A Novel Transformerless Soft-Switching Symmetrical Bipolar Power Converter: Analysis, Design, Simulation and Validation

In order to obtain acceptable efficiencies, hard-switching techniques and the converters that implement them must operate at relatively low frequencies (tens of kilohertz), which translate into converters of large size, weight, and volume, and therefore higher cost. To improve these characteristics,...

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Detalles Bibliográficos
Autores: Díaz Martín, Cristian, Durán Aranda, Eladio, Alves da Silva, Fernando, André, Sergio
Tipo de recurso: artículo
Fecha de publicación:2025
País:España
Institución:Universidad de Huelva (UHU)
Repositorio:Arias Montano. Repositorio Institucional de la Universidad de Huelva
Idioma:inglés
OAI Identifier:oai:ariasmontano.uhu.es:10272/25361
Acceso en línea:https://hdl.handle.net/10272/25361
Access Level:acceso abierto
Palabra clave:Zero voltage switching (ZVS)
Soft-switching
High-frequency power converter
Transformerless
GaN FET
Bipolar output
Symmetric outputs
3307 Tecnología Electrónica
3306 Ingeniería y Tecnología Eléctricas
Descripción
Sumario:In order to obtain acceptable efficiencies, hard-switching techniques and the converters that implement them must operate at relatively low frequencies (tens of kilohertz), which translate into converters of large size, weight, and volume, and therefore higher cost. To improve these characteristics, this work introduces a new transformerless MHz-range DC–DC converter that provides symmetrical bipolar outputs. The developed topology uses a single grounded switch, achieves soft switching (ZVS) over a wide load range, and does not require the use of floating or isolated controllers, reducing cost, size, and complexity. The output voltages are self-regulated to maintain the same value, ensuring balanced bipolar operation. A comprehensive analysis, design, sizing, simulation, implementation and testing are provided on a 150Wprototype operating at a switching frequency of 1 MHz, with step-up and step-down capability and implemented with GaN FET. The evaluated configuration shows an efficiency close to 90% and high power density, making it suitable for compact designs in a variety of applications requiring reliable power management and high efficiency such as lighting, electric vehicles, or auxiliary power supplies.