Antenna on chip (AoC) design using metasurface and SIW technologies for THz wireless applications
This paper presents the design of a high-performance 0.45-0.50 THz antenna on chip (AoC) for fabrication on a 100-micron GaAs substrate. The antenna is based on metasurface and substrate-integrated waveguide (SIW) technologies. It is constituted from seven stacked layers consisting of copper patch-s...
| Autores: | , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2021 |
| País: | España |
| Institución: | Universidad San Jorge (USJ) |
| Repositorio: | Academica-e. Repositorio Institucional de la Universidad Pública de Navarra |
| OAI Identifier: | oai:academica-e.unavarra.es:2454/41724 |
| Acceso en línea: | https://hdl.handle.net/2454/41724 |
| Access Level: | acceso abierto |
| Palabra clave: | Antenna on chip (AoC) Metasurface Terahertz (THz) Substrate integrated waveguide (SIW) Gallium arsenide (GaAs) |
| Sumario: | This paper presents the design of a high-performance 0.45-0.50 THz antenna on chip (AoC) for fabrication on a 100-micron GaAs substrate. The antenna is based on metasurface and substrate-integrated waveguide (SIW) technologies. It is constituted from seven stacked layers consisting of copper patch-silicon oxide-feedline-silicon oxide-aluminium-GaAs-copper ground. The top layer consists of a 2 x 4 array of rectangular metallic patches with a row of subwavelength circular slots to transform the array into a metasurface. This essentially enlarges the effective aperture area of the antenna. The antenna is excited using a coplanar waveguide feedline that is sandwiched between the two silicon oxide layers below the patch layer. The proposed antenna structure reduces substrate loss and surface waves. The AoC has dimensions of 0.8 x 0.8 x 0.13 mm(3). The results show that the proposed structure greatly enhances the antenna's gain and radiation efficiency, and this is achieved without compromising its physical size. The antenna exhibits an average gain and efficiency of 6.5 dBi and 65%, respectively, which makes it a promising candidate for emerging terahertz applications. |
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