Electronic Supplementary information: Tetrahedral Tilting and Oxygen Vacancy Stabilization and Migration in La1-xSr2+x(GaO4)O1-0.5x Mixed Electronic/Oxide Ionic Conductors

SEM image and EDS elemental mapping, NPD pattern refinement, Rietveld analysis of the XRD and NPD patterns, VTXRD data, Arrhenius plots, XRD and NPD patterns recorded for La0.8Sr2.2(GaO4)O0.9 systems exposed to humid atmospheres, calculated isosurfaces, calculated MSDs, Buckingham interatomic potent...

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Detalles Bibliográficos
Autores: Li, Jiachen, Yang, Li, Xu, Jungu, Fernández-Carrión, Alberto J., Kuang, Xiaojun
Tipo de recurso: conjunto de datos
Fecha de publicación:2022
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/416836
Acceso en línea:http://hdl.handle.net/10261/416836
Access Level:acceso abierto
Palabra clave:Tetragonal space group
Proton ionic conduction
Oxygen vacancy stabilization
Oxygen vacancies arise
Diffraction methods indicate
Electrical conduction properties
Oxide ionic conductors
Ionic migration mechanism
Tetrahedral tilting
Electrical features
Biochemistry
Microbiology
Descripción
Sumario:SEM image and EDS elemental mapping, NPD pattern refinement, Rietveld analysis of the XRD and NPD patterns, VTXRD data, Arrhenius plots, XRD and NPD patterns recorded for La0.8Sr2.2(GaO4)O0.9 systems exposed to humid atmospheres, calculated isosurfaces, calculated MSDs, Buckingham interatomic potential and shell model parameters, calculated and experimental crystal structures, refined atomic coordinates and ADPs from NPD data, and interatomic distances obtained from NPD data