Operating Mechanism Principles and Advancements for Halide Perovskite-Based Memristors and Neuromorphic Devices

With the advent of the generation of artificial intelligence (AI) based on big data-processing technologies, next-generation memristor and memristive neuromorphic devices have been actively studied with great interest to overcome the von Neumann bottleneck limits. Among various candidates, halide pe...

Descripción completa

Detalles Bibliográficos
Autores: Kim, So-Yeon, Zhang, Heyi, Rubio-Magnieto, Jenifer
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2024
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/385046
Acceso en línea:http://hdl.handle.net/10261/385046
Access Level:acceso abierto
id ES_ecfef3028eeec00170cb8a64f55d6597
oai_identifier_str oai:digital.csic.es:10261/385046
network_acronym_str ES
network_name_str España
repository_id_str
spelling Operating Mechanism Principles and Advancements for Halide Perovskite-Based Memristors and Neuromorphic DevicesKim, So-YeonZhang, HeyiRubio-Magnieto, JeniferWith the advent of the generation of artificial intelligence (AI) based on big data-processing technologies, next-generation memristor and memristive neuromorphic devices have been actively studied with great interest to overcome the von Neumann bottleneck limits. Among various candidates, halide perovskites (HPs) have been in the spotlight as potential candidates for these devices due to their unique switching characteristics with low energy consumption and flexible integration compatibility across various sources for scalability. We outline the characteristics and operating principles of HP-based memristors and their neuromorphic devices. We explain filamentary- and interface-type switching according to the type of conducting pathway occurring inside the active HP layer and the operating mechanisms depending on the species that make up this conducting pathway. We summarize the types and mechanisms of current changes beneficial for neuromorphic device applications and finally organize various suggested analysis tools and physical models to enable experimental determination of switching mechanisms from various perspectives.This work was funded by the European Research Council (ERC) via Horizon Europe Advanced Grant, grant agreement no. 101097688 (“PeroSpiker”). Funding for open access charge: CRUE-Universitat Politècnica de València.ACS PublicationsEuropean Research CouncilConsejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]2025202520242025info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_dcae04bcPublisher's versioninfo:eu-repo/semantics/publishedVersionhttp://hdl.handle.net/10261/385046reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Inglés#PLACEHOLDER_PARENT_METADATA_VALUE#info:eu-repo/grantAgreement/ERC/H2020/101097688http://dx.doi.org/10.1021/acs.jpclett.4c02170Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/3850462026-05-22T06:33:51Z
dc.title.none.fl_str_mv Operating Mechanism Principles and Advancements for Halide Perovskite-Based Memristors and Neuromorphic Devices
title Operating Mechanism Principles and Advancements for Halide Perovskite-Based Memristors and Neuromorphic Devices
spellingShingle Operating Mechanism Principles and Advancements for Halide Perovskite-Based Memristors and Neuromorphic Devices
Kim, So-Yeon
title_short Operating Mechanism Principles and Advancements for Halide Perovskite-Based Memristors and Neuromorphic Devices
title_full Operating Mechanism Principles and Advancements for Halide Perovskite-Based Memristors and Neuromorphic Devices
title_fullStr Operating Mechanism Principles and Advancements for Halide Perovskite-Based Memristors and Neuromorphic Devices
title_full_unstemmed Operating Mechanism Principles and Advancements for Halide Perovskite-Based Memristors and Neuromorphic Devices
title_sort Operating Mechanism Principles and Advancements for Halide Perovskite-Based Memristors and Neuromorphic Devices
dc.creator.none.fl_str_mv Kim, So-Yeon
Zhang, Heyi
Rubio-Magnieto, Jenifer
author Kim, So-Yeon
author_facet Kim, So-Yeon
Zhang, Heyi
Rubio-Magnieto, Jenifer
author_role author
author2 Zhang, Heyi
Rubio-Magnieto, Jenifer
author2_role author
author
dc.contributor.none.fl_str_mv European Research Council
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
description With the advent of the generation of artificial intelligence (AI) based on big data-processing technologies, next-generation memristor and memristive neuromorphic devices have been actively studied with great interest to overcome the von Neumann bottleneck limits. Among various candidates, halide perovskites (HPs) have been in the spotlight as potential candidates for these devices due to their unique switching characteristics with low energy consumption and flexible integration compatibility across various sources for scalability. We outline the characteristics and operating principles of HP-based memristors and their neuromorphic devices. We explain filamentary- and interface-type switching according to the type of conducting pathway occurring inside the active HP layer and the operating mechanisms depending on the species that make up this conducting pathway. We summarize the types and mechanisms of current changes beneficial for neuromorphic device applications and finally organize various suggested analysis tools and physical models to enable experimental determination of switching mechanisms from various perspectives.
publishDate 2024
dc.date.none.fl_str_mv 2024
2025
2025
2025
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_dcae04bc
Publisher's version
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/385046
url http://hdl.handle.net/10261/385046
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv #PLACEHOLDER_PARENT_METADATA_VALUE#
info:eu-repo/grantAgreement/ERC/H2020/101097688
http://dx.doi.org/10.1021/acs.jpclett.4c02170
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv ACS Publications
publisher.none.fl_str_mv ACS Publications
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869423389029957632
score 15,81155

Similares en LA Referencia