Quality improvement of AlInN/p-Si heterojunctions with AlN buffer layer deposited by RF-sputtering

The effect of an AlN buffer layer thickness on the structural, morphological and optical properties of n- Al0.37In0.63N deposited on p-Si (111) by radio-frequency sputtering was studied. The AlN/ Al0.37In0.63N samples were structurally characterized via X-ray diffraction and high-resolution transmis...

Descripción completa

Detalles Bibliográficos
Autores: Núñez Cascajero, Arántzazu, Valdueza Felip, Sirona|||0000-0003-1817-5354, Blasco Chicano, Rodrigo, Mata Fernández, María de la, Molina Rubio, Sergio Ignacio, González Herráez, Miguel|||0000-0003-2555-2971, Monroy, Eva, Naranjo Vega, Fernando Bernabé|||0000-0002-2119-6749
Tipo de recurso: artículo
Fecha de publicación:2018
País:España
Institución:Universidad de Alcalá (UAH)
Repositorio:e_Buah Biblioteca Digital Universidad de Alcalá
Idioma:inglés
OAI Identifier:oai:ebuah.uah.es:10017/36406
Acceso en línea:http://hdl.handle.net/10017/36406
https://dx.doi.org/10.1016/j.jallcom.2018.08.059
Access Level:acceso abierto
Palabra clave:III-nitrides
AlInN
AlN buffer
RF-sputtering
Characterization
Photovoltaics
Electrónica
Electronics
Descripción
Sumario:The effect of an AlN buffer layer thickness on the structural, morphological and optical properties of n- Al0.37In0.63N deposited on p-Si (111) by radio-frequency sputtering was studied. The AlN/ Al0.37In0.63N samples were structurally characterized via X-ray diffraction and high-resolution transmission electron microscopy showing that all layers present wurtzite structure highly oriented along the c-axis with no phase separation. All the samples present compact morphology with root-mean-square surface roughness below 1.7 nm and low-temperature photoluminescence emission centered at 1.8 eV. The presence of the buffer layer leads to an improvement of the structural quality, evidenced by a reduction of the full width at half maximum of the rocking curve around the (0002) AlInN reflection from 8° to 5°. Selected samples were processed and tested as solar cells showing a good rectifying behavior in the dark and an open circuit voltage of 0.35 V, a short circuit current density of 22.2 mA/cm2 and fill factor of 20% under 1 sun AM1.5G illumination.