Ultrafast Epitaxial Growth Kinetics in Functional Oxide Thin Films Grown by Pulsed Laser Annealing of Chemical Solutions

The crystallization process and physical properties of different functional oxide thin films (CeZrO, LaNiO, BaSrTiO, and LaSrMnO) on single crystal substrates (YO:ZrO, LaAlO, and SrTiO) are studied by pulsed laser annealing (PLA). A Nd:YAG laser source (λ = 266 nm, 10 Hz and τ ∼3 ns) is employed to...

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Autores: Queraltó López, Albert, Pérez del Pino, Ángel|||0000-0002-1405-6027, De La Mata, Maria|||0000-0002-1581-4838, Arbiol i Cobos, Jordi|||0000-0002-0695-1726, Tristany, Mar, Obradors, Xavier|||0000-0003-4592-7718, Puig i Molina, Mª Teresa|||0000-0002-1873-0488
Tipo de recurso: artículo
Fecha de publicación:2016
País:España
Institución:Universitat Autònoma de Barcelona
Repositorio:Dipòsit Digital de Documents de la UAB
Idioma:inglés
OAI Identifier:oai:ddd.uab.cat:195336
Acceso en línea:https://ddd.uab.cat/record/195336
https://dx.doi.org/urn:doi:10.1021/acs.chemmater.6b01968
Access Level:acceso abierto
Palabra clave:Atmospheric conditions
Crystallization process
Epitaxial crystallization
Fast epitaxial growths
Photo-thermal interaction
Photochemical effect
Pulsed laser annealing
Single crystal substrates
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spelling Ultrafast Epitaxial Growth Kinetics in Functional Oxide Thin Films Grown by Pulsed Laser Annealing of Chemical SolutionsQueraltó López, AlbertPérez del Pino, Ángel|||0000-0002-1405-6027De La Mata, Maria|||0000-0002-1581-4838Arbiol i Cobos, Jordi|||0000-0002-0695-1726Tristany, MarObradors, Xavier|||0000-0003-4592-7718Puig i Molina, Mª Teresa|||0000-0002-1873-0488Atmospheric conditionsCrystallization processEpitaxial crystallizationFast epitaxial growthsPhoto-thermal interactionPhotochemical effectPulsed laser annealingSingle crystal substratesThe crystallization process and physical properties of different functional oxide thin films (CeZrO, LaNiO, BaSrTiO, and LaSrMnO) on single crystal substrates (YO:ZrO, LaAlO, and SrTiO) are studied by pulsed laser annealing (PLA). A Nd:YAG laser source (λ = 266 nm, 10 Hz and τ ∼3 ns) is employed to crystallize chemical solution deposited (CSD) amorphous/nanocrystalline films under atmospheric conditions. We provide new insight on the influence of photochemical and photothermal interactions on the epitaxial crystallization kinetics of oxide thin films during the transformation from amorphous/polycrystalline material (i.e., atomic diffusion, epitaxial growth rates, and activation energies of nucleation and crystallization). The epitaxial growth is investigated by varying the laser fluence and the applied number of pulses. The morphology, structure, and epitaxial evolution of films are evaluated by means of atomic force and transmission electron microscopies and X-ray diffraction. Highly epitaxial oriented films of 20-40 nm in thickness are obtained by PLA. The crystallization kinetics of laser treatments is determined to be orders of magnitude faster than thermal treatments with similar activation energies (1.5-4.1 eV), mainly due to the large temperature gradients inducing modified atomic diffusion mechanisms derived mainly from photothermal interactions, as well as a minor contribution of photochemical effects. The fast heating rates achieved by PLA also contribute to the fast epitaxial growth due to reduced coarsening of polycrystalline material. The measurement of the physical properties (electrical resistivity and magnetism) of laser processed CSD films has revealed significantly good functionalities, close to those of thermally grown films, but with much shorter processing times. 22016-01-0120162016-01-01Articlehttp://purl.org/coar/resource_type/c_6501AMhttp://purl.org/coar/version/c_ab4af688f83e57aainfo:eu-repo/semantics/articleapplication/pdfhttps://ddd.uab.cat/record/195336https://dx.doi.org/urn:doi:10.1021/acs.chemmater.6b01968reponame:Dipòsit Digital de Documents de la UABinstname:Universitat Autònoma de BarcelonaInglésengMinisterio de Economía y Competitividad https://doi.org/10.13039/501100003329 MAT2014-51778-C2-1-RMinisterio de Educación y Ciencia https://doi.org/10.13039/501100003329 CSD2007-00041Ministerio de Ciencia e Innovación https://doi.org/10.13039/501100004837 MAT2011-28874-C02-01Ministerio de Economía y Competitividad https://doi.org/10.13039/501100003329 ENE2014-56109-C3-3-RAgència de Gestió d'Ajuts Universitaris i de Recerca https://doi.org/10.13039/501100003030 2009/SGR-770Agència de Gestió d'Ajuts Universitaris i de Recerca https://doi.org/10.13039/501100003030 2014/SGR-1638Agència de Gestió d'Ajuts Universitaris i de Recerca https://doi.org/10.13039/501100003030 2015/SGR-753open accesshttp://purl.org/coar/access_right/c_abf2Aquest material està protegit per drets d'autor i/o drets afins. Podeu utilitzar aquest material en funció del que permet la legislació de drets d'autor i drets afins d'aplicació al vostre cas. Per a d'altres usos heu d'obtenir permís del(s) titular(s) de drets.https://rightsstatements.org/vocab/InC/1.0/info:eu-repo/semantics/openAccessoai:ddd.uab.cat:1953362026-06-06T12:50:31Z
dc.title.none.fl_str_mv Ultrafast Epitaxial Growth Kinetics in Functional Oxide Thin Films Grown by Pulsed Laser Annealing of Chemical Solutions
title Ultrafast Epitaxial Growth Kinetics in Functional Oxide Thin Films Grown by Pulsed Laser Annealing of Chemical Solutions
spellingShingle Ultrafast Epitaxial Growth Kinetics in Functional Oxide Thin Films Grown by Pulsed Laser Annealing of Chemical Solutions
Queraltó López, Albert
Atmospheric conditions
Crystallization process
Epitaxial crystallization
Fast epitaxial growths
Photo-thermal interaction
Photochemical effect
Pulsed laser annealing
Single crystal substrates
title_short Ultrafast Epitaxial Growth Kinetics in Functional Oxide Thin Films Grown by Pulsed Laser Annealing of Chemical Solutions
title_full Ultrafast Epitaxial Growth Kinetics in Functional Oxide Thin Films Grown by Pulsed Laser Annealing of Chemical Solutions
title_fullStr Ultrafast Epitaxial Growth Kinetics in Functional Oxide Thin Films Grown by Pulsed Laser Annealing of Chemical Solutions
title_full_unstemmed Ultrafast Epitaxial Growth Kinetics in Functional Oxide Thin Films Grown by Pulsed Laser Annealing of Chemical Solutions
title_sort Ultrafast Epitaxial Growth Kinetics in Functional Oxide Thin Films Grown by Pulsed Laser Annealing of Chemical Solutions
dc.creator.none.fl_str_mv Queraltó López, Albert
Pérez del Pino, Ángel|||0000-0002-1405-6027
De La Mata, Maria|||0000-0002-1581-4838
Arbiol i Cobos, Jordi|||0000-0002-0695-1726
Tristany, Mar
Obradors, Xavier|||0000-0003-4592-7718
Puig i Molina, Mª Teresa|||0000-0002-1873-0488
author Queraltó López, Albert
author_facet Queraltó López, Albert
Pérez del Pino, Ángel|||0000-0002-1405-6027
De La Mata, Maria|||0000-0002-1581-4838
Arbiol i Cobos, Jordi|||0000-0002-0695-1726
Tristany, Mar
Obradors, Xavier|||0000-0003-4592-7718
Puig i Molina, Mª Teresa|||0000-0002-1873-0488
author_role author
author2 Pérez del Pino, Ángel|||0000-0002-1405-6027
De La Mata, Maria|||0000-0002-1581-4838
Arbiol i Cobos, Jordi|||0000-0002-0695-1726
Tristany, Mar
Obradors, Xavier|||0000-0003-4592-7718
Puig i Molina, Mª Teresa|||0000-0002-1873-0488
author2_role author
author
author
author
author
author
dc.subject.none.fl_str_mv Atmospheric conditions
Crystallization process
Epitaxial crystallization
Fast epitaxial growths
Photo-thermal interaction
Photochemical effect
Pulsed laser annealing
Single crystal substrates
topic Atmospheric conditions
Crystallization process
Epitaxial crystallization
Fast epitaxial growths
Photo-thermal interaction
Photochemical effect
Pulsed laser annealing
Single crystal substrates
description The crystallization process and physical properties of different functional oxide thin films (CeZrO, LaNiO, BaSrTiO, and LaSrMnO) on single crystal substrates (YO:ZrO, LaAlO, and SrTiO) are studied by pulsed laser annealing (PLA). A Nd:YAG laser source (λ = 266 nm, 10 Hz and τ ∼3 ns) is employed to crystallize chemical solution deposited (CSD) amorphous/nanocrystalline films under atmospheric conditions. We provide new insight on the influence of photochemical and photothermal interactions on the epitaxial crystallization kinetics of oxide thin films during the transformation from amorphous/polycrystalline material (i.e., atomic diffusion, epitaxial growth rates, and activation energies of nucleation and crystallization). The epitaxial growth is investigated by varying the laser fluence and the applied number of pulses. The morphology, structure, and epitaxial evolution of films are evaluated by means of atomic force and transmission electron microscopies and X-ray diffraction. Highly epitaxial oriented films of 20-40 nm in thickness are obtained by PLA. The crystallization kinetics of laser treatments is determined to be orders of magnitude faster than thermal treatments with similar activation energies (1.5-4.1 eV), mainly due to the large temperature gradients inducing modified atomic diffusion mechanisms derived mainly from photothermal interactions, as well as a minor contribution of photochemical effects. The fast heating rates achieved by PLA also contribute to the fast epitaxial growth due to reduced coarsening of polycrystalline material. The measurement of the physical properties (electrical resistivity and magnetism) of laser processed CSD films has revealed significantly good functionalities, close to those of thermally grown films, but with much shorter processing times.
publishDate 2016
dc.date.none.fl_str_mv 2
2016-01-01
2016
2016-01-01
dc.type.none.fl_str_mv Article
http://purl.org/coar/resource_type/c_6501
AM
http://purl.org/coar/version/c_ab4af688f83e57aa
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://ddd.uab.cat/record/195336
https://dx.doi.org/urn:doi:10.1021/acs.chemmater.6b01968
url https://ddd.uab.cat/record/195336
https://dx.doi.org/urn:doi:10.1021/acs.chemmater.6b01968
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.relation.none.fl_str_mv Ministerio de Economía y Competitividad https://doi.org/10.13039/501100003329 MAT2014-51778-C2-1-R
Ministerio de Educación y Ciencia https://doi.org/10.13039/501100003329 CSD2007-00041
Ministerio de Ciencia e Innovación https://doi.org/10.13039/501100004837 MAT2011-28874-C02-01
Ministerio de Economía y Competitividad https://doi.org/10.13039/501100003329 ENE2014-56109-C3-3-R
Agència de Gestió d'Ajuts Universitaris i de Recerca https://doi.org/10.13039/501100003030 2009/SGR-770
Agència de Gestió d'Ajuts Universitaris i de Recerca https://doi.org/10.13039/501100003030 2014/SGR-1638
Agència de Gestió d'Ajuts Universitaris i de Recerca https://doi.org/10.13039/501100003030 2015/SGR-753
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
https://rightsstatements.org/vocab/InC/1.0/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
https://rightsstatements.org/vocab/InC/1.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Dipòsit Digital de Documents de la UAB
instname:Universitat Autònoma de Barcelona
instname_str Universitat Autònoma de Barcelona
reponame_str Dipòsit Digital de Documents de la UAB
collection Dipòsit Digital de Documents de la UAB
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