Synthesis and Physical Properties of Purely Organic BEDT-TTF-Based Conductors Containing Hetero-/Homosubstituted Cl/CN-Anilate Derivatives

Radical cation salts composed of a bis(ethylenedithio)- tetrathiafulvalene (ET) donor with homo-/heterosubstituted Cl/CN anilic acids as purely organic molecular conducting materials formulated as [BEDTTTF]2[HClCNAn] (1) and [BEDT-TTF][HCl2An] (2) have been prepared by electrocrystallization. Compou...

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Detalles Bibliográficos
Autores: Sahadevan, Suchithra Ashoka, Monni, Noemi, Abhervé, Alexandre, Auban-Senzier, Pascale, Canadell, Enric, Mercuri, Maria Laura, Avarvari, Narcis
Tipo de recurso: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:2017
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/156971
Acceso en línea:http://hdl.handle.net/10261/156971
Access Level:acceso abierto
Palabra clave:Electrocrystallization
Mott Insulator
BEDT-TTF
Anilate
Descripción
Sumario:Radical cation salts composed of a bis(ethylenedithio)- tetrathiafulvalene (ET) donor with homo-/heterosubstituted Cl/CN anilic acids as purely organic molecular conducting materials formulated as [BEDTTTF]2[HClCNAn] (1) and [BEDT-TTF][HCl2An] (2) have been prepared by electrocrystallization. Compounds 1 and 2 crystallized in the monoclinic space group P2/c for 1 and I2/a for 2, showing segregated donor-anion layers arranged in a α′-type donor packing pattern (1) and twisted parallel columns (2), respectively. Single-crystal conductivity measurements show that 1 is a semiconductor with room-temperature conductivity of 10−2 S cm−1 and an activation energy Ea of 1900 K.