Kinetics of Volatile and Nonvolatile Halide Perovskite Devices: The Conductance-Activated Quasi-Linear Memristor (CALM) Model

[EN] Memristors stand out as promising components in the landscape of memory and computing. Memristors are generally defined by a conductance mechanism containing a state variable that imparts a memory effect. The current¿voltage cycling causes transitions of conductance, which are determined by dif...

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Autores: Bou, Agustín, Gonzales, Cedric, Vaynzof, Yana, Guerrero, Antonio, Boix, Pablo P.|||0000-0001-9518-7549, Bisquert, Juan|||0000-0003-4987-4887
Tipo de recurso: artículo
Fecha de publicación:2024
País:España
Institución:Universitat Politècnica de València (UPV)
Repositorio:RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
Idioma:inglés
OAI Identifier:oai:riunet.upv.es:10251/213326
Acceso en línea:https://riunet.upv.es/handle/10251/213326
Access Level:acceso abierto
Palabra clave:Memristors
Memory effect
Conductance mechanism
Halide perovskites
Neuroscience-inspired computing
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spelling Kinetics of Volatile and Nonvolatile Halide Perovskite Devices: The Conductance-Activated Quasi-Linear Memristor (CALM) ModelBou, AgustínGonzales, CedricVaynzof, YanaGuerrero, AntonioBoix, Pablo P.|||0000-0001-9518-7549Bisquert, Juan|||0000-0003-4987-4887MemristorsMemory effectConductance mechanismHalide perovskitesNeuroscience-inspired computing[EN] Memristors stand out as promising components in the landscape of memory and computing. Memristors are generally defined by a conductance mechanism containing a state variable that imparts a memory effect. The current¿voltage cycling causes transitions of conductance, which are determined by different physical mechanisms, such as the formation of conducting filaments in an insulating surrounding. Here, we provide a unified description of the set and reset processes using a conductance-activated quasi-linear memristor (CALM) model with a unique voltage-dependent relaxation time of the memory variable. We focus on halide perovskite memristors and their intersection with neuroscience-inspired computing. We show that the modeling approach adeptly replicates the experimental traits of both volatile and nonvolatile memristors. Its versatility extends across various device materials and configurations, as W/SiGe/a-Si/Ag, Si/SiO2/Ag, and SrRuO3/Cr-SrZrO3/Au memristors, capturing nuanced behaviors such as scan rate and upper vertex dependence. The model also describes the response to sequences of voltage pulses that cause synaptic potentiation effects. This model is a potent tool for comprehending and probing the dynamical response of memristors by indicating the relaxation properties that control observable responses.We thank Grant EUR2022-134045 (PEROMEM) funded by MICIU/AEI/10.13039/501100011033 and by European Union NextGenerationEU/PRTR.American Chemical SocietyInstituto Universitario Mixto de Tecnología QuímicaAGENCIA ESTATAL DE INVESTIGACIONRepositorio Institucional de la Universitat Politècnica de València Riunet20242024-12-19journal articlehttp://purl.org/coar/resource_type/c_6501VoRhttp://purl.org/coar/version/c_970fb48d4fbd8a85info:eu-repo/semantics/articleapplication/pdfhttps://riunet.upv.es/handle/10251/213326reponame:RiuNet. Repositorio Institucional de la Universitat Politécnica de Valénciainstname:Universitat Politècnica de València (UPV)InglésengAgencia Estatal de Investigación http://dx.doi.org/10.13039/501100011033 EUR2022-134045 MEMRISTORES DE PEROVSKITA PARA REDES DE IMPULSOSopen accesshttp://purl.org/coar/access_right/c_abf2Reconocimiento (by)http://creativecommons.org/licenses/by/4.0/info:eu-repo/semantics/openAccessoai:riunet.upv.es:10251/2133262026-06-13T07:49:27Z
dc.title.none.fl_str_mv Kinetics of Volatile and Nonvolatile Halide Perovskite Devices: The Conductance-Activated Quasi-Linear Memristor (CALM) Model
title Kinetics of Volatile and Nonvolatile Halide Perovskite Devices: The Conductance-Activated Quasi-Linear Memristor (CALM) Model
spellingShingle Kinetics of Volatile and Nonvolatile Halide Perovskite Devices: The Conductance-Activated Quasi-Linear Memristor (CALM) Model
Bou, Agustín
Memristors
Memory effect
Conductance mechanism
Halide perovskites
Neuroscience-inspired computing
title_short Kinetics of Volatile and Nonvolatile Halide Perovskite Devices: The Conductance-Activated Quasi-Linear Memristor (CALM) Model
title_full Kinetics of Volatile and Nonvolatile Halide Perovskite Devices: The Conductance-Activated Quasi-Linear Memristor (CALM) Model
title_fullStr Kinetics of Volatile and Nonvolatile Halide Perovskite Devices: The Conductance-Activated Quasi-Linear Memristor (CALM) Model
title_full_unstemmed Kinetics of Volatile and Nonvolatile Halide Perovskite Devices: The Conductance-Activated Quasi-Linear Memristor (CALM) Model
title_sort Kinetics of Volatile and Nonvolatile Halide Perovskite Devices: The Conductance-Activated Quasi-Linear Memristor (CALM) Model
dc.creator.none.fl_str_mv Bou, Agustín
Gonzales, Cedric
Vaynzof, Yana
Guerrero, Antonio
Boix, Pablo P.|||0000-0001-9518-7549
Bisquert, Juan|||0000-0003-4987-4887
author Bou, Agustín
author_facet Bou, Agustín
Gonzales, Cedric
Vaynzof, Yana
Guerrero, Antonio
Boix, Pablo P.|||0000-0001-9518-7549
Bisquert, Juan|||0000-0003-4987-4887
author_role author
author2 Gonzales, Cedric
Vaynzof, Yana
Guerrero, Antonio
Boix, Pablo P.|||0000-0001-9518-7549
Bisquert, Juan|||0000-0003-4987-4887
author2_role author
author
author
author
author
dc.contributor.none.fl_str_mv Instituto Universitario Mixto de Tecnología Química
AGENCIA ESTATAL DE INVESTIGACION
Repositorio Institucional de la Universitat Politècnica de València Riunet
dc.subject.none.fl_str_mv Memristors
Memory effect
Conductance mechanism
Halide perovskites
Neuroscience-inspired computing
topic Memristors
Memory effect
Conductance mechanism
Halide perovskites
Neuroscience-inspired computing
description [EN] Memristors stand out as promising components in the landscape of memory and computing. Memristors are generally defined by a conductance mechanism containing a state variable that imparts a memory effect. The current¿voltage cycling causes transitions of conductance, which are determined by different physical mechanisms, such as the formation of conducting filaments in an insulating surrounding. Here, we provide a unified description of the set and reset processes using a conductance-activated quasi-linear memristor (CALM) model with a unique voltage-dependent relaxation time of the memory variable. We focus on halide perovskite memristors and their intersection with neuroscience-inspired computing. We show that the modeling approach adeptly replicates the experimental traits of both volatile and nonvolatile memristors. Its versatility extends across various device materials and configurations, as W/SiGe/a-Si/Ag, Si/SiO2/Ag, and SrRuO3/Cr-SrZrO3/Au memristors, capturing nuanced behaviors such as scan rate and upper vertex dependence. The model also describes the response to sequences of voltage pulses that cause synaptic potentiation effects. This model is a potent tool for comprehending and probing the dynamical response of memristors by indicating the relaxation properties that control observable responses.
publishDate 2024
dc.date.none.fl_str_mv 2024
2024-12-19
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
VoR
http://purl.org/coar/version/c_970fb48d4fbd8a85
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://riunet.upv.es/handle/10251/213326
url https://riunet.upv.es/handle/10251/213326
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.relation.none.fl_str_mv Agencia Estatal de Investigación http://dx.doi.org/10.13039/501100011033 EUR2022-134045 MEMRISTORES DE PEROVSKITA PARA REDES DE IMPULSOS
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
Reconocimiento (by)
http://creativecommons.org/licenses/by/4.0/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
Reconocimiento (by)
http://creativecommons.org/licenses/by/4.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv American Chemical Society
publisher.none.fl_str_mv American Chemical Society
dc.source.none.fl_str_mv reponame:RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
instname:Universitat Politècnica de València (UPV)
instname_str Universitat Politècnica de València (UPV)
reponame_str RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
collection RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15.81155

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