Giant Thermal Transport Tuning at a Metal/Ferroelectric Interface

Interfacial thermal transport plays a prominent role in the thermal management of nanoscale objects and is of fundamental importance for basic research and nanodevices. At metal/insulator interfaces, a configuration commonly found in electronic devices, heat transport strongly depends upon the effec...

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Autores: Zang, Yipeng, Di, Chen, Geng, Zhiming, Yan, Xuejun, Ji, Dianxiang, Zheng, Ningchong, Jiang, Xingyu, Fu, Hanyu, Wang, Jianjun, Guo, Wei, Sun, Haoying, Han, Lu, Zhou, Yunlei, Gu, Zhengbin, Kong, Desheng, Aramberri, Hugo, Cazorla, Claudio, Íñiguez, Jorge, Rurali, Riccardo, Chen, Longqing, Zhou, Jian, Wu, Di, Lu, Minghui, Nie, Yuefeng, Chen, Yanfeng, Pan, Xiaoqing
Tipo de recurso: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:2022
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/264644
Acceso en línea:http://hdl.handle.net/10261/264644
https://api.elsevier.com/content/abstract/scopus_id/85120424320
Access Level:acceso abierto
Palabra clave:Electron-phonon coupling
Freestanding films
Metal/ferroelectric interfaces
Thermal resistance tuning
Uniaxial strain
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repository_id_str
dc.title.none.fl_str_mv Giant Thermal Transport Tuning at a Metal/Ferroelectric Interface
title Giant Thermal Transport Tuning at a Metal/Ferroelectric Interface
spellingShingle Giant Thermal Transport Tuning at a Metal/Ferroelectric Interface
Zang, Yipeng
Electron-phonon coupling
Freestanding films
Metal/ferroelectric interfaces
Thermal resistance tuning
Uniaxial strain
title_short Giant Thermal Transport Tuning at a Metal/Ferroelectric Interface
title_full Giant Thermal Transport Tuning at a Metal/Ferroelectric Interface
title_fullStr Giant Thermal Transport Tuning at a Metal/Ferroelectric Interface
title_full_unstemmed Giant Thermal Transport Tuning at a Metal/Ferroelectric Interface
title_sort Giant Thermal Transport Tuning at a Metal/Ferroelectric Interface
dc.creator.none.fl_str_mv Zang, Yipeng
Di, Chen
Geng, Zhiming
Yan, Xuejun
Ji, Dianxiang
Zheng, Ningchong
Jiang, Xingyu
Fu, Hanyu
Wang, Jianjun
Guo, Wei
Sun, Haoying
Han, Lu
Zhou, Yunlei
Gu, Zhengbin
Kong, Desheng
Aramberri, Hugo
Cazorla, Claudio
Íñiguez, Jorge
Rurali, Riccardo
Chen, Longqing
Zhou, Jian
Wu, Di
Lu, Minghui
Nie, Yuefeng
Chen, Yanfeng
Pan, Xiaoqing
author Zang, Yipeng
author_facet Zang, Yipeng
Di, Chen
Geng, Zhiming
Yan, Xuejun
Ji, Dianxiang
Zheng, Ningchong
Jiang, Xingyu
Fu, Hanyu
Wang, Jianjun
Guo, Wei
Sun, Haoying
Han, Lu
Zhou, Yunlei
Gu, Zhengbin
Kong, Desheng
Aramberri, Hugo
Cazorla, Claudio
Íñiguez, Jorge
Rurali, Riccardo
Chen, Longqing
Zhou, Jian
Wu, Di
Lu, Minghui
Nie, Yuefeng
Chen, Yanfeng
Pan, Xiaoqing
author_role author
author2 Di, Chen
Geng, Zhiming
Yan, Xuejun
Ji, Dianxiang
Zheng, Ningchong
Jiang, Xingyu
Fu, Hanyu
Wang, Jianjun
Guo, Wei
Sun, Haoying
Han, Lu
Zhou, Yunlei
Gu, Zhengbin
Kong, Desheng
Aramberri, Hugo
Cazorla, Claudio
Íñiguez, Jorge
Rurali, Riccardo
Chen, Longqing
Zhou, Jian
Wu, Di
Lu, Minghui
Nie, Yuefeng
Chen, Yanfeng
Pan, Xiaoqing
author2_role author
author
author
author
author
author
author
author
author
author
author
author
author
author
author
author
author
author
author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv National Natural Science Foundation of China
National Basic Research Program (China)
Fundamental Research Funds for the Central Universities (China)
Jiangsu Province
Fonds National de la Recherche Luxembourg
Ministerio de Ciencia, Innovación y Universidades (España)
Generalitat de Catalunya
Aramberri, Hugo [0000-0003-2216-8931]
Cazorla, Claudio [0000-0002-6501-4513]
Íñiguez, Jorge [0000-0001-6435-3604]
Rurali, Riccardo [0000-0002-4086-4191]
Nie, Yuefeng [0000-0002-3449-5393]
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
dc.subject.none.fl_str_mv Electron-phonon coupling
Freestanding films
Metal/ferroelectric interfaces
Thermal resistance tuning
Uniaxial strain
topic Electron-phonon coupling
Freestanding films
Metal/ferroelectric interfaces
Thermal resistance tuning
Uniaxial strain
description Interfacial thermal transport plays a prominent role in the thermal management of nanoscale objects and is of fundamental importance for basic research and nanodevices. At metal/insulator interfaces, a configuration commonly found in electronic devices, heat transport strongly depends upon the effective energy transfer from thermalized electrons in the metal to the phonons in the insulator. However, the mechanism of interfacial electron-phonon coupling and thermal transport at metal/insulator interfaces is not well understood. Here, the observation of a substantial enhancement of the interfacial thermal resistance and the important role of surface charges at the metal/ferroelectric interface in an Al/BiFeO3 membrane are reported. By applying uniaxial strain, the interfacial thermal resistance can be varied substantially (up to an order of magnitude), which is attributed to the renormalized interfacial electron-phonon coupling caused by the charge redistribution at the interface due to the polarization rotation. These results imply that surface charges at a metal/insulator interface can substantially enhance the interfacial electron-phonon-mediated thermal coupling, providing a new route to optimize the thermal transport performance in next-generation nanodevices, power electronics, and thermal logic devices.
publishDate 2022
dc.date.none.fl_str_mv 2022
2022
2022
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
Postprint
info:eu-repo/semantics/acceptedVersion
format article
status_str acceptedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/264644
https://api.elsevier.com/content/abstract/scopus_id/85120424320
url http://hdl.handle.net/10261/264644
https://api.elsevier.com/content/abstract/scopus_id/85120424320
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv #PLACEHOLDER_PARENT_METADATA_VALUE#
#PLACEHOLDER_PARENT_METADATA_VALUE#
info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/MAT2017-90024-P
info:eu-repo/grantAgreement/MICIU/Plan Estatal de investigación Científica y Técnica y de Innovación 2017-2020/CEX2019-000917-S
Advanced materials (Deerfield Beach, Fla.)
http://dx.doi.org/10.1002/adma.202105778
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv Wiley-VCH
publisher.none.fl_str_mv Wiley-VCH
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
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spelling Giant Thermal Transport Tuning at a Metal/Ferroelectric InterfaceZang, YipengDi, ChenGeng, ZhimingYan, XuejunJi, DianxiangZheng, NingchongJiang, XingyuFu, HanyuWang, JianjunGuo, WeiSun, HaoyingHan, LuZhou, YunleiGu, ZhengbinKong, DeshengAramberri, HugoCazorla, ClaudioÍñiguez, JorgeRurali, RiccardoChen, LongqingZhou, JianWu, DiLu, MinghuiNie, YuefengChen, YanfengPan, XiaoqingElectron-phonon couplingFreestanding filmsMetal/ferroelectric interfacesThermal resistance tuningUniaxial strainInterfacial thermal transport plays a prominent role in the thermal management of nanoscale objects and is of fundamental importance for basic research and nanodevices. At metal/insulator interfaces, a configuration commonly found in electronic devices, heat transport strongly depends upon the effective energy transfer from thermalized electrons in the metal to the phonons in the insulator. However, the mechanism of interfacial electron-phonon coupling and thermal transport at metal/insulator interfaces is not well understood. Here, the observation of a substantial enhancement of the interfacial thermal resistance and the important role of surface charges at the metal/ferroelectric interface in an Al/BiFeO3 membrane are reported. By applying uniaxial strain, the interfacial thermal resistance can be varied substantially (up to an order of magnitude), which is attributed to the renormalized interfacial electron-phonon coupling caused by the charge redistribution at the interface due to the polarization rotation. These results imply that surface charges at a metal/insulator interface can substantially enhance the interfacial electron-phonon-mediated thermal coupling, providing a new route to optimize the thermal transport performance in next-generation nanodevices, power electronics, and thermal logic devices.Y.Z., C.D., and Z.G. contributed equally to this work. This work was supported by the National Natural Science Foundation of China (nos. 11774153, 51772143, 11474158, 11890700, 11904162, 1861161004, 11625418, 11974163, 51732006, 52027803, 61704074, and 91963211), the National Basic Research (Key R&D) Program of China (2017YFA0303702 and 2018YFA0306200), the introduced innovative R&D team of Guangdong (2017ZT07C062), the Foundation for Innovative Research Groups of the National Natural Science Foundation of China (51720001), and the Fundamental Research Funds for the Central Universities (nos. 0213-14380198 and 0213-14380167). Y.N. was supported by High-Level Entrepreneurial and Innovative Talents Introduction, Jiangsu Province. Theoretical work was funded by the Luxembourg National Research Fund through project FNR/C18/MS/12705883/REFOX. (H.A. and J.Í.). C.C. acknowledges support from the Spanish Ministry of Science, Innovation, and Universities under the “Ramón y Cajal” fellowship RYC2018-024947-I. R.R. acknowledges financial support by the Ministerio de Ciencia e Innovación (MICINN) under grant FEDER-MAT2017-90024-P and the Severo Ochoa Centres of Excellence Program under Grant CEX2019-000917-S and by the Generalitat de Catalunya under grants no. 2017 SGR 1506. The authors thank the Centro de Supercomputación de Galicia (CESGA) for the use of their computational resources. The authors thank Yaya Zhou for the support of SEM and EDS measurement.With funding from the Spanish government through the ‘Severo Ochoa Centre of Excellence’ accreditation (CEX2019-000917-S).Peer reviewedWiley-VCHNational Natural Science Foundation of ChinaNational Basic Research Program (China)Fundamental Research Funds for the Central Universities (China)Jiangsu ProvinceFonds National de la Recherche LuxembourgMinisterio de Ciencia, Innovación y Universidades (España)Generalitat de CatalunyaAramberri, Hugo [0000-0003-2216-8931]Cazorla, Claudio [0000-0002-6501-4513]Íñiguez, Jorge [0000-0001-6435-3604]Rurali, Riccardo [0000-0002-4086-4191]Nie, Yuefeng [0000-0002-3449-5393]Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]202220222022info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Postprintinfo:eu-repo/semantics/acceptedVersionhttp://hdl.handle.net/10261/264644https://api.elsevier.com/content/abstract/scopus_id/85120424320reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Inglés#PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE#info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/MAT2017-90024-Pinfo:eu-repo/grantAgreement/MICIU/Plan Estatal de investigación Científica y Técnica y de Innovación 2017-2020/CEX2019-000917-SAdvanced materials (Deerfield Beach, Fla.)http://dx.doi.org/10.1002/adma.202105778Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/2646442026-05-22T06:33:51Z
score 15,811543

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