Impact of La Concentration on Ferroelectricity of La-Doped HfO2 Epitaxial Thin Films
Epitaxial thin films of HfO2 doped with La have been grown on SrTiO3(001) and Si(001), and the impact of the La concentration on the stabilization of the ferroelectric phase has been determined. Films with 2-5 at. % La doping present the least amount of paraelectric monoclinic and cubic phases and e...
| Autores: | , , , , , |
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| Formato: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2021 |
| País: | España |
| Recursos: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/264649 |
| Acesso em linha: | http://hdl.handle.net/10261/264649 https://api.elsevier.com/content/abstract/scopus_id/85118626497 |
| Access Level: | acceso abierto |
| Palavra-chave: | Epitaxial HfO 2 Epitaxial oxides on silicon Ferroelectric HfO 2 Ferroelectric oxides Thin films |
| Resumo: | Epitaxial thin films of HfO2 doped with La have been grown on SrTiO3(001) and Si(001), and the impact of the La concentration on the stabilization of the ferroelectric phase has been determined. Films with 2-5 at. % La doping present the least amount of paraelectric monoclinic and cubic phases and exhibit the highest polarization, having a remanent polarization above 20 μC/cm2. The dopant concentration results in an important effect on the coercive field, which is reduced with increasing La content. Combined high polarization, high retention, and high endurance of at least 1010 cycles is obtained in 5 at. % La-doped films. |
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