State-of-the-art silicon carbide diode dosimeters for ultra-high dose-per-pulse radiation at FLASH radiotherapy

Objective.The successful implementation of FLASH radiotherapy in clinical settings, with typical dose rates >40 Gy s-1, requires accurate real-time dosimetry.Approach.Silicon carbide (SiC) p-n diode dosimeters designed for the stringent requirements of FLASH radiotherapy have been fabricated and...

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Autores: Fleta, Celeste, Pellegrini, Giulio, Godignon, Philippe, Rodríguez, Faustino Gómez, Paz-Martín, José, Kranzer, Rafael, Schüller, Andreas
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2024
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/396130
Acceso en línea:http://hdl.handle.net/10261/396130
https://api.elsevier.com/content/abstract/scopus_id/85190898261
Access Level:acceso abierto
Palabra clave:FLASH radiotherapy
dosimetry
silicon carbide
http://metadata.un.org/sdg/9
Build resilient infrastructure, promote inclusive and sustainable industrialization and foster innovation
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spelling State-of-the-art silicon carbide diode dosimeters for ultra-high dose-per-pulse radiation at FLASH radiotherapyFleta, CelestePellegrini, GiulioGodignon, PhilippeRodríguez, Faustino GómezPaz-Martín, JoséKranzer, RafaelSchüller, AndreasFLASH radiotherapydosimetrysilicon carbidehttp://metadata.un.org/sdg/9Build resilient infrastructure, promote inclusive and sustainable industrialization and foster innovationObjective.The successful implementation of FLASH radiotherapy in clinical settings, with typical dose rates >40 Gy s-1, requires accurate real-time dosimetry.Approach.Silicon carbide (SiC) p-n diode dosimeters designed for the stringent requirements of FLASH radiotherapy have been fabricated and characterized in an ultra-high pulse dose rate electron beam. The circular SiC PiN diodes were fabricated at IMB-CNM (CSIC) in 3μm epitaxial 4H-SiC. Their characterization was performed in PTB's ultra-high pulse dose rate reference electron beam. The SiC diode was operated without external bias voltage. The linearity of the diode response was investigated up to doses per pulse (DPP) of 11 Gy and pulse durations ranging from 3 to 0.5μs. Percentage depth dose measurements were performed in ultra-high dose per pulse conditions. The effect of the total accumulated dose of 20 MeV electrons in the SiC diode sensitivity was evaluated. The temperature dependence of the response of the SiC diode was measured in the range 19 °C-38 °C. The temporal response of the diode was compared to the time-resolved beam current during each electron beam pulse. A diamond prototype detector (flashDiamond) and Alanine measurements were used for reference dosimetry.Main results.The SiC diode response was independent both of DPP and of pulse dose rate up to at least 11 Gy per pulse and 4 MGy s-1, respectively, with tolerable deviation for relative dosimetry (<3%). When measuring the percentage depth dose under ultra-high dose rate conditions, the SiC diode performed comparably well to the reference flashDiamond. The sensitivity reduction after 100 kGy accumulated dose was <2%. The SiC diode was able to follow the temporal structure of the 20 MeV electron beam even for irregular pulse estructures. The measured temperature coefficient was (-0.079 ± 0.005)%/°C.Significance.The results of this study demonstrate for the first time the suitability of silicon carbide diodes for relative dosimetry in ultra-high dose rate pulsed electron beams up to a DPP of 11 Gy per pulse.This work has received funding from Grant RTC-2017–6369–3 (GRACE) by MCIN/AEI/10.13039/ 501100011033 and ERDF ‘A way of making Europe’. This work has also received funding from the EMPIR programme cofinanced by the Participating States and from the European Union’s Horizon 2020 research and innovation program under project 18HLT04-UHDpulse (Schüller et al 2020).Peer reviewedIOP PublishingMinisterio de Ciencia e Innovación (España)Agencia Estatal de Investigación (España)European Commission0000-0002-6591-67440000-0002-1606-35460000-0002-9273-98190000-0003-4063-04130000-0002-0355-299XConsejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]202520252024info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Publisher's versioninfo:eu-repo/semantics/publishedVersionhttp://hdl.handle.net/10261/396130https://api.elsevier.com/content/abstract/scopus_id/85190898261reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Inglés#PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE#info:eu-repo/grantAgreement/EC/RTC-2017–6369–3/info:eu-repo/grantAgreement/EC/H2020/501100011033https://iopscience.iop.org/article/10.1088/1361-6560/ad37ebSíinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/3961302026-05-22T06:33:51Z
dc.title.none.fl_str_mv State-of-the-art silicon carbide diode dosimeters for ultra-high dose-per-pulse radiation at FLASH radiotherapy
title State-of-the-art silicon carbide diode dosimeters for ultra-high dose-per-pulse radiation at FLASH radiotherapy
spellingShingle State-of-the-art silicon carbide diode dosimeters for ultra-high dose-per-pulse radiation at FLASH radiotherapy
Fleta, Celeste
FLASH radiotherapy
dosimetry
silicon carbide
http://metadata.un.org/sdg/9
Build resilient infrastructure, promote inclusive and sustainable industrialization and foster innovation
title_short State-of-the-art silicon carbide diode dosimeters for ultra-high dose-per-pulse radiation at FLASH radiotherapy
title_full State-of-the-art silicon carbide diode dosimeters for ultra-high dose-per-pulse radiation at FLASH radiotherapy
title_fullStr State-of-the-art silicon carbide diode dosimeters for ultra-high dose-per-pulse radiation at FLASH radiotherapy
title_full_unstemmed State-of-the-art silicon carbide diode dosimeters for ultra-high dose-per-pulse radiation at FLASH radiotherapy
title_sort State-of-the-art silicon carbide diode dosimeters for ultra-high dose-per-pulse radiation at FLASH radiotherapy
dc.creator.none.fl_str_mv Fleta, Celeste
Pellegrini, Giulio
Godignon, Philippe
Rodríguez, Faustino Gómez
Paz-Martín, José
Kranzer, Rafael
Schüller, Andreas
author Fleta, Celeste
author_facet Fleta, Celeste
Pellegrini, Giulio
Godignon, Philippe
Rodríguez, Faustino Gómez
Paz-Martín, José
Kranzer, Rafael
Schüller, Andreas
author_role author
author2 Pellegrini, Giulio
Godignon, Philippe
Rodríguez, Faustino Gómez
Paz-Martín, José
Kranzer, Rafael
Schüller, Andreas
author2_role author
author
author
author
author
author
dc.contributor.none.fl_str_mv Ministerio de Ciencia e Innovación (España)
Agencia Estatal de Investigación (España)
European Commission
0000-0002-6591-6744
0000-0002-1606-3546
0000-0002-9273-9819
0000-0003-4063-0413
0000-0002-0355-299X
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
dc.subject.none.fl_str_mv FLASH radiotherapy
dosimetry
silicon carbide
http://metadata.un.org/sdg/9
Build resilient infrastructure, promote inclusive and sustainable industrialization and foster innovation
topic FLASH radiotherapy
dosimetry
silicon carbide
http://metadata.un.org/sdg/9
Build resilient infrastructure, promote inclusive and sustainable industrialization and foster innovation
description Objective.The successful implementation of FLASH radiotherapy in clinical settings, with typical dose rates >40 Gy s-1, requires accurate real-time dosimetry.Approach.Silicon carbide (SiC) p-n diode dosimeters designed for the stringent requirements of FLASH radiotherapy have been fabricated and characterized in an ultra-high pulse dose rate electron beam. The circular SiC PiN diodes were fabricated at IMB-CNM (CSIC) in 3μm epitaxial 4H-SiC. Their characterization was performed in PTB's ultra-high pulse dose rate reference electron beam. The SiC diode was operated without external bias voltage. The linearity of the diode response was investigated up to doses per pulse (DPP) of 11 Gy and pulse durations ranging from 3 to 0.5μs. Percentage depth dose measurements were performed in ultra-high dose per pulse conditions. The effect of the total accumulated dose of 20 MeV electrons in the SiC diode sensitivity was evaluated. The temperature dependence of the response of the SiC diode was measured in the range 19 °C-38 °C. The temporal response of the diode was compared to the time-resolved beam current during each electron beam pulse. A diamond prototype detector (flashDiamond) and Alanine measurements were used for reference dosimetry.Main results.The SiC diode response was independent both of DPP and of pulse dose rate up to at least 11 Gy per pulse and 4 MGy s-1, respectively, with tolerable deviation for relative dosimetry (<3%). When measuring the percentage depth dose under ultra-high dose rate conditions, the SiC diode performed comparably well to the reference flashDiamond. The sensitivity reduction after 100 kGy accumulated dose was <2%. The SiC diode was able to follow the temporal structure of the 20 MeV electron beam even for irregular pulse estructures. The measured temperature coefficient was (-0.079 ± 0.005)%/°C.Significance.The results of this study demonstrate for the first time the suitability of silicon carbide diodes for relative dosimetry in ultra-high dose rate pulsed electron beams up to a DPP of 11 Gy per pulse.
publishDate 2024
dc.date.none.fl_str_mv 2024
2025
2025
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
Publisher's version
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/396130
https://api.elsevier.com/content/abstract/scopus_id/85190898261
url http://hdl.handle.net/10261/396130
https://api.elsevier.com/content/abstract/scopus_id/85190898261
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv #PLACEHOLDER_PARENT_METADATA_VALUE#
#PLACEHOLDER_PARENT_METADATA_VALUE#
info:eu-repo/grantAgreement/EC/RTC-2017–6369–3/
info:eu-repo/grantAgreement/EC/H2020/501100011033
https://iopscience.iop.org/article/10.1088/1361-6560/ad37eb
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv IOP Publishing
publisher.none.fl_str_mv IOP Publishing
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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