Dimensionality-driven metal-insulator transition in spin-orbit-coupled IrO_2
A metal-insulator transition is observed in spin-orbit-coupled IrO_2 thin films upon reduction of the film thickness. In the epitaxially grown samples, the critical thickness (t similar to 1.5-2.2 nm) is found to depend on growth orientation (001), (100) or (110). Interestingly from the applied poin...
| Autores: | , , , , , , , , , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2021 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/4504 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/4504 |
| Access Level: | acceso abierto |
| Palabra clave: | 538.9 Ray circular-dichroism Conductivity Strain Física de materiales Física del estado sólido 2211 Física del Estado Sólido |
| Sumario: | A metal-insulator transition is observed in spin-orbit-coupled IrO_2 thin films upon reduction of the film thickness. In the epitaxially grown samples, the critical thickness (t similar to 1.5-2.2 nm) is found to depend on growth orientation (001), (100) or (110). Interestingly from the applied point of view, the insulating behavior is found even in polycrystalline ultrathin films. By analyzing the experimental electrical response with various theoretical models, we find good fits to the Efros-Shklovskii-VRH and the Arrhenius-type behaviors, which suggests an important role of electron correlations in determining the electrical properties of IrO_2. Our magnetic measurements also point to a significant role of magnetic order. Altogether, our results would point to a mixed Slater- and Mott-type of insulator. |
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