Self-interference of charge carriers in ferromagnetic SrRuO3

We report a systematic study of the low-temperature electrical conductivity in a series of SrRuO3 epitaxial thin films. At relatively high temperature the films display the conventional metallic behavior. However, a well-defined resistivity minimum appears at low temperature. This temperature depend...

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Detalhes bibliográficos
Autores: Herranz Casabona, Gervasi, Sánchez Barrera, Florencio, Martínez Perea, Benjamin, Fontcuberta i Griñó, Josep, García-Cuenca Varona, María Victoria, Ferrater Martorell, Cèsar, Varela Fernández, Manuel, 1956-
Formato: artículo
Estado:Versión publicada
Fecha de publicación:2004
País:España
Recursos:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
Repositorio:Recercat. Dipósit de la Recerca de Catalunya
OAI Identifier:oai:recercat.cat:2445/24810
Acesso em linha:https://hdl.handle.net/2445/24810
Access Level:acceso abierto
Palavra-chave:Ferromagnetisme
Conductivitat elèctrica
Pel·lícules fines
Ferromagnetism
Electric conductivity
Thin films
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spelling Self-interference of charge carriers in ferromagnetic SrRuO3Herranz Casabona, GervasiSánchez Barrera, FlorencioMartínez Perea, BenjaminFontcuberta i Griñó, JosepGarcía-Cuenca Varona, María VictoriaFerrater Martorell, CèsarVarela Fernández, Manuel, 1956-FerromagnetismeConductivitat elèctricaPel·lícules finesFerromagnetismElectric conductivityThin filmsWe report a systematic study of the low-temperature electrical conductivity in a series of SrRuO3 epitaxial thin films. At relatively high temperature the films display the conventional metallic behavior. However, a well-defined resistivity minimum appears at low temperature. This temperature dependence can be well described in a weak localization scenario: the resistivity minimum arising from the competition of electronic self-interference effects and the normal metallic character. By appropriate selection of the film growth conditions, we have been able to modify the mean-free path of itinerant carriers and thus to tune the relative strength of the quantum effects. We show that data can be quantitatively described by available theoretical models.American Institute of Physics2012201220042012info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersion3 p.application/pdfhttps://hdl.handle.net/2445/24810Articles publicats en revistes (Física Aplicada)reponame:Recercat. Dipósit de la Recerca de Catalunyainstname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)InglésReproducció del document publicat a: http://dx.doi.org/10.1063/1.1682785Journal of Applied Physics, 2004, vol. 95, p. 7213-7215http://dx.doi.org/10.1063/1.1682785(c) American Institute of Physics, 2004info:eu-repo/semantics/openAccessoai:recercat.cat:2445/248102026-05-29T05:05:01Z
dc.title.none.fl_str_mv Self-interference of charge carriers in ferromagnetic SrRuO3
title Self-interference of charge carriers in ferromagnetic SrRuO3
spellingShingle Self-interference of charge carriers in ferromagnetic SrRuO3
Herranz Casabona, Gervasi
Ferromagnetisme
Conductivitat elèctrica
Pel·lícules fines
Ferromagnetism
Electric conductivity
Thin films
title_short Self-interference of charge carriers in ferromagnetic SrRuO3
title_full Self-interference of charge carriers in ferromagnetic SrRuO3
title_fullStr Self-interference of charge carriers in ferromagnetic SrRuO3
title_full_unstemmed Self-interference of charge carriers in ferromagnetic SrRuO3
title_sort Self-interference of charge carriers in ferromagnetic SrRuO3
dc.creator.none.fl_str_mv Herranz Casabona, Gervasi
Sánchez Barrera, Florencio
Martínez Perea, Benjamin
Fontcuberta i Griñó, Josep
García-Cuenca Varona, María Victoria
Ferrater Martorell, Cèsar
Varela Fernández, Manuel, 1956-
author Herranz Casabona, Gervasi
author_facet Herranz Casabona, Gervasi
Sánchez Barrera, Florencio
Martínez Perea, Benjamin
Fontcuberta i Griñó, Josep
García-Cuenca Varona, María Victoria
Ferrater Martorell, Cèsar
Varela Fernández, Manuel, 1956-
author_role author
author2 Sánchez Barrera, Florencio
Martínez Perea, Benjamin
Fontcuberta i Griñó, Josep
García-Cuenca Varona, María Victoria
Ferrater Martorell, Cèsar
Varela Fernández, Manuel, 1956-
author2_role author
author
author
author
author
author
dc.subject.none.fl_str_mv Ferromagnetisme
Conductivitat elèctrica
Pel·lícules fines
Ferromagnetism
Electric conductivity
Thin films
topic Ferromagnetisme
Conductivitat elèctrica
Pel·lícules fines
Ferromagnetism
Electric conductivity
Thin films
description We report a systematic study of the low-temperature electrical conductivity in a series of SrRuO3 epitaxial thin films. At relatively high temperature the films display the conventional metallic behavior. However, a well-defined resistivity minimum appears at low temperature. This temperature dependence can be well described in a weak localization scenario: the resistivity minimum arising from the competition of electronic self-interference effects and the normal metallic character. By appropriate selection of the film growth conditions, we have been able to modify the mean-free path of itinerant carriers and thus to tune the relative strength of the quantum effects. We show that data can be quantitatively described by available theoretical models.
publishDate 2004
dc.date.none.fl_str_mv 2004
2012
2012
2012
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/2445/24810
url https://hdl.handle.net/2445/24810
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Reproducció del document publicat a: http://dx.doi.org/10.1063/1.1682785
Journal of Applied Physics, 2004, vol. 95, p. 7213-7215
http://dx.doi.org/10.1063/1.1682785
dc.rights.none.fl_str_mv (c) American Institute of Physics, 2004
info:eu-repo/semantics/openAccess
rights_invalid_str_mv (c) American Institute of Physics, 2004
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 3 p.
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv Articles publicats en revistes (Física Aplicada)
reponame:Recercat. Dipósit de la Recerca de Catalunya
instname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
instname_str Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
reponame_str Recercat. Dipósit de la Recerca de Catalunya
collection Recercat. Dipósit de la Recerca de Catalunya
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,198674

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