Phonon engineering in isotopically disordered silicon nanowires
The introduction of stable isotopes in the fabrication of semiconductor nanowires provides an additional degree of freedom to manipulate their basic properties, design an entirely new class of devices, and highlight subtle but important nanoscale and quantum phenomena. With this perspective, we repo...
| Autores: | , , , , , , , , , , , |
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| Formato: | artículo |
| Fecha de publicación: | 2015 |
| País: | España |
| Recursos: | Universitat Autònoma de Barcelona |
| Repositorio: | Dipòsit Digital de Documents de la UAB |
| Idioma: | inglés |
| OAI Identifier: | oai:ddd.uab.cat:200188 |
| Acesso em linha: | https://ddd.uab.cat/record/200188 https://dx.doi.org/urn:doi:10.1021/acs.nanolett.5b00708 |
| Access Level: | acceso abierto |
| Palavra-chave: | Atom probe tomography Nanowires Phonons Raman spectroscopy Stable isotopes Thermal conductivity |
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Phonon engineering in isotopically disordered silicon nanowiresMukherjee, Samik|||0000-0002-5279-1110Givan, UriSenz, StephanBergeron, A.Francoeur, Sebastien|||0000-0002-6129-7026De La Mata, Maria|||0000-0002-1581-4838Arbiol i Cobos, Jordi|||0000-0002-0695-1726Sekiguchi, T.Itoh, K. M.Isheim, D.Seidman, D. N.Moutanabbir, Oussama|||0000-0002-0721-3696Atom probe tomographyNanowiresPhononsRaman spectroscopyStable isotopesThermal conductivityThe introduction of stable isotopes in the fabrication of semiconductor nanowires provides an additional degree of freedom to manipulate their basic properties, design an entirely new class of devices, and highlight subtle but important nanoscale and quantum phenomena. With this perspective, we report on phonon engineering in metal-catalyzed silicon nanowires with tailor-made isotopic compositions grown using isotopically enriched silane precursors ²⁸SiH, ²⁹SiH, and ³⁰SiH with purity better than 99.9%. More specifically, isotopically mixed nanowires ²⁸Si ³⁰Si with a composition close to the highest mass disorder (x ∼ 0.5) were investigated. The effect of mass disorder on the phonon behavior was elucidated and compared to that in isotopically pure Si nanowires having a similar reduced mass. We found that the disorder-induced enhancement in phonon scattering in isotopically mixed nanowires is unexpectedly much more significant than in bulk crystals of close isotopic compositions. This effect is explained by a nonuniform distribution of ²⁸Si and ³⁰Si isotopes in the grown isotopically mixed nanowires with local compositions ranging from x = ∼0.25 to 0.70. Moreover, we also observed that upon heating, phonons in ²⁸Si ³⁰Si nanowires behave remarkably differently from those in ²⁹Si nanowires suggesting a reduced thermal conductivity induced by mass disorder. Using Raman nanothermometry, we found that the thermal conductivity of isotopically mixed ²⁸Si Si nanowires is ∼30% lower than that of isotopically pure ²⁹Si nanowires in agreement with theoretical predictions. (Figure Presented). 22015-01-0120152015-01-01Articlehttp://purl.org/coar/resource_type/c_6501AMhttp://purl.org/coar/version/c_ab4af688f83e57aainfo:eu-repo/semantics/articleapplication/pdfhttps://ddd.uab.cat/record/200188https://dx.doi.org/urn:doi:10.1021/acs.nanolett.5b00708reponame:Dipòsit Digital de Documents de la UABinstname:Universitat Autònoma de BarcelonaInglésengMinisterio de Economía y Competitividad https://doi.org/10.13039/501100003329 MAT2014-51480Agència de Gestió d'Ajuts Universitaris i de Recerca https://doi.org/10.13039/501100003030 2014/SGR-1638open accesshttp://purl.org/coar/access_right/c_abf2Aquest material està protegit per drets d'autor i/o drets afins. Podeu utilitzar aquest material en funció del que permet la legislació de drets d'autor i drets afins d'aplicació al vostre cas. Per a d'altres usos heu d'obtenir permís del(s) titular(s) de drets.https://rightsstatements.org/vocab/InC/1.0/info:eu-repo/semantics/openAccessoai:ddd.uab.cat:2001882026-06-06T12:50:31Z |
| dc.title.none.fl_str_mv |
Phonon engineering in isotopically disordered silicon nanowires |
| title |
Phonon engineering in isotopically disordered silicon nanowires |
| spellingShingle |
Phonon engineering in isotopically disordered silicon nanowires Mukherjee, Samik|||0000-0002-5279-1110 Atom probe tomography Nanowires Phonons Raman spectroscopy Stable isotopes Thermal conductivity |
| title_short |
Phonon engineering in isotopically disordered silicon nanowires |
| title_full |
Phonon engineering in isotopically disordered silicon nanowires |
| title_fullStr |
Phonon engineering in isotopically disordered silicon nanowires |
| title_full_unstemmed |
Phonon engineering in isotopically disordered silicon nanowires |
| title_sort |
Phonon engineering in isotopically disordered silicon nanowires |
| dc.creator.none.fl_str_mv |
Mukherjee, Samik|||0000-0002-5279-1110 Givan, Uri Senz, Stephan Bergeron, A. Francoeur, Sebastien|||0000-0002-6129-7026 De La Mata, Maria|||0000-0002-1581-4838 Arbiol i Cobos, Jordi|||0000-0002-0695-1726 Sekiguchi, T. Itoh, K. M. Isheim, D. Seidman, D. N. Moutanabbir, Oussama|||0000-0002-0721-3696 |
| author |
Mukherjee, Samik|||0000-0002-5279-1110 |
| author_facet |
Mukherjee, Samik|||0000-0002-5279-1110 Givan, Uri Senz, Stephan Bergeron, A. Francoeur, Sebastien|||0000-0002-6129-7026 De La Mata, Maria|||0000-0002-1581-4838 Arbiol i Cobos, Jordi|||0000-0002-0695-1726 Sekiguchi, T. Itoh, K. M. Isheim, D. Seidman, D. N. Moutanabbir, Oussama|||0000-0002-0721-3696 |
| author_role |
author |
| author2 |
Givan, Uri Senz, Stephan Bergeron, A. Francoeur, Sebastien|||0000-0002-6129-7026 De La Mata, Maria|||0000-0002-1581-4838 Arbiol i Cobos, Jordi|||0000-0002-0695-1726 Sekiguchi, T. Itoh, K. M. Isheim, D. Seidman, D. N. Moutanabbir, Oussama|||0000-0002-0721-3696 |
| author2_role |
author author author author author author author author author author author |
| dc.subject.none.fl_str_mv |
Atom probe tomography Nanowires Phonons Raman spectroscopy Stable isotopes Thermal conductivity |
| topic |
Atom probe tomography Nanowires Phonons Raman spectroscopy Stable isotopes Thermal conductivity |
| description |
The introduction of stable isotopes in the fabrication of semiconductor nanowires provides an additional degree of freedom to manipulate their basic properties, design an entirely new class of devices, and highlight subtle but important nanoscale and quantum phenomena. With this perspective, we report on phonon engineering in metal-catalyzed silicon nanowires with tailor-made isotopic compositions grown using isotopically enriched silane precursors ²⁸SiH, ²⁹SiH, and ³⁰SiH with purity better than 99.9%. More specifically, isotopically mixed nanowires ²⁸Si ³⁰Si with a composition close to the highest mass disorder (x ∼ 0.5) were investigated. The effect of mass disorder on the phonon behavior was elucidated and compared to that in isotopically pure Si nanowires having a similar reduced mass. We found that the disorder-induced enhancement in phonon scattering in isotopically mixed nanowires is unexpectedly much more significant than in bulk crystals of close isotopic compositions. This effect is explained by a nonuniform distribution of ²⁸Si and ³⁰Si isotopes in the grown isotopically mixed nanowires with local compositions ranging from x = ∼0.25 to 0.70. Moreover, we also observed that upon heating, phonons in ²⁸Si ³⁰Si nanowires behave remarkably differently from those in ²⁹Si nanowires suggesting a reduced thermal conductivity induced by mass disorder. Using Raman nanothermometry, we found that the thermal conductivity of isotopically mixed ²⁸Si Si nanowires is ∼30% lower than that of isotopically pure ²⁹Si nanowires in agreement with theoretical predictions. (Figure Presented). |
| publishDate |
2015 |
| dc.date.none.fl_str_mv |
2 2015-01-01 2015 2015-01-01 |
| dc.type.none.fl_str_mv |
Article http://purl.org/coar/resource_type/c_6501 AM http://purl.org/coar/version/c_ab4af688f83e57aa |
| dc.type.openaire.fl_str_mv |
info:eu-repo/semantics/article |
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article |
| dc.identifier.none.fl_str_mv |
https://ddd.uab.cat/record/200188 https://dx.doi.org/urn:doi:10.1021/acs.nanolett.5b00708 |
| url |
https://ddd.uab.cat/record/200188 https://dx.doi.org/urn:doi:10.1021/acs.nanolett.5b00708 |
| dc.language.none.fl_str_mv |
Inglés eng |
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Inglés |
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eng |
| dc.relation.none.fl_str_mv |
Ministerio de Economía y Competitividad https://doi.org/10.13039/501100003329 MAT2014-51480 Agència de Gestió d'Ajuts Universitaris i de Recerca https://doi.org/10.13039/501100003030 2014/SGR-1638 |
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open access http://purl.org/coar/access_right/c_abf2 https://rightsstatements.org/vocab/InC/1.0/ |
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info:eu-repo/semantics/openAccess |
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open access http://purl.org/coar/access_right/c_abf2 https://rightsstatements.org/vocab/InC/1.0/ |
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openAccess |
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application/pdf |
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