Morphology Influence on the Mechanical Stress Response in Bendable Organic Field-Effect Transistors with Solution-Processed Semiconductors

The influence of semiconductor morphology on the mechanical response of low voltage, flexible organic field-effect transistors fabricated on plastic substrates is explored. Bar-assisted meniscus shearing is considered for patterning the organic semiconductor; morphological features of the film are c...

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Autores: Lai, Stefano, Temiño, Inés, Cramer, Tobias, Pozo, Freddy G. del, Fraboni, Beatrice, Cosseddu, Piero, Bonfiglio, Annalisa, Mas Torrent, Marta
Tipo de recurso: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:2017
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/155498
Acceso en línea:http://hdl.handle.net/10261/155498
Access Level:acceso abierto
Palabra clave:Bar-assisted meniscus shearing
Organic field-effect transistors
Scanning Kelvin probe microscopy
Solution-processed organic semiconductors
Strain sensors
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spelling Morphology Influence on the Mechanical Stress Response in Bendable Organic Field-Effect Transistors with Solution-Processed SemiconductorsLai, StefanoTemiño, InésCramer, TobiasPozo, Freddy G. delFraboni, BeatriceCosseddu, PieroBonfiglio, AnnalisaMas Torrent, MartaBar-assisted meniscus shearingOrganic field-effect transistorsScanning Kelvin probe microscopySolution-processed organic semiconductorsStrain sensorsThe influence of semiconductor morphology on the mechanical response of low voltage, flexible organic field-effect transistors fabricated on plastic substrates is explored. Bar-assisted meniscus shearing is considered for patterning the organic semiconductor; morphological features of the film are changed by varying the shearing direction. Several devices with two different organic semiconductor coatings are reported. The response of such devices to two kinds of deformation, namely elongation and compression, are investigated. The effect of mechanical stress is also considered. A detailed morphological analysis, including atomic force microscopy and scanning Kelvin probe microscopy, is performed in order to shine a light on the relationship between morphological features and electrical response of the devices. The results demonstrate that not only the response to bending is reliant on the morphological properties of the films but also that it can be tuned according to the bar-shearing direction. The employment of the proposed approach for the development of devices with different extent of response to mechanical deformation, from bending sensors to strain-insensitive devices for applications needing electrical stability upon deformation, can be thus foreseen.This work was funded by the ERC StG 2012-306826 e-GAMES, Networking Research Center on Bioengineering, Biomaterials, and Nanomedicine (CIBER-BBN), the DGI (Spain) project FANCY CTQ2016-80030-R, the Generalitat de Catalunya (2014-SGR-17) and the Spanish Ministry of Economy and Competitiveness, through the “Severo Ochoa” Programme for Centers of Excellence in R&D (SEV-2015-0496). I. T. acknowledges FPU fellowship from the Ministry and is enrolled in the Materials Science PhD Program of Universitat Autònoma de Barcelona. F. G. Del Pozo thanks Universidad Técnica de Ambato and Secretaría de Educación Superior, Ciencia, Tecnología e Innovación for funding through a doctoral scholarship “Convocatoria abierta 2010.”Peer reviewedWiley-VCHEuropean Research CouncilCentro de Investigación Biomédica en Red Bioingeniería, Biomateriales y Nanomedicina (España)Dirección General de Investigación Científica y Técnica, DGICT (España)Generalitat de CatalunyaMinisterio de Economía y Competitividad (España)Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]201720172017info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Postprintinfo:eu-repo/semantics/acceptedVersionhttp://hdl.handle.net/10261/155498reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Inglés#PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE#info:eu-repo/grantAgreement/EC/FP7/306826info:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/CTQ2016-80030-Rinfo:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/SEV-2015-0496http://dx.doi.org/10.1002/aelm.201700271Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/1554982026-05-22T06:33:51Z
dc.title.none.fl_str_mv Morphology Influence on the Mechanical Stress Response in Bendable Organic Field-Effect Transistors with Solution-Processed Semiconductors
title Morphology Influence on the Mechanical Stress Response in Bendable Organic Field-Effect Transistors with Solution-Processed Semiconductors
spellingShingle Morphology Influence on the Mechanical Stress Response in Bendable Organic Field-Effect Transistors with Solution-Processed Semiconductors
Lai, Stefano
Bar-assisted meniscus shearing
Organic field-effect transistors
Scanning Kelvin probe microscopy
Solution-processed organic semiconductors
Strain sensors
title_short Morphology Influence on the Mechanical Stress Response in Bendable Organic Field-Effect Transistors with Solution-Processed Semiconductors
title_full Morphology Influence on the Mechanical Stress Response in Bendable Organic Field-Effect Transistors with Solution-Processed Semiconductors
title_fullStr Morphology Influence on the Mechanical Stress Response in Bendable Organic Field-Effect Transistors with Solution-Processed Semiconductors
title_full_unstemmed Morphology Influence on the Mechanical Stress Response in Bendable Organic Field-Effect Transistors with Solution-Processed Semiconductors
title_sort Morphology Influence on the Mechanical Stress Response in Bendable Organic Field-Effect Transistors with Solution-Processed Semiconductors
dc.creator.none.fl_str_mv Lai, Stefano
Temiño, Inés
Cramer, Tobias
Pozo, Freddy G. del
Fraboni, Beatrice
Cosseddu, Piero
Bonfiglio, Annalisa
Mas Torrent, Marta
author Lai, Stefano
author_facet Lai, Stefano
Temiño, Inés
Cramer, Tobias
Pozo, Freddy G. del
Fraboni, Beatrice
Cosseddu, Piero
Bonfiglio, Annalisa
Mas Torrent, Marta
author_role author
author2 Temiño, Inés
Cramer, Tobias
Pozo, Freddy G. del
Fraboni, Beatrice
Cosseddu, Piero
Bonfiglio, Annalisa
Mas Torrent, Marta
author2_role author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv European Research Council
Centro de Investigación Biomédica en Red Bioingeniería, Biomateriales y Nanomedicina (España)
Dirección General de Investigación Científica y Técnica, DGICT (España)
Generalitat de Catalunya
Ministerio de Economía y Competitividad (España)
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
dc.subject.none.fl_str_mv Bar-assisted meniscus shearing
Organic field-effect transistors
Scanning Kelvin probe microscopy
Solution-processed organic semiconductors
Strain sensors
topic Bar-assisted meniscus shearing
Organic field-effect transistors
Scanning Kelvin probe microscopy
Solution-processed organic semiconductors
Strain sensors
description The influence of semiconductor morphology on the mechanical response of low voltage, flexible organic field-effect transistors fabricated on plastic substrates is explored. Bar-assisted meniscus shearing is considered for patterning the organic semiconductor; morphological features of the film are changed by varying the shearing direction. Several devices with two different organic semiconductor coatings are reported. The response of such devices to two kinds of deformation, namely elongation and compression, are investigated. The effect of mechanical stress is also considered. A detailed morphological analysis, including atomic force microscopy and scanning Kelvin probe microscopy, is performed in order to shine a light on the relationship between morphological features and electrical response of the devices. The results demonstrate that not only the response to bending is reliant on the morphological properties of the films but also that it can be tuned according to the bar-shearing direction. The employment of the proposed approach for the development of devices with different extent of response to mechanical deformation, from bending sensors to strain-insensitive devices for applications needing electrical stability upon deformation, can be thus foreseen.
publishDate 2017
dc.date.none.fl_str_mv 2017
2017
2017
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
Postprint
info:eu-repo/semantics/acceptedVersion
format article
status_str acceptedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/155498
url http://hdl.handle.net/10261/155498
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv #PLACEHOLDER_PARENT_METADATA_VALUE#
#PLACEHOLDER_PARENT_METADATA_VALUE#
#PLACEHOLDER_PARENT_METADATA_VALUE#
info:eu-repo/grantAgreement/EC/FP7/306826
info:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/CTQ2016-80030-R
info:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/SEV-2015-0496
http://dx.doi.org/10.1002/aelm.201700271
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv Wiley-VCH
publisher.none.fl_str_mv Wiley-VCH
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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