A General and Predictive Understanding of Thermal Transport from 1D- and 2D-Confined Nanostructures

Heat management is crucial in the design of nanoscale devices as the operating temperature determines their efficiency and lifetime. Past experimental and theoretical works exploring nanoscale heat transport in semiconductors addressed known deviations from Fourier's law modeling by including e...

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Detalles Bibliográficos
Autores: Beardo, Albert|||0000-0003-1889-1588, Knobloch, Joshua L.|||0000-0002-4086-3746, Sendra Molins, Lluc|||0000-0001-8821-6831, Bafaluy, Javier|||0000-0003-1972-9339, Frazer, Travis D.|||0000-0002-5162-4230, Chao, Weilun|||0000-0002-9752-370X, Hernandez-Charpak, Jorge N., Kapteyn, Henry C.|||0000-0001-8386-6317, Abad Mayor, Begoña|||0000-0001-7589-7973, Murnane, Margaret M., Alvarez, F. Xavier|||0000-0001-6746-2144, Camacho, Juan|||0000-0002-8095-4167
Tipo de recurso: artículo
Fecha de publicación:2021
País:España
Institución:Universitat Autònoma de Barcelona
Repositorio:Dipòsit Digital de Documents de la UAB
Idioma:inglés
OAI Identifier:oai:ddd.uab.cat:250442
Acceso en línea:https://ddd.uab.cat/record/250442
https://dx.doi.org/urn:doi:10.1021/acsnano.1c01946
Access Level:acceso abierto
Palabra clave:Phonon hydrodynamics
Non-fourier heat transport
Silicon
High-order harmonic generation
Pump-probe spectroscopy
Descripción
Sumario:Heat management is crucial in the design of nanoscale devices as the operating temperature determines their efficiency and lifetime. Past experimental and theoretical works exploring nanoscale heat transport in semiconductors addressed known deviations from Fourier's law modeling by including effective parameters, such as a size-dependent thermal conductivity. However, recent experiments have qualitatively shown behavior that cannot be modeled in this way. Here, we combine advanced experiment and theory to show that the cooling of 1D- and 2D-confined nanoscale hot spots on silicon can be described using a general hydrodynamic heat transport model, contrary to previous understanding of heat flow in bulk silicon. We use a comprehensive set of extreme ultraviolet scatterometry measurements of nondiffusive transport from transiently heated nanolines and nanodots to validate and generalize our ab initio model, that does not need any geometry-dependent fitting parameters. This allows us to uncover the existence of two distinct time scales and heat transport mechanisms: an interface resistance regime that dominates on short time scales and a hydrodynamic-like phonon transport regime that dominates on longer time scales. Moreover, our model can predict the full thermomechanical response on nanometer length scales and picosecond time scales for arbitrary geometries, providing an advanced practical tool for thermal management of nanoscale technologies. Furthermore, we derive analytical expressions for the transport time scales, valid for a subset of geometries, supplying a route for optimizing heat dissipation.