MOSFET dynamic thermal sensor for IC testing applications

This paper analyses how a single metal-oxide-semiconductor field-effect transistor (MOSFET) can be employed as a thermal sensor to measure on-chip dynamic thermal signals caused by a power-dissipating circuit under test (CUT). The measurement is subjected to two low-pass filters (LPF). The first LPF...

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Detalles Bibliográficos
Autores: Reverter Cubarsí, Ferran|||0000-0003-1653-0519, Perpiñà Gilabet, Xavier, Barajas Ojeda, Enrique|||0000-0002-2072-2268, León, Javier, Vellvehi, Miquel, Jordà, Xavier, Altet Sanahujes, Josep|||0000-0002-6939-6475
Tipo de recurso: artículo
Fecha de publicación:2016
País:España
Institución:Universitat Politècnica de Catalunya (UPC)
Repositorio:UPCommons. Portal del coneixement obert de la UPC
Idioma:inglés
OAI Identifier:oai:upcommons.upc.edu:2117/100287
Acceso en línea:https://hdl.handle.net/2117/100287
https://dx.doi.org/10.1016/j.sna.2016.03.016
Access Level:acceso abierto
Palabra clave:Metal oxide semiconductor field-effect transistors
IC testing
MOSFET
RF testing
Temperature sensor
Thermal coupling
Thermal testing
INTEGRATED-CIRCUITS
TEMPERATURE SENSORS
BIPOLAR-TRANSISTORS
DETECTOR
Transistors MOSFET
Àrees temàtiques de la UPC::Enginyeria electrònica
Descripción
Sumario:This paper analyses how a single metal-oxide-semiconductor field-effect transistor (MOSFET) can be employed as a thermal sensor to measure on-chip dynamic thermal signals caused by a power-dissipating circuit under test (CUT). The measurement is subjected to two low-pass filters (LPF). The first LPF depends on the thermal properties of the heat-conduction medium (i.e. silicon) and the CUT-sensor distance, whereas the second depends on the electrical properties of the sensing circuit such as the bias current and the dimensions of the MOSFET sensor. This is evaluated along the paper through theoretical models, simulations, and experimental data resulting from a chip fabricated in 0.35 mu m CMOS technology. Finally, the proposed thermal sensor and the knowledge extracted from this paper are applied to estimate the linearity of a radio-frequency (RF) amplifier. (C) 2016 Elsevier B.V. All rights reserved.