, which evidence the presence of an energy gap in the few-layer limit, not necessarily coming from the formation of out-of-plane spin-paired bilayers at low temperatures, as previously proposed for the bulk. These results highlight dimensionality as a key effect for understanding quantum materials as 1T-TaS2 , enabling the possible experimental realization of low-dimensional QSLs. |
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