CMOS OTA-C high-frequency sinusoidal oscillators

Several topology families are given to implement practical CMOS sinusoidal oscillators by using operational transconductance amplifier-capacitor (OTA-C) techniques. Design techniques are proposed taking into account the CMOS OTA's dominant nonidealities. Building blocks are presented for amplit...

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Autores: Linares Barranco, Bernabé, Rodríguez Vázquez, Ángel Benito, Sánchez Sinencio, Edgar, Huertas Díaz, José Luis
Tipo de recurso: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:1991
País:España
Institución:Universidad de Sevilla (US)
Repositorio:idUS. Depósito de Investigación de la Universidad de Sevilla
OAI Identifier:oai:idus.us.es:11441/89955
Acceso en línea:https://hdl.handle.net/11441/89955
https://doi.org/10.1109/4.68133
Access Level:acceso abierto
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spelling CMOS OTA-C high-frequency sinusoidal oscillatorsLinares Barranco, BernabéRodríguez Vázquez, Ángel BenitoSánchez Sinencio, EdgarHuertas Díaz, José LuisSeveral topology families are given to implement practical CMOS sinusoidal oscillators by using operational transconductance amplifier-capacitor (OTA-C) techniques. Design techniques are proposed taking into account the CMOS OTA's dominant nonidealities. Building blocks are presented for amplitude control, both by automatic gain control (AGC) schemes and by limitation schemes. Experimental results from 3- and 2- mu m CMOS (MOSIS) prototypes that exhibit oscillation frequencies of up to 69 MHz are obtained. The amplitudes can be adjusted between 1 V peak to peak and 100 mV peak to peak. Total harmonic distortions from 2.8% down to 0.2% have been measured experimentally.Comisión Interministerial de Ciencia y Tecnología ME87-0004Institute of Electrical and Electronics EngineersElectrónica y Electromagnetismo1991info:eu-repo/semantics/articleinfo:eu-repo/semantics/acceptedVersionapplication/pdfapplication/pdfhttps://hdl.handle.net/11441/89955https://doi.org/10.1109/4.68133reponame:idUS. Depósito de Investigación de la Universidad de Sevillainstname:Universidad de Sevilla (US)InglésIEEE Journal of Solid-State Circuits, 26 (2), 160-165.ME87-0004https://doi.org/10.1109/4.68133info:eu-repo/semantics/openAccessoai:idus.us.es:11441/899552026-06-17T12:51:07Z
dc.title.none.fl_str_mv CMOS OTA-C high-frequency sinusoidal oscillators
title CMOS OTA-C high-frequency sinusoidal oscillators
spellingShingle CMOS OTA-C high-frequency sinusoidal oscillators
Linares Barranco, Bernabé
title_short CMOS OTA-C high-frequency sinusoidal oscillators
title_full CMOS OTA-C high-frequency sinusoidal oscillators
title_fullStr CMOS OTA-C high-frequency sinusoidal oscillators
title_full_unstemmed CMOS OTA-C high-frequency sinusoidal oscillators
title_sort CMOS OTA-C high-frequency sinusoidal oscillators
dc.creator.none.fl_str_mv Linares Barranco, Bernabé
Rodríguez Vázquez, Ángel Benito
Sánchez Sinencio, Edgar
Huertas Díaz, José Luis
author Linares Barranco, Bernabé
author_facet Linares Barranco, Bernabé
Rodríguez Vázquez, Ángel Benito
Sánchez Sinencio, Edgar
Huertas Díaz, José Luis
author_role author
author2 Rodríguez Vázquez, Ángel Benito
Sánchez Sinencio, Edgar
Huertas Díaz, José Luis
author2_role author
author
author
dc.contributor.none.fl_str_mv Electrónica y Electromagnetismo
description Several topology families are given to implement practical CMOS sinusoidal oscillators by using operational transconductance amplifier-capacitor (OTA-C) techniques. Design techniques are proposed taking into account the CMOS OTA's dominant nonidealities. Building blocks are presented for amplitude control, both by automatic gain control (AGC) schemes and by limitation schemes. Experimental results from 3- and 2- mu m CMOS (MOSIS) prototypes that exhibit oscillation frequencies of up to 69 MHz are obtained. The amplitudes can be adjusted between 1 V peak to peak and 100 mV peak to peak. Total harmonic distortions from 2.8% down to 0.2% have been measured experimentally.
publishDate 1991
dc.date.none.fl_str_mv 1991
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/acceptedVersion
format article
status_str acceptedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/11441/89955
https://doi.org/10.1109/4.68133
url https://hdl.handle.net/11441/89955
https://doi.org/10.1109/4.68133
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv IEEE Journal of Solid-State Circuits, 26 (2), 160-165.
ME87-0004
https://doi.org/10.1109/4.68133
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv Institute of Electrical and Electronics Engineers
publisher.none.fl_str_mv Institute of Electrical and Electronics Engineers
dc.source.none.fl_str_mv reponame:idUS. Depósito de Investigación de la Universidad de Sevilla
instname:Universidad de Sevilla (US)
instname_str Universidad de Sevilla (US)
reponame_str idUS. Depósito de Investigación de la Universidad de Sevilla
collection idUS. Depósito de Investigación de la Universidad de Sevilla
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,301603

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