Optical ridge waveguides in 4H-SiC single crystal produced by combination of carbon ion irradiation and femtosecond laser ablation

Optical ridge waveguides were fabricated in 4H-SiC single crystal by combination of 15 MeV C5+ ion irradiation and femtosecond laser ablation. The near-field modal intensity distributions exhibit the well-confined light propagation in the waveguides. A propagation loss as low as 5.1 dB/cm has been a...

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Detalles Bibliográficos
Autores: Luan, Qingfang, Jia, Yuechen, Wang, Yutian, Akhmadaliev, Shavkat, Zhou, Shengqiang, Vázquez de Aldana, Javier R., Tan, Yang, Chen, Feng
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2014
País:España
Institución:Universidad de Salamanca (USAL)
Repositorio:GREDOS. Repositorio Institucional de la Universidad de Salamanca
OAI Identifier:oai:gredos.usal.es:10366/146639
Acceso en línea:http://hdl.handle.net/10366/146639
Access Level:acceso abierto
Palabra clave:Effective refractive index
Electric fields
Laser ablation
Light propagation
Planar waveguides
Raman scattering
Descripción
Sumario:Optical ridge waveguides were fabricated in 4H-SiC single crystal by combination of 15 MeV C5+ ion irradiation and femtosecond laser ablation. The near-field modal intensity distributions exhibit the well-confined light propagation in the waveguides. A propagation loss as low as 5.1 dB/cm has been achieved at 632.8 nm for the ridge waveguide. The investigation of confocal micro-Raman spectra suggests partial transition of 4H-SiC to 6H-SiC in the irradiated region

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