Cita APA

Kong, X., Albert, S., Bengoechea Encabo, A., Sánchez García, M. A., Calleja Pardo, E., Calle Gómez, F., & Trampert, A. (2015). Lattice pulling effect and strain relaxation in axial (In, Ga)N/GaN nanowire heterostructures grown on GaN-buffered Si(111) substrate.

Citación estilo Chicago

Kong, Xiang, Steven Albert, Ana Bengoechea Encabo, Miguel Angel|||0000-0002-1494-9351 Sánchez García, Enrique|||0000-0002-3686-8982 Calleja Pardo, Fernando|||0000-0001-7869-6704 Calle Gómez, y Achim Trampert. Lattice Pulling Effect and Strain Relaxation in Axial (In, Ga)N/GaN Nanowire Heterostructures Grown On GaN-buffered Si(111) Substrate. 2015.

Cita MLA

Kong, Xiang, et al. Lattice Pulling Effect and Strain Relaxation in Axial (In, Ga)N/GaN Nanowire Heterostructures Grown On GaN-buffered Si(111) Substrate. 2015.