3D field confinement in the near-field interaction between graphene and Si/SiGe axially heterostructured NWs

Producción Científica

Detalles Bibliográficos
Autores: Pura Ruiz, José Luis, Balci, Osman, Baron, Thierry, Jiménez López, Juan Ignacio
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2021
País:España
Institución:Universidad de Valladolid
Repositorio:UVaDOC. Repositorio Documental de la Universidad de Valladolid
OAI Identifier:oai:uvadoc.uva.es:10324/49429
Acceso en línea:https://doi.org/10.1063/5.0050049
https://uvadoc.uva.es/handle/10324/49429
Access Level:acceso abierto
Palabra clave:Optoelectronic devices
Dispositivos optoelectrónicos
Semiconductor nanostructures
Nanoestructuras semiconductoras
Raman spectroscopy
Espectroscopia Raman
Graphene
Grafeno
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spelling 3D field confinement in the near-field interaction between graphene and Si/SiGe axially heterostructured NWsPura Ruiz, José LuisBalci, OsmanBaron, ThierryJiménez López, Juan IgnacioOptoelectronic devicesDispositivos optoelectrónicosSemiconductor nanostructuresNanoestructuras semiconductorasRaman spectroscopyEspectroscopia RamanGrapheneGrafenoProducción CientíficaABSTRACT Interest in the integration of graphene and semiconductor nanowires (NWs) increased dramatically during the last two decades along with the overwhelming development of graphene technology. The possibility of combining the countless properties of graphene with the singular optical behavior of semiconductor NWs leads the way to the design of unique photonic nanodevices. In this work, the optical response of Si/SiGe axially heterostructured NWs deposited over a graphene monolayer is investigated. The results demonstrate the enhancement of the graphene Raman signal under the influence of the NW. Moreover, the presence of an axial heterojunction in the NW is shown to locally hinder this enhancement through the full confinement of the incident electromagnetic field inside the NW body around the heterojunction. This complex interaction could be the basis for near-field probes for molecules or 2D materials, and optoelectronic devices including graphene/NW interfaces.Junta de Castilla y León (project VA283P18)Gobierno de España (grants ENE 2014-56069-C4-4-R and FPU14/00916)AIP Publishing2021info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionapplication/pdfhttps://doi.org/10.1063/5.0050049https://uvadoc.uva.es/handle/10324/49429reponame:UVaDOC. Repositorio Documental de la Universidad de Valladolidinstname:Universidad de ValladolidIngléshttps://aip.scitation.org/doi/10.1063/5.0050049info:eu-repo/semantics/openAccesshttp://creativecommons.org/licenses/by-nc-nd/4.0/oai:uvadoc.uva.es:10324/494292026-06-13T12:44:47Z
dc.title.none.fl_str_mv 3D field confinement in the near-field interaction between graphene and Si/SiGe axially heterostructured NWs
title 3D field confinement in the near-field interaction between graphene and Si/SiGe axially heterostructured NWs
spellingShingle 3D field confinement in the near-field interaction between graphene and Si/SiGe axially heterostructured NWs
Pura Ruiz, José Luis
Optoelectronic devices
Dispositivos optoelectrónicos
Semiconductor nanostructures
Nanoestructuras semiconductoras
Raman spectroscopy
Espectroscopia Raman
Graphene
Grafeno
title_short 3D field confinement in the near-field interaction between graphene and Si/SiGe axially heterostructured NWs
title_full 3D field confinement in the near-field interaction between graphene and Si/SiGe axially heterostructured NWs
title_fullStr 3D field confinement in the near-field interaction between graphene and Si/SiGe axially heterostructured NWs
title_full_unstemmed 3D field confinement in the near-field interaction between graphene and Si/SiGe axially heterostructured NWs
title_sort 3D field confinement in the near-field interaction between graphene and Si/SiGe axially heterostructured NWs
dc.creator.none.fl_str_mv Pura Ruiz, José Luis
Balci, Osman
Baron, Thierry
Jiménez López, Juan Ignacio
author Pura Ruiz, José Luis
author_facet Pura Ruiz, José Luis
Balci, Osman
Baron, Thierry
Jiménez López, Juan Ignacio
author_role author
author2 Balci, Osman
Baron, Thierry
Jiménez López, Juan Ignacio
author2_role author
author
author
dc.subject.none.fl_str_mv Optoelectronic devices
Dispositivos optoelectrónicos
Semiconductor nanostructures
Nanoestructuras semiconductoras
Raman spectroscopy
Espectroscopia Raman
Graphene
Grafeno
topic Optoelectronic devices
Dispositivos optoelectrónicos
Semiconductor nanostructures
Nanoestructuras semiconductoras
Raman spectroscopy
Espectroscopia Raman
Graphene
Grafeno
description Producción Científica
publishDate 2021
dc.date.none.fl_str_mv 2021
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv https://doi.org/10.1063/5.0050049
https://uvadoc.uva.es/handle/10324/49429
url https://doi.org/10.1063/5.0050049
https://uvadoc.uva.es/handle/10324/49429
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv https://aip.scitation.org/doi/10.1063/5.0050049
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
http://creativecommons.org/licenses/by-nc-nd/4.0/
eu_rights_str_mv openAccess
rights_invalid_str_mv http://creativecommons.org/licenses/by-nc-nd/4.0/
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv AIP Publishing
publisher.none.fl_str_mv AIP Publishing
dc.source.none.fl_str_mv reponame:UVaDOC. Repositorio Documental de la Universidad de Valladolid
instname:Universidad de Valladolid
instname_str Universidad de Valladolid
reponame_str UVaDOC. Repositorio Documental de la Universidad de Valladolid
collection UVaDOC. Repositorio Documental de la Universidad de Valladolid
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15.300719

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