Nanocrystalline silicon thin films on PEN substrates

We study the structural and electrical properties of intrinsic layer growth close to the transition between amorphous silicon (a-Si:H) and nanocrystalline silicon (nc-Si:H), deposited on glass and PEN without intentional heating. These samples showed different behaviour in Raman shift and XRD spectr...

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Authors: Villar, Fernando, Escarré i Palou, Jordi, Antony, Aldrin, Stella, Marco, Rojas Tarazona, Fredy E., Asensi López, José Miguel, Bertomeu i Balagueró, Joan, Andreu i Batallé, Jordi
Format: article
Status:Versión aceptada para publicación
Publication Date:2007
Country:España
Institution:Universidad de Barcelona
Repository:Dipòsit Digital de la UB
OAI Identifier:oai:diposit.ub.edu:2445/98100
Online Access:https://hdl.handle.net/2445/98100
Access Level:Open access
Keyword:Cèl·lules solars
Silici
Solar cells
Silicon
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spelling Nanocrystalline silicon thin films on PEN substratesVillar, FernandoEscarré i Palou, JordiAntony, AldrinStella, MarcoRojas Tarazona, Fredy E.Asensi López, José MiguelBertomeu i Balagueró, JoanAndreu i Batallé, JordiCèl·lules solarsSiliciSolar cellsSiliconWe study the structural and electrical properties of intrinsic layer growth close to the transition between amorphous silicon (a-Si:H) and nanocrystalline silicon (nc-Si:H), deposited on glass and PEN without intentional heating. These samples showed different behaviour in Raman shift and XRD spectra when compared with that of samples deposited at 200 °C. Electrical properties of these films also reflect the transition between a-Si:H and nc-Si:H, and put in evidence some differences between the microstructure of the films grown on PEN and on glass. P- and n-doped layers were deposited onto glass substrate without intentional heating and at 100 °C with thicknesses ranging from 1000 nm to 35 nm. Conductivity measurements indicate the capability of doping this material, but, for very thin layers, substrate heating was found to be essential.Elsevier B.V.2007info:eu-repo/semantics/articleinfo:eu-repo/semantics/acceptedVersionapplication/pdfhttps://hdl.handle.net/2445/98100Articles publicats en revistes (Física Aplicada)reponame:Dipòsit Digital de la UBinstname:Universidad de BarcelonaInglésVersió postprint del document publicat a: http://dx.doi.org/10.1016/j.tsf.2007.06.196Thin Solid Films, 2007, vol. 516, num. 5, p. 584-587http://dx.doi.org/10.1016/j.tsf.2007.06.196(c) Elsevier B.V., 2007info:eu-repo/semantics/openAccessoai:diposit.ub.edu:2445/981002026-05-27T06:46:51Z
dc.title.none.fl_str_mv Nanocrystalline silicon thin films on PEN substrates
title Nanocrystalline silicon thin films on PEN substrates
spellingShingle Nanocrystalline silicon thin films on PEN substrates
Villar, Fernando
Cèl·lules solars
Silici
Solar cells
Silicon
title_short Nanocrystalline silicon thin films on PEN substrates
title_full Nanocrystalline silicon thin films on PEN substrates
title_fullStr Nanocrystalline silicon thin films on PEN substrates
title_full_unstemmed Nanocrystalline silicon thin films on PEN substrates
title_sort Nanocrystalline silicon thin films on PEN substrates
dc.creator.none.fl_str_mv Villar, Fernando
Escarré i Palou, Jordi
Antony, Aldrin
Stella, Marco
Rojas Tarazona, Fredy E.
Asensi López, José Miguel
Bertomeu i Balagueró, Joan
Andreu i Batallé, Jordi
author Villar, Fernando
author_facet Villar, Fernando
Escarré i Palou, Jordi
Antony, Aldrin
Stella, Marco
Rojas Tarazona, Fredy E.
Asensi López, José Miguel
Bertomeu i Balagueró, Joan
Andreu i Batallé, Jordi
author_role author
author2 Escarré i Palou, Jordi
Antony, Aldrin
Stella, Marco
Rojas Tarazona, Fredy E.
Asensi López, José Miguel
Bertomeu i Balagueró, Joan
Andreu i Batallé, Jordi
author2_role author
author
author
author
author
author
author
dc.subject.none.fl_str_mv Cèl·lules solars
Silici
Solar cells
Silicon
topic Cèl·lules solars
Silici
Solar cells
Silicon
description We study the structural and electrical properties of intrinsic layer growth close to the transition between amorphous silicon (a-Si:H) and nanocrystalline silicon (nc-Si:H), deposited on glass and PEN without intentional heating. These samples showed different behaviour in Raman shift and XRD spectra when compared with that of samples deposited at 200 °C. Electrical properties of these films also reflect the transition between a-Si:H and nc-Si:H, and put in evidence some differences between the microstructure of the films grown on PEN and on glass. P- and n-doped layers were deposited onto glass substrate without intentional heating and at 100 °C with thicknesses ranging from 1000 nm to 35 nm. Conductivity measurements indicate the capability of doping this material, but, for very thin layers, substrate heating was found to be essential.
publishDate 2007
dc.date.none.fl_str_mv 2007
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/acceptedVersion
format article
status_str acceptedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/2445/98100
url https://hdl.handle.net/2445/98100
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Versió postprint del document publicat a: http://dx.doi.org/10.1016/j.tsf.2007.06.196
Thin Solid Films, 2007, vol. 516, num. 5, p. 584-587
http://dx.doi.org/10.1016/j.tsf.2007.06.196
dc.rights.none.fl_str_mv (c) Elsevier B.V., 2007
info:eu-repo/semantics/openAccess
rights_invalid_str_mv (c) Elsevier B.V., 2007
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Elsevier B.V.
publisher.none.fl_str_mv Elsevier B.V.
dc.source.none.fl_str_mv Articles publicats en revistes (Física Aplicada)
reponame:Dipòsit Digital de la UB
instname:Universidad de Barcelona
instname_str Universidad de Barcelona
reponame_str Dipòsit Digital de la UB
collection Dipòsit Digital de la UB
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,301603

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