Quality improvement of AlInN/p-Si heterojunctions with AlN buffer layer deposited by RF-sputtering
The effect of an AlN buffer layer thickness on the structural, morphological and optical properties of n- Al0.37In0.63N deposited on p-Si (111) by radio-frequency sputtering was studied. The AlN/ Al0.37In0.63N samples were structurally characterized via X-ray diffraction and high-resolution transmis...
| Autores: | , , , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2018 |
| País: | España |
| Institución: | Universidad de Alcalá (UAH) |
| Repositorio: | e_Buah Biblioteca Digital Universidad de Alcalá |
| Idioma: | inglés |
| OAI Identifier: | oai:ebuah.uah.es:10017/36406 |
| Acceso en línea: | http://hdl.handle.net/10017/36406 https://dx.doi.org/10.1016/j.jallcom.2018.08.059 |
| Access Level: | acceso abierto |
| Palabra clave: | III-nitrides AlInN AlN buffer RF-sputtering Characterization Photovoltaics Electrónica Electronics |
| Sumario: | The effect of an AlN buffer layer thickness on the structural, morphological and optical properties of n- Al0.37In0.63N deposited on p-Si (111) by radio-frequency sputtering was studied. The AlN/ Al0.37In0.63N samples were structurally characterized via X-ray diffraction and high-resolution transmission electron microscopy showing that all layers present wurtzite structure highly oriented along the c-axis with no phase separation. All the samples present compact morphology with root-mean-square surface roughness below 1.7 nm and low-temperature photoluminescence emission centered at 1.8 eV. The presence of the buffer layer leads to an improvement of the structural quality, evidenced by a reduction of the full width at half maximum of the rocking curve around the (0002) AlInN reflection from 8° to 5°. Selected samples were processed and tested as solar cells showing a good rectifying behavior in the dark and an open circuit voltage of 0.35 V, a short circuit current density of 22.2 mA/cm2 and fill factor of 20% under 1 sun AM1.5G illumination. |
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