Sorption of 4He, H2, Ne, N2, CH4 and Kr impurities in graphene oxide at low temperatures. Quantum effects
Sorption and the subsequent desorption of 4He, H2, Ne, N2, CH4, and Kr gas impurities by graphene oxide(GO), glucose-reduced GO (RGO-Gl) and hydrazine-reduced GO (RGO-Hz) powders have been investigated in the temperature interval 2¿290 K. It has been found that the sorptive capacity of the reduced s...
| Autores: | , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2013 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/89558 |
| Acceso en línea: | http://hdl.handle.net/10261/89558 |
| Access Level: | acceso abierto |
| Palabra clave: | Graphene oxide Glucose-reduced graphene oxide Hydrazine-reduced graphene oxide Gas impurities |
| Sumario: | Sorption and the subsequent desorption of 4He, H2, Ne, N2, CH4, and Kr gas impurities by graphene oxide(GO), glucose-reduced GO (RGO-Gl) and hydrazine-reduced GO (RGO-Hz) powders have been investigated in the temperature interval 2¿290 K. It has been found that the sorptive capacity of the reduced sample RGO-Hz is three to six times higher than that of GO. The reduction of GO with glucose has only a slight effect on its sorptive properties. The temperature dependences of the diffusion coefficients of the GO, RGO-Gl and RGO-Hz samples have been obtained using the measured characteristic times of sorption. It is assumed that the tempera-ture dependences of the diffusion coefficients are determined by the competition of the thermally activated and tunneling mechanisms, the tunneling contribution being dominant at low temperatures. |
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