Unveiling Planar Defects in Hexagonal Group IV Materials

Recently synthesized hexagonal group IV materials are a promising platform to realize efficient light emission that is closely integrated with electronics. A high crystal quality is essential to assess the intrinsic electronic and optical properties of these materials unaffected by structural defect...

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Autores: Fadaly, Elham M. T., Marzegalli, Anna, Ren, Yizhen, Sun, Lin, Dijkstra, Alain, Matteis, Diego de, Scalise, Emilio, Sarikov, Andrey, Luca, Marta De, Rurali, Riccardo, Zardo, Ilaria, Haverkort, Jos E. M., Botti, Silvana, Miglio, Leo, Bakkers, Erik P. A. M.
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2021
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/243710
Acceso en línea:http://hdl.handle.net/10261/243710
Access Level:acceso abierto
Palabra clave:Nanowires
Hexagonal group IV
Hexagonal Ge
Hexagonal Si I3 basal stacking fault
Defects
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spelling Unveiling Planar Defects in Hexagonal Group IV MaterialsFadaly, Elham M. T.Marzegalli, AnnaRen, YizhenSun, LinDijkstra, AlainMatteis, Diego deScalise, EmilioSarikov, AndreyLuca, Marta DeRurali, RiccardoZardo, IlariaHaverkort, Jos E. M.Botti, SilvanaMiglio, LeoBakkers, Erik P. A. M.NanowiresHexagonal group IVHexagonal GeHexagonal Si I3 basal stacking faultDefectsRecently synthesized hexagonal group IV materials are a promising platform to realize efficient light emission that is closely integrated with electronics. A high crystal quality is essential to assess the intrinsic electronic and optical properties of these materials unaffected by structural defects. Here, we identify a previously unknown partial planar defect in materials with a type I3 basal stacking fault and investigate its structural and electronic properties. Electron microscopy and atomistic modeling are used to reconstruct and visualize this stacking fault and its terminating dislocations in the crystal. From band structure calculations coupled to photoluminescence measurements, we conclude that the I3 defect does not create states within the hex-Ge and hex-Si band gap. Therefore, the defect is not detrimental to the optoelectronic properties of the hex-SiGe materials family. Finally, highlighting the properties of this defect can be of great interest to the community of hex-III-Ns, where this defect is also present.This project has received funding from the European Union’s Horizon 2020 research and innovation program under Grant agreement no. 735008 (SiLAS). I.Z. acknowledges financial support from the European Research Council (ERC) under the European Union’s Horizon 2020 research and innovation program (Grant agreement no. 756365). M.D.L. acknowledges support from the Swiss National Science Foundation Ambizione grant (Grant no. PZ00P2_179801). R.R. acknowledges financial support by the Ministerio de Economía, Industria y Competitividad (MINECO) under Grant FEDER-MAT2017–90024-P, by the Severo Ochoa Centres of Excellence Program under Grant SEV-2015–049,6 and by the Generalitat de Catalunya under Grant no. 2017 SGR 1506. L.S. acknowledges financial support from the China Scholarship Council. S.B. acknowledges funding from the Volkswagen Stiftung (Momentum) through the project “Dandelion” and the DFG through projects SFB-1375 and BO4280/8-1. Computational resources were also provided by the Leibniz Supercomputing Center through projects pr48je and pr62ja.Peer reviewedAmerican Chemical SocietyEuropean CommissionEuropean Research CouncilSwiss National Science FoundationMinisterio de Economía, Industria y Competitividad (España)Generalitat de CatalunyaChina Scholarship CouncilVolkswagen FoundationGerman Research FoundationLeibniz Supercomputing CentreConsejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]202120212021info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Publisher's versioninfo:eu-repo/semantics/publishedVersionhttp://hdl.handle.net/10261/243710reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Inglés#PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE#info:eu-repo/grantAgreement/EC/H2020/735008info:eu-repo/grantAgreement/EC/H2020/756365info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/MAT2017–90024-P,info:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/SEV-2015-0496http://dx.doi.org/10.1021/acs.nanolett.1c00683Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/2437102026-05-22T06:33:51Z
dc.title.none.fl_str_mv Unveiling Planar Defects in Hexagonal Group IV Materials
title Unveiling Planar Defects in Hexagonal Group IV Materials
spellingShingle Unveiling Planar Defects in Hexagonal Group IV Materials
Fadaly, Elham M. T.
Nanowires
Hexagonal group IV
Hexagonal Ge
Hexagonal Si I3 basal stacking fault
Defects
title_short Unveiling Planar Defects in Hexagonal Group IV Materials
title_full Unveiling Planar Defects in Hexagonal Group IV Materials
title_fullStr Unveiling Planar Defects in Hexagonal Group IV Materials
title_full_unstemmed Unveiling Planar Defects in Hexagonal Group IV Materials
title_sort Unveiling Planar Defects in Hexagonal Group IV Materials
dc.creator.none.fl_str_mv Fadaly, Elham M. T.
Marzegalli, Anna
Ren, Yizhen
Sun, Lin
Dijkstra, Alain
Matteis, Diego de
Scalise, Emilio
Sarikov, Andrey
Luca, Marta De
Rurali, Riccardo
Zardo, Ilaria
Haverkort, Jos E. M.
Botti, Silvana
Miglio, Leo
Bakkers, Erik P. A. M.
author Fadaly, Elham M. T.
author_facet Fadaly, Elham M. T.
Marzegalli, Anna
Ren, Yizhen
Sun, Lin
Dijkstra, Alain
Matteis, Diego de
Scalise, Emilio
Sarikov, Andrey
Luca, Marta De
Rurali, Riccardo
Zardo, Ilaria
Haverkort, Jos E. M.
Botti, Silvana
Miglio, Leo
Bakkers, Erik P. A. M.
author_role author
author2 Marzegalli, Anna
Ren, Yizhen
Sun, Lin
Dijkstra, Alain
Matteis, Diego de
Scalise, Emilio
Sarikov, Andrey
Luca, Marta De
Rurali, Riccardo
Zardo, Ilaria
Haverkort, Jos E. M.
Botti, Silvana
Miglio, Leo
Bakkers, Erik P. A. M.
author2_role author
author
author
author
author
author
author
author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv European Commission
European Research Council
Swiss National Science Foundation
Ministerio de Economía, Industria y Competitividad (España)
Generalitat de Catalunya
China Scholarship Council
Volkswagen Foundation
German Research Foundation
Leibniz Supercomputing Centre
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
dc.subject.none.fl_str_mv Nanowires
Hexagonal group IV
Hexagonal Ge
Hexagonal Si I3 basal stacking fault
Defects
topic Nanowires
Hexagonal group IV
Hexagonal Ge
Hexagonal Si I3 basal stacking fault
Defects
description Recently synthesized hexagonal group IV materials are a promising platform to realize efficient light emission that is closely integrated with electronics. A high crystal quality is essential to assess the intrinsic electronic and optical properties of these materials unaffected by structural defects. Here, we identify a previously unknown partial planar defect in materials with a type I3 basal stacking fault and investigate its structural and electronic properties. Electron microscopy and atomistic modeling are used to reconstruct and visualize this stacking fault and its terminating dislocations in the crystal. From band structure calculations coupled to photoluminescence measurements, we conclude that the I3 defect does not create states within the hex-Ge and hex-Si band gap. Therefore, the defect is not detrimental to the optoelectronic properties of the hex-SiGe materials family. Finally, highlighting the properties of this defect can be of great interest to the community of hex-III-Ns, where this defect is also present.
publishDate 2021
dc.date.none.fl_str_mv 2021
2021
2021
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
Publisher's version
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/243710
url http://hdl.handle.net/10261/243710
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv #PLACEHOLDER_PARENT_METADATA_VALUE#
#PLACEHOLDER_PARENT_METADATA_VALUE#
#PLACEHOLDER_PARENT_METADATA_VALUE#
#PLACEHOLDER_PARENT_METADATA_VALUE#
info:eu-repo/grantAgreement/EC/H2020/735008
info:eu-repo/grantAgreement/EC/H2020/756365
info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/MAT2017–90024-P,
info:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/SEV-2015-0496
http://dx.doi.org/10.1021/acs.nanolett.1c00683
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv American Chemical Society
publisher.none.fl_str_mv American Chemical Society
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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