Diseño, fabricación y caracterización de dispositivos de conmutación resistiva basados en estructuras TiN/Ti/HfO2/W
[EN] In recent years, there has been a great interest in resistive switching devices due to their potential to revolutionize the world of electronics. This thesis focuses on the design, fabrication and characterisation of this type of devices with a specific combination of materials, TiN/Ti/HfO2/W,...
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| Tipo de recurso: | tesis doctoral |
| Fecha de publicación: | 2021 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/274789 |
| Acceso en línea: | http://hdl.handle.net/10261/274789 |
| Access Level: | acceso abierto |
| Palabra clave: | Conmutación resistiva HfO2 Conducción filamentaria |
| Sumario: | [EN] In recent years, there has been a great interest in resistive switching devices due to their potential to revolutionize the world of electronics. This thesis focuses on the design, fabrication and characterisation of this type of devices with a specific combination of materials, TiN/Ti/HfO2/W, which allows full integration with current nano and microelectronic fabrication technologies and shows bipolar resistive switching that is based on the creation and partial dissolution of nanometric conductive filaments. After a first chapter in which the phenomenon of resistive switching and the physical mechanisms that make it possible are introduced, in the second chapter the fabrication process to obtain this type of devices with two different constructive configurations, cross-point and isolated, is described. Subsequently, after showing the fabricated devices and their physical characterisation, the experimental results of their electrical behaviour are indicated. During the next two chapters, the bipolar resistive switching characteristics exhibited by these devices are studied by applying voltage sweep cycles by means of ramps, and train pulses cycles, either in sequences under constant electrical parameters (chapter 3) or automatically modified, cycle by cycle, to evaluate their multilevel response (chapter 4). Next, the electrical behaviour of the anti-series association of two devices is analysed, a combination which gives rise to the so-called phenomenon complementary resistive switching (chapter 5). To complete the study of these devices, in chapter 6 the physical nature of their conducting filament is investigated by means of a new methodology that allows to locate and classify them in order to find out the electrical state of the device before carrying out the experimental procedure. Then, in chapter 7 the design of new photolithographic masks is presented which permit the fabrication of new devices, both simple and complex (with two or more MIM cells per device), using three types of configuration: cross-point, isolated and isolated cross-point, which is a combination of the first two. In addition, the results of the physical and electrical characterisation of these new devices are showed too. Finally, in chapter 8, the most relevant conclusions of the results obtained in the development of the thesis are summarized. |
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