Ferroelectric control of interface spin filtering in multiferroic tunnel junctions

The electronic reconstruction occurring at oxide interfaces may be the source of interesting device concepts for future oxide electronics. Among oxide devices, multiferroic tunnel junctions are being actively investigated as they offer the possibility to modulate the junction current by independentl...

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Detalles Bibliográficos
Autores: Tornos Castillo, Javier, Gallego Toledo, Fernando, Hernández Martín, David, Orfila Rodríguez, Gloria, Cabero Piris, Mariona, Cuéllar Jiménez, Fabian Andrés, Arias Serna, Diego, Rivera Calzada, Alberto Carlos, Sefriuoi, Zouhair, León Yebra, Carlos, Santamaría Sánchez-Barriga, Jacobo
Tipo de recurso: artículo
Fecha de publicación:2019
País:España
Institución:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/13143
Acceso en línea:https://hdl.handle.net/20.500.14352/13143
Access Level:acceso abierto
Palabra clave:538.9
Electroresistance
Polarization
Field
Emission
Physics
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
id ES_dc63d3e345ca7eae636e7a9b1f7ca9eb
oai_identifier_str oai:docta.ucm.es:20.500.14352/13143
network_acronym_str ES
network_name_str España
repository_id_str
spelling Ferroelectric control of interface spin filtering in multiferroic tunnel junctionsTornos Castillo, JavierGallego Toledo, FernandoHernández Martín, DavidOrfila Rodríguez, GloriaCabero Piris, MarionaCuéllar Jiménez, Fabian AndrésArias Serna, DiegoRivera Calzada, Alberto CarlosSefriuoi, ZouhairLeón Yebra, CarlosSantamaría Sánchez-Barriga, Jacobo538.9ElectroresistancePolarizationFieldEmissionPhysicsFísica de materialesFísica del estado sólido2211 Física del Estado SólidoThe electronic reconstruction occurring at oxide interfaces may be the source of interesting device concepts for future oxide electronics. Among oxide devices, multiferroic tunnel junctions are being actively investigated as they offer the possibility to modulate the junction current by independently controlling the switching of the magnetization of the electrodes and of the ferroelectric polarization of the barrier. In this Letter, we show that the spin reconstruction at the interfaces of a La_0.7Sr_0.3MnO_3/BaTiO_3/La_0.7Sr_0.3MnO_3 multiferroic tunnel junction is the origin of a spin filtering functionality that can be turned on and off by reversing the ferroelectric polarization. The ferroelectrically controlled interface spin filter enables a giant electrical modulation of the tunneling magnetoresistance between values of 10% and 1000%, which could inspire device concepts in oxides-based low dissipation spintronics.American Physical SocietyUniversidad Complutense de Madrid20192019-01-2220192019-01-22journal articlehttp://purl.org/coar/resource_type/c_6501info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/13143reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/131432026-06-02T12:44:21Z
dc.title.none.fl_str_mv Ferroelectric control of interface spin filtering in multiferroic tunnel junctions
title Ferroelectric control of interface spin filtering in multiferroic tunnel junctions
spellingShingle Ferroelectric control of interface spin filtering in multiferroic tunnel junctions
Tornos Castillo, Javier
538.9
Electroresistance
Polarization
Field
Emission
Physics
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
title_short Ferroelectric control of interface spin filtering in multiferroic tunnel junctions
title_full Ferroelectric control of interface spin filtering in multiferroic tunnel junctions
title_fullStr Ferroelectric control of interface spin filtering in multiferroic tunnel junctions
title_full_unstemmed Ferroelectric control of interface spin filtering in multiferroic tunnel junctions
title_sort Ferroelectric control of interface spin filtering in multiferroic tunnel junctions
dc.creator.none.fl_str_mv Tornos Castillo, Javier
Gallego Toledo, Fernando
Hernández Martín, David
Orfila Rodríguez, Gloria
Cabero Piris, Mariona
Cuéllar Jiménez, Fabian Andrés
Arias Serna, Diego
Rivera Calzada, Alberto Carlos
Sefriuoi, Zouhair
León Yebra, Carlos
Santamaría Sánchez-Barriga, Jacobo
author Tornos Castillo, Javier
author_facet Tornos Castillo, Javier
Gallego Toledo, Fernando
Hernández Martín, David
Orfila Rodríguez, Gloria
Cabero Piris, Mariona
Cuéllar Jiménez, Fabian Andrés
Arias Serna, Diego
Rivera Calzada, Alberto Carlos
Sefriuoi, Zouhair
León Yebra, Carlos
Santamaría Sánchez-Barriga, Jacobo
author_role author
author2 Gallego Toledo, Fernando
Hernández Martín, David
Orfila Rodríguez, Gloria
Cabero Piris, Mariona
Cuéllar Jiménez, Fabian Andrés
Arias Serna, Diego
Rivera Calzada, Alberto Carlos
Sefriuoi, Zouhair
León Yebra, Carlos
Santamaría Sánchez-Barriga, Jacobo
author2_role author
author
author
author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 538.9
Electroresistance
Polarization
Field
Emission
Physics
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
topic 538.9
Electroresistance
Polarization
Field
Emission
Physics
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
description The electronic reconstruction occurring at oxide interfaces may be the source of interesting device concepts for future oxide electronics. Among oxide devices, multiferroic tunnel junctions are being actively investigated as they offer the possibility to modulate the junction current by independently controlling the switching of the magnetization of the electrodes and of the ferroelectric polarization of the barrier. In this Letter, we show that the spin reconstruction at the interfaces of a La_0.7Sr_0.3MnO_3/BaTiO_3/La_0.7Sr_0.3MnO_3 multiferroic tunnel junction is the origin of a spin filtering functionality that can be turned on and off by reversing the ferroelectric polarization. The ferroelectrically controlled interface spin filter enables a giant electrical modulation of the tunneling magnetoresistance between values of 10% and 1000%, which could inspire device concepts in oxides-based low dissipation spintronics.
publishDate 2019
dc.date.none.fl_str_mv 2019
2019-01-22
2019
2019-01-22
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/13143
url https://hdl.handle.net/20.500.14352/13143
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv American Physical Society
publisher.none.fl_str_mv American Physical Society
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,298079

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