Switchable optically active schottky barrier in La_(0.7)Sr(0.3)MnO_3/BaTiO_3/ITO ferroelectric tunnel junction

One of the most desirable attributes of non-volatile memories and memristors is a fast and non-destructive read out of their resistive state. Prototypical ferroelectric (FE) memories use the bulk photovoltaic response associated to the polarization of FE films to address this requirement by opticall...

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Autores: Rivera Calzada, Alberto Carlos, Gallego Toledo, Fernando, Kalcheim, Yoav, Salev, Pavel, Valle, Javier del, Tenreiro Villar, Isabel, León Yebra, Carlos, Santamaría Sánchez-Barriga, Jacobo, Schuller, Ivan K.
Tipo de recurso: artículo
Fecha de publicación:2021
País:España
Institución:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/8157
Acceso en línea:https://hdl.handle.net/20.500.14352/8157
Access Level:acceso abierto
Palabra clave:538.9
Nonvolatile memory
Electroresistance
Films
Transition
Nanoscale
Ferroelectric tunnel junctions
Optical resistive sensing
Photovoltaic effect
Resistive switching
Schottky barrier
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
id ES_e91cfcc9e239149b57f5f45be1bdb565
oai_identifier_str oai:docta.ucm.es:20.500.14352/8157
network_acronym_str ES
network_name_str España
repository_id_str
spelling Switchable optically active schottky barrier in La_(0.7)Sr(0.3)MnO_3/BaTiO_3/ITO ferroelectric tunnel junctionRivera Calzada, Alberto CarlosGallego Toledo, FernandoKalcheim, YoavSalev, PavelValle, Javier delTenreiro Villar, IsabelLeón Yebra, CarlosSantamaría Sánchez-Barriga, JacoboSchuller, Ivan K.538.9Nonvolatile memoryElectroresistanceFilmsTransitionNanoscaleFerroelectric tunnel junctionsOptical resistive sensingPhotovoltaic effectResistive switchingSchottky barrierFísica de materialesFísica del estado sólido2211 Física del Estado SólidoOne of the most desirable attributes of non-volatile memories and memristors is a fast and non-destructive read out of their resistive state. Prototypical ferroelectric (FE) memories use the bulk photovoltaic response associated to the polarization of FE films to address this requirement by optically sensing binary memory cells. A more advanced type of non-volatile memories is FE tunnel junctions (FTJs). They feature resistive state ratios R_High/R_Low up to 10^6, with a continuum of resistive states accessible, making them promising candidates for neuromorphic computing applications. A novel approach is presented to achieve the optical sensing of the resistive state in a La_(0.7)Sr_(0.3)MnO_3/BaTiO_3/ITO FTJ, by using the Schottky barrier forming in the La_(0.7)Sr_(0.3)MnO_3/BaTiO_3/ITO interface to dramatically enhance the optical response of the 5 nm BaTiO3 (BTO) barrier. Illumination with UV light exceeding the BTO bandgap through the top transparent ITO electrode generates a photovoltaic response in the R_High state, with an open circuit voltage V_oc of 400 mV at 20 K, enabling the optical sensing of the resistive state. In the R_Low state, the Schottky barrier is removed and the photoresponse disappears.WileyUniversidad Complutense de Madrid20212021-05-1320212021-05-13journal articlehttp://purl.org/coar/resource_type/c_6501info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/8157reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2Atribución-NoComercial 3.0 Españahttps://creativecommons.org/licenses/by-nc/3.0/es/info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/81572026-06-02T12:44:21Z
dc.title.none.fl_str_mv Switchable optically active schottky barrier in La_(0.7)Sr(0.3)MnO_3/BaTiO_3/ITO ferroelectric tunnel junction
title Switchable optically active schottky barrier in La_(0.7)Sr(0.3)MnO_3/BaTiO_3/ITO ferroelectric tunnel junction
spellingShingle Switchable optically active schottky barrier in La_(0.7)Sr(0.3)MnO_3/BaTiO_3/ITO ferroelectric tunnel junction
Rivera Calzada, Alberto Carlos
538.9
Nonvolatile memory
Electroresistance
Films
Transition
Nanoscale
Ferroelectric tunnel junctions
Optical resistive sensing
Photovoltaic effect
Resistive switching
Schottky barrier
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
title_short Switchable optically active schottky barrier in La_(0.7)Sr(0.3)MnO_3/BaTiO_3/ITO ferroelectric tunnel junction
title_full Switchable optically active schottky barrier in La_(0.7)Sr(0.3)MnO_3/BaTiO_3/ITO ferroelectric tunnel junction
title_fullStr Switchable optically active schottky barrier in La_(0.7)Sr(0.3)MnO_3/BaTiO_3/ITO ferroelectric tunnel junction
title_full_unstemmed Switchable optically active schottky barrier in La_(0.7)Sr(0.3)MnO_3/BaTiO_3/ITO ferroelectric tunnel junction
title_sort Switchable optically active schottky barrier in La_(0.7)Sr(0.3)MnO_3/BaTiO_3/ITO ferroelectric tunnel junction
dc.creator.none.fl_str_mv Rivera Calzada, Alberto Carlos
Gallego Toledo, Fernando
Kalcheim, Yoav
Salev, Pavel
Valle, Javier del
Tenreiro Villar, Isabel
León Yebra, Carlos
Santamaría Sánchez-Barriga, Jacobo
Schuller, Ivan K.
author Rivera Calzada, Alberto Carlos
author_facet Rivera Calzada, Alberto Carlos
Gallego Toledo, Fernando
Kalcheim, Yoav
Salev, Pavel
Valle, Javier del
Tenreiro Villar, Isabel
León Yebra, Carlos
Santamaría Sánchez-Barriga, Jacobo
Schuller, Ivan K.
author_role author
author2 Gallego Toledo, Fernando
Kalcheim, Yoav
Salev, Pavel
Valle, Javier del
Tenreiro Villar, Isabel
León Yebra, Carlos
Santamaría Sánchez-Barriga, Jacobo
Schuller, Ivan K.
author2_role author
author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 538.9
Nonvolatile memory
Electroresistance
Films
Transition
Nanoscale
Ferroelectric tunnel junctions
Optical resistive sensing
Photovoltaic effect
Resistive switching
Schottky barrier
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
topic 538.9
Nonvolatile memory
Electroresistance
Films
Transition
Nanoscale
Ferroelectric tunnel junctions
Optical resistive sensing
Photovoltaic effect
Resistive switching
Schottky barrier
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
description One of the most desirable attributes of non-volatile memories and memristors is a fast and non-destructive read out of their resistive state. Prototypical ferroelectric (FE) memories use the bulk photovoltaic response associated to the polarization of FE films to address this requirement by optically sensing binary memory cells. A more advanced type of non-volatile memories is FE tunnel junctions (FTJs). They feature resistive state ratios R_High/R_Low up to 10^6, with a continuum of resistive states accessible, making them promising candidates for neuromorphic computing applications. A novel approach is presented to achieve the optical sensing of the resistive state in a La_(0.7)Sr_(0.3)MnO_3/BaTiO_3/ITO FTJ, by using the Schottky barrier forming in the La_(0.7)Sr_(0.3)MnO_3/BaTiO_3/ITO interface to dramatically enhance the optical response of the 5 nm BaTiO3 (BTO) barrier. Illumination with UV light exceeding the BTO bandgap through the top transparent ITO electrode generates a photovoltaic response in the R_High state, with an open circuit voltage V_oc of 400 mV at 20 K, enabling the optical sensing of the resistive state. In the R_Low state, the Schottky barrier is removed and the photoresponse disappears.
publishDate 2021
dc.date.none.fl_str_mv 2021
2021-05-13
2021
2021-05-13
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/8157
url https://hdl.handle.net/20.500.14352/8157
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
Atribución-NoComercial 3.0 España
https://creativecommons.org/licenses/by-nc/3.0/es/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
Atribución-NoComercial 3.0 España
https://creativecommons.org/licenses/by-nc/3.0/es/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Wiley
publisher.none.fl_str_mv Wiley
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869422999730388992
score 15,301603

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